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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-12-01
09:55
Shizuoka   Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate
Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] ED2023-25 CPM2023-67 LQE2023-65
pp.52-55
CPM, ED, LQE 2022-11-25
10:35
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
[Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] ED2022-40 CPM2022-65 LQE2022-73
pp.73-76
SDM 2022-11-11
11:30
Online Online Modeling of Super Steep Subthreshold Slope "PN Body Tied SOI-FET" by using Neural Network
Nakata Kengo, Mori Takayuki, Ida Jiro (Kanazawa Inst. of Tech.) SDM2022-73
In this study, we examined how PN-Body Tied (PNBT) Silicon On Insulator (SOI)-FETs, a novel device structure with steep ... [more] SDM2022-73
pp.44-48
COMP 2021-12-03
11:40
Ishikawa Kanazawa Chamber of Commerce and Industry
(Primary: On-site, Secondary: Online)
[Short Paper] A recommendation algorithm based on data polish
Shu Kumanogo, Mitsuo Motoki (Kanazawa Inst. of Tech.) COMP2021-24
Data polish is a methodology to reduce the number of similar maximal cliques in a given network by adding edges between ... [more] COMP2021-24
pp.19-22
ED, CPM, LQE 2021-11-25
13:30
Online Online Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] ED2021-20 CPM2021-54 LQE2021-32
pp.29-32
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2018-01-26
09:30
Shizuoka Shizuoka Univ., Hamamatsu Evaluation of photoluminescence and photoacoustic characteristics in Bi-activated oxide phosphors
Kosuke Sakuma, Yuta Shimooki, Yuki Yoshimoto, Shota Yokka, Haruki Fukada, Athushi A Yamaguchi (Kanazawa Inst. of Tech.) EID2017-40
(To be available after the conference date) [more] EID2017-40
pp.61-64
LQE, CPM, ED 2017-11-30
13:35
Aichi Nagoya Inst. tech. A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy
Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-49 CPM2017-92 LQE2017-62
 [more] ED2017-49 CPM2017-92 LQE2017-62
pp.1-6
LQE, CPM, ED 2017-11-30
14:00
Aichi Nagoya Inst. tech. Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs
Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63
Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the elect... [more] ED2017-50 CPM2017-93 LQE2017-63
pp.7-10
AP 2017-08-24
13:25
Hokkaido National Institute of Technology, Hakodate College Dual Band MACKEY-E with E Shaped Radiator
Ken Hirano, Shigeru Makino, Keisuke Noguchi, Kenji Itoh, Tetsuo Hirota (Kanazawa Inst. of Tech.) AP2017-74
In this paper, a dual-band MACKEY device, in which the E shape radiator, is proposed. Additionally the conditions for co... [more] AP2017-74
pp.35-39
MW 2017-06-22
16:00
Aichi A-101, Wing-A, Toyohashi University of Technology [Invited Talk] Frequency conversion techniques by using switching devices
Kenji Itoh (Kanazawa Inst. of Tech.) MW2017-25
In this report, frequency conversion techniques by using switching devices are describes as the simple summary of the au... [more] MW2017-25
pp.19-24
MW
(2nd)
2015-08-06
- 2015-08-08
Overseas Chulalongkorn Univ., Bangkok, Thailand Basic characteristics of the third order PLL oscillator
Junki Ogawa, Kenji Itoh, Keisuke Noguchi, Tetsuo Hirota, Shigeru Makino (Kanazawa Inst. of Tech.)
 [more]
 Results 1 - 11 of 11  /   
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