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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2017-12-19
09:40		 Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82		 We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
ED 2016-12-19
14:40		 Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81		 We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2016-01-20
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118		 High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] ED2015-118
pp.37-41
ED 2013-12-16
13:55		 Miyagi Research Institute of Electrical Communication Tohoku University Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92		 To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] ED2013-92
pp.13-17
ED, SDM, CPM 2012-05-18
09:00		 Aichi VBL, Toyohashi Univ. of Technol. High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28		 We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] ED2012-26 CPM2012-10 SDM2012-28
pp.43-48
ED 2011-12-14
13:40		 Miyagi Tohoku University Monte Carlo Simulations of InGaAs/InAs/InGaAs Composite Channel HEMTs -- Band Structure of Strained InAs and Self-Consistent Analysis of 2DEG --
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2011-101		 To achieve high-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is usedas a channel. In t... [more] ED2011-101
pp.7-12
ED 2010-12-17
11:15		 Miyagi Tohoku University (Research Institute of Electrical Communication) Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2010-168		 To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a ch... [more] ED2010-168
pp.59-64
ICD, SDM 2010-08-27
16:00		 Hokkaido Sapporo Center for Gender Equality Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65		 It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] SDM2010-150 ICD2010-65
pp.143-148
MW 2005-12-16
13:35		 Hiroshima   A Dual-Band GaAs FET Oscillator with Common-Drain Configuration
Kenichi Ono, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo) 		Dual-band configuration and design method for oscillator using GaAs FET with common-drain configuration are proposed. On... [more] MW2005-136
pp.49-54
MW, ED 2005-01-18
14:25		 Tokyo   -
-, -, -, - (OKI) 		The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] ED2004-221 MW2004-228
pp.53-58
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