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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE | 2010-12-17 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3μm 25.8Gbps direct modulation of BH AlGaInAs DFB lasers for low driving current Go Sakaino, Toru Takiguchi, Yohei Hokama, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa, Eitaro Ishimura, Akihiro Shima (Mitsubishi Electric Corp. HOW)  LQE2010-119 |
1.3µm-band BH AlGaInAs short cavity DFB lasers are fabricated with p-InP substrate for 100GbE (25Gbps x 4 waveleng... [more] | LQE2010-119 pp.23-26 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 16:00 |
Kyoto | 1.3μm-25/43Gbps EML with tensile-strained asymmetric QW absorption layer Takeshi Saito, Takeshi Yamatoya, Yoshimichi Morita, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2009-44 OPE2009-182 LQE2009-164 |
We demonstrate 1.3µm-25 / 43Gbps EML with novel tensile-strained asymmetric quantum well absorption layer. Clear ey... [more] | PN2009-44 OPE2009-182 LQE2009-164 pp.53-56 |
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| ED | 2009-11-29 14:50 |
Osaka | Osaka Science & Technology Center | A Low Phase Noise 77 GHz MMIC VCO With Optimized Fundamental and Harmonic Terminated Impedances Shinsuke Watanabe, Takayuki Matsuzuka, Hirotaka Amasuga, Yoshihiro Tsukahara, Seiki Goto, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2009-162 |
This paper describes a 77 GHz MMIC VCO with optimized fundamental and harmonic terminated impedances. To achieve a low ... [more] |
ED2009-162 pp.13-18 |
| OPE, LQE, OCS | 2009-10-23 17:20 |
Fukuoka | The development of 25Gbps pin-PD for 100Gbps Ethernet Ryota Takemura, Masaharu Nakaji, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi electric) OCS2009-81 OPE2009-147 LQE2009-106 |
We fabricated a surface-illuminated pin-PD for 100Gbps Ethernet. This pin-PD with a 15$\mu$m-diameter has a 3dB bandwidt... [more] | OCS2009-81 OPE2009-147 LQE2009-106 pp.197-200 |
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| OPE, EMT, MW | 2009-07-30 13:25 |
Hokkaido | Asahikawa Civic Culture Hall | High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which r... [more] | MW2009-35 OPE2009-35 pp.31-34 |
| ED | 2008-12-19 15:30 |
Miyagi | Tohoku Univ. | 60GHz High Isolation SPDT MMIC Switches. Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2008-188 |
This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In... [more] | ED2008-188 pp.21-25 |
| OCS, LQE, OPE | 2008-10-23 09:25 |
Fukuoka | Kyushu Univ. | High-current InGaAs pin-PD for Microwave output Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60 |
For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP la... [more] | OCS2008-48 OPE2008-91 LQE2008-60 pp.7-10 |
| LQE, CPM, EMD, OPE | 2008-08-29 10:55 |
Miyagi | Touhoku Univ. | The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] | EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
| MW | 2008-08-29 14:00 |
Osaka | Osaka-Univ. (Toyonaka) | A W-Band Second Harmonic Oscillator with Optimized Harmonic Load Takayuki Matsuzuka, Shinsuke Watanabe, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa, Masatoshi Nakayama, Naohito Yoshida (Mitsubishi Electric Corp.) MW2008-98 |
A W-band second harmonic InGaP HBT oscillator with optimized second harmonic loads is presented. To enhance output power... [more] | MW2008-98 pp.107-112 |
| ED | 2007-11-27 16:05 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | A Ka-Band Second Harmonic Oscillator with Optimized Harmonic Load Shinsuke Watanabe, Takayuki Matsuzuka, Hirotaka Amasuga, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2007-192 |
A Ka-Band second harmonic oscillator with the optimized harmonic load is presented. To enhance the output power withou... [more] |
ED2007-192 pp.29-32 |
| LQE, OPE, OCS | 2007-11-01 10:50 |
Fukuoka | Highly reliable guardring-free planar InAlAs avalanche photodiode Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84 |
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] | OCS2007-43 OPE2007-98 LQE2007-84 pp.19-22 |
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| ED | 2007-06-15 13:25 |
Toyama | Toyama Univ. | A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) ED2007-32 |
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave am... [more] | ED2007-32 pp.7-11 |
| OPE, EMT, LQE, PN | 2007-01-29 13:50 |
Osaka | Osaka Univ. Convention Center | Waveguide photodiode for 40Gbps optical comunication Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2006-55 OPE2006-137 LQE2006-126 |
[more] | PN2006-55 OPE2006-137 LQE2006-126 pp.45-48 |
| MW, ED | 2007-01-19 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The f... [more] | ED2006-228 MW2006-181 pp.155-160 |
| MW, ED | 2007-01-19 11:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi) |
A millimeter wave high power PHEMT modelwith a nonlinear drain resistance Rd is proposed. The non-linear Rd arises from ... [more] | ED2006-229 MW2006-182 pp.161-166 |
| MW, ED | 2005-11-17 14:00 |
Saga | A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] | ED2005-166 MW2005-121 pp.45-49 |
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