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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 16:40 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Control and application of contactless photoelectrochemical (CL-PEC) etching for AlGaN/GaN heterostructures Yugo Oki, Naoki Shiozawa, Takuya Togashi, Taketomo Sato (Hokkaido Univ.)  ED2024-11 CPM2024-11 SDM2024-18 |
The association of control parameters with etching depth and morphology was investigated for contactless photoelectroche... [more] | ED2024-11 CPM2024-11 SDM2024-18 pp.37-40 |
| CPM, ED, SDM | 2023-05-19 16:30 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24 |
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] | ED2023-7 CPM2023-7 SDM2023-24 pp.28-31 |
| SDM, ED, CPM | 2022-05-27 16:15 |
Online | Online | Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials Taketomo Sato, Masachika Toguchi (Hokkaido Univ.) ED2022-13 CPM2022-7 SDM2022-20 |
A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive i... [more] | ED2022-13 CPM2022-7 SDM2022-20 pp.25-28 |
| ED, CPM, LQE | 2021-11-26 16:25 |
Online | Online | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] | ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| LQE, CPM, ED | 2017-11-30 15:50 |
Aichi | Nagoya Inst. tech. | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] | ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
| CPM, LQE, ED | 2016-12-12 17:00 |
Kyoto | Kyoto University | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] | ED2016-66 CPM2016-99 LQE2016-82 pp.45-50 |
| SDM, EID | 2016-12-12 14:45 |
Nara | NAIST | Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103 |
In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes suppl... [more] | EID2016-22 SDM2016-103 pp.59-62 |
| CPM, LQE, ED | 2013-11-29 16:15 |
Osaka | Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-88 CPM2013-147 LQE2013-123 |
Optical properties of GaN porous structures formed by the electrochemical process were investigated. We conducted the ph... [more] | ED2013-88 CPM2013-147 LQE2013-123 pp.113-116 |
|
| SDM | 2009-10-30 14:45 |
Miyagi | Tohoku University | Electrochemical Etching Processes of Semiconductors Kingo Itaya, Shinichirou Kobayashi, Rui Wen, Taketoshi Minato (Tohoku Univ.) SDM2009-132 |
Electrochemical etching processes of semiconductors have been investigated with atomic levels. Using electrochemical met... [more] | SDM2009-132 pp.69-73 |
| SDM, ED | 2008-07-11 15:35 |
Hokkaido | Kaderu２・７ | Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127 |
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers．However it ... [more] | ED2008-108 SDM2008-127 pp.357-361 |
| CPM, ED, SDM | 2008-05-16 14:40 |
Aichi | Nagoya Institute of Technology | Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers．However it is reported... [more] | ED2008-19 CPM2008-27 SDM2008-39 pp.89-94 |
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