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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-01-31 13:05 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.)  SDM2023-75 |
Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] | SDM2023-75 pp.5-8 |
| CPM, LQE, ED | 2016-12-12 13:50 |
Kyoto | Kyoto University | Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-59 CPM2016-92 LQE2016-75 |
[more] | ED2016-59 CPM2016-92 LQE2016-75 pp.9-14 |
| CPM, LQE, ED | 2016-12-12 14:40 |
Kyoto | Kyoto University | Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77 |
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] | ED2016-61 CPM2016-94 LQE2016-77 pp.21-26 |
| EID, SDM | 2015-12-14 13:30 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Unseeded Growth of Poly Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Yoshiaki Nieda, Toru Takao (Nara Inst. of Sci.& Technol.), Masahiro Horita (Kyoto Univ.), Nobuo Sasaki (Japan women's Univ.), Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Sci.& Technol.) |
[more] | |
| ED, LQE, CPM | 2015-11-26 13:10 |
Osaka | Osaka City University Media Center | Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104 |
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] | ED2015-72 CPM2015-107 LQE2015-104 pp.21-25 |
| ED, LQE, CPM | 2015-11-26 13:35 |
Osaka | Osaka City University Media Center | Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105 |
[more] | ED2015-73 CPM2015-108 LQE2015-105 pp.27-32 |
| ED, LQE, CPM | 2015-11-26 14:00 |
Osaka | Osaka City University Media Center | Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106 |
[more] | ED2015-74 CPM2015-109 LQE2015-106 pp.33-37 |
| SDM, EID | 2014-12-12 14:15 |
Kyoto | Kyoto University | Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] | EID2014-26 SDM2014-121 pp.67-71 |
| SDM, EID | 2014-12-12 17:00 |
Kyoto | Kyoto University | Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-36 SDM2014-131 |
In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power ... [more] | EID2014-36 SDM2014-131 pp.119-123 |
| SDM | 2013-12-13 09:00 |
Nara | NAIST | Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116 |
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] | SDM2013-116 pp.1-5 |
| SDM | 2013-12-13 09:20 |
Nara | NAIST | Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-117 |
In this paper, we investigated the effect of high pressure water vapor annealing (HPWVA) as a post deposition annealing ... [more] | SDM2013-117 pp.7-11 |
| SDM | 2011-12-16 10:00 |
Nara | NAIST | Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-132 |
ZnS-based inorganic EL has been widely studied for next generation display and illumination. In the inorganic EL devices... [more] | SDM2011-132 pp.1-5 |
| SDM | 2011-12-16 14:00 |
Nara | NAIST | Fabrication of 2D Photonic-Crystal by ZnO using Gel-Nanoimprint Process Min Zhang, Shinji Araki, Li Lu, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-140 |
In this research, 2D-photonic-crystal ZnO films were fabricated using sol-gel spin-coating and nanoimprint lithography (... [more] | SDM2011-140 pp.43-46 |
| SDM | 2011-07-04 16:40 |
Aichi | VBL, Nagoya Univ. | Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 |
We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green l... [more] | SDM2011-68 pp.103-108 |
| EID, ITE-IDY, IEE-EDD, IEIJ-SSL | 2011-01-28 14:15 |
Kochi | Kochi University of Technology | Preparation of ZnS Inorganic EL Phosphor by Infrared Rapid Thermal Annealing Shogo Horiguchi, Takuya Kontani, Masahiro Horita (NAIST), Nobuyoshi Taguchi (ITI), Yukiharu Uraoka (NAIST/CREST) EID2010-29 |
ZnS-based inorganic Electro Luminescence(EL) has been widely studied for next generation display and illumination. We ha... [more] | EID2010-29 pp.33-36 |
| SDM | 2010-12-17 11:00 |
Kyoto | Kyoto Univ. (Katsura) | Improvement of Luminescence Property of ZnS Inorganic EL by Atomization Treatment of Phosphor Shogo Horiguchi, Takuya Kontani, Masahiro Horita (NAIST), Nobuyoshi Taguchi (ITI), Yukiharu Uraoka (NAIST/CREST) SDM2010-188 |
ZnS-based inorganic Electro Luminescence(EL) has been widely studied for next generation display and illumination. Unifo... [more] | SDM2010-188 pp.19-23 |
| SDM | 2010-12-17 16:25 |
Kyoto | Kyoto Univ. (Katsura) | Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back. Masahiro Matsue, Kazunori Ichikawa, Hiroshi Akamatsu (KCCT), Koji Yamasaki, Masahiro Horita, Yukiharu Uraoka (NAIST) SDM2010-200 |
We have reported that the stacked a-Si layers were simultaneous crystallized by the green laser irradiation. In this stu... [more] | SDM2010-200 pp.83-86 |
| SDM | 2010-12-17 17:25 |
Kyoto | Kyoto Univ. (Katsura) | Effect of high pressure vapor anneal treatment on the a-In2Ga2Zn1O7 TFTs characteristics Tomoki Maruyama, Mami Fujii (NAIST), Masashi Kasami, Koki Yano (Idemitsu Kosan), Masahiro Horita, Yasuaki Ishikawa (NAIST), Yukiharu Uraoka (NAIST/JST-CREST) SDM2010-203 |
Amorphous oxide semiconductor(a-IGZO) is useful materials to realize transparent flexible Thin Film Transistor (TFT). Po... [more] | SDM2010-203 pp.99-102 |
| SDM | 2009-12-04 09:20 |
Nara | NAIST | Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering Yusuke Kobayashi (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Masami Susaki (Osaka Pref. College of Technology), Masahiro Horita (NAIST), Yukiharu Uraoka (NAIST/CREST) SDM2009-151 |
The optical properties of ZnS-based phosphor sintered by Microwave were investigated in this paper. We sintered ZnS powd... [more] | SDM2009-151 pp.1-4 |
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