Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, THz |
2021-12-21 10:20 |
Miyagi |
(Primary: On-site, Secondary: Online) |
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57 |
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] |
ED2021-57 pp.44-47 |
ED, THz [detail] |
2019-12-23 16:45 |
Miyagi |
|
GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] |
ED2019-83 pp.29-32 |
ED, THz |
2018-12-18 09:00 |
Miyagi |
RIEC, Tohoku Univ. |
[Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] |
ED2018-62 pp.35-38 |
ED, THz |
2017-12-19 09:00 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81 |
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] |
ED2017-81 pp.33-36 |
ED, THz |
2017-12-19 09:40 |
Miyagi |
RIEC, Tohoku Univ |
Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] |
ED2017-82 pp.37-40 |
ED |
2016-12-19 14:40 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] |
ED2016-81 pp.7-12 |
ED |
2015-12-21 13:45 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] |
ED2015-92 pp.7-11 |
ED |
2014-12-22 14:35 |
Miyagi |
|
Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101 |
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] |
ED2014-101 pp.15-19 |
ED |
2014-12-22 15:00 |
Miyagi |
|
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] |
ED2014-102 pp.21-26 |
ED |
2014-08-01 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 |
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] |
ED2014-55 pp.13-18 |
ED |
2013-12-16 13:55 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92 |
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] |
ED2013-92 pp.13-17 |
RCS, SAT (Joint) |
2013-08-29 14:40 |
Nagano |
Shinshu Univ. |
A field trial towards possible implementation of onboard-vessel mobile base station for disaster recovery Naoki Fuke, Norio Takahashi, Kazuhiro Ikeno, Akira Endou, Ryo Takahashi, Yasuhiro Terao, Shinji Yamasaki (KDDI) SAT2013-24 |
In the aftermath of the Great East Japan Earthquake, a huge number of mobile base stations were widely damaged, resultin... [more] |
SAT2013-24 pp.17-22 |
ED |
2012-12-17 13:00 |
Miyagi |
Tohoku University |
DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] |
ED2012-93 pp.1-6 |
ED |
2012-07-27 09:30 |
Fukui |
Fukui University |
Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) ED2012-48 |
The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are
analyzed... [more] |
ED2012-48 pp.37-42 |
ED |
2011-12-14 13:40 |
Miyagi |
Tohoku University |
Monte Carlo Simulations of InGaAs/InAs/InGaAs Composite Channel HEMTs
-- Band Structure of Strained InAs and Self-Consistent Analysis of 2DEG -- Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2011-101 |
To achieve high-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is usedas a channel. In t... [more] |
ED2011-101 pp.7-12 |
ED |
2010-12-17 11:15 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2010-168 |
To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a ch... [more] |
ED2010-168 pp.59-64 |
SDM |
2010-11-12 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku) SDM2010-178 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] |
SDM2010-178 pp.41-43 |
SDM |
2010-10-22 09:30 |
Miyagi |
Tohoku University |
Study on Electron Transfer in Light-Emitting Polymer/Cathode Interface by Luminescence Computational Chemistry Itaru Yamashita, Hiroaki Onuma, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-159 |
[more] |
SDM2010-159 pp.35-36 |
SDM |
2010-10-22 10:00 |
Miyagi |
Tohoku University |
Emission Property Prediction of Eu2+-doped Phosphors from Crystal Structures: Material Informatics Study Hiroaki Onuma, Daiki Yoshihara, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-160 |
[more] |
SDM2010-160 pp.37-38 |
SDM |
2010-10-22 10:30 |
Miyagi |
Tohoku University |
Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-161 |
Quantum dot solar cells are expected as high-efficiency solar cells. However, reported efficiencies are lower than the h... [more] |
SDM2010-161 pp.39-40 |
|