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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2023-04-11 16:05 |
Kanagawa | (Kanagawa, Online) (Primary: On-site, Secondary: Online) |
[Keynote Address]
Game Change by Spintronics Low Power semiconductors and its contribution to a carbon-neutral society
-- from STT/SOT-MRAM to its application to IoT/AI processors -- Tetsuo Endoh (Tohoku Univ.)  ICD2023-13 |
[more] | ICD2023-13 p.30 |
| SDM | 2019-01-29 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process Hideo Sato, Tetsuo Endoh (Tohoku Univ.) |
[more] | |
| ICD | 2016-04-14 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Tosinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ICD2016-10 |
A device-variation-tolerant spin-transfer-torque magnetic random access memory (STT-MRAM) cell array with a high-signal-... [more] | ICD2016-10 pp.51-56 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. (Aichi) | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| ICD | 2015-04-17 13:55 |
Nagano | (Nagano) | [Tutorial Lecture]
Nonvolatile Logic-in-Memory Architecture and Its Applications to Low-Power VLSI System Takahiro Hanyu, Daisuke Suzuki, Akira Mochizuki, Masanori Natsui, Naoya Onizawa (Tohoku Univ.), Tadahiko Sugibayashi (NEC), Shoji Ikeda, Tetsuo Endoh, Hideo Ohno (Tohoku Univ.) ICD2015-12 |
[more] | ICD2015-12 pp.57-61 |
| ICD, SDM | 2014-08-04 14:55 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. (Hokkaido) | [Invited Talk]
A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara (NEC), Keizo Kinoshita, Shunsuke Fukami (Tohoku Univ.), Sadahiko Miura (NEC), Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.), Tadahiko Sugibayashi (NEC) SDM2014-69 ICD2014-38 |
[more] | SDM2014-69 ICD2014-38 pp.39-44 |
| SDM | 2014-06-19 14:05 |
Aichi | VBL, Nagoya Univ. (Aichi) | Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] | SDM2014-53 pp.55-58 |
| ICD | 2014-04-17 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
A 1Mb STT-MRAM for Nonvolatile Embedded Memories performing 1.5ns/2.1ns Random Read/Write Cycle Time
-- Background Write (BGW) Scheme applied to a 6T2MTJ Memory Cell -- Takashi Ohsawa, Hiroki Koike (Tohoku Univ.), Sadahiko Miura (NEC), Keizo Kinoshita (Tohoku Univ.), Hiroaki Honjo (NEC), Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ICD2014-7 |
[more] | ICD2014-7 pp.33-38 |
| ICD | 2014-04-17 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine Shoun Matsunaga (Tohoku Univ.), Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi (NEC), Masanori Natsui, Akira Mochizuki, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2014-8 |
We demonstrate a 1-Mb nonvolatile TCAM-based search engine using 90-nm CMOS and perpendicular MTJ technologies for an ul... [more] | ICD2014-8 pp.39-44 |
| ICD | 2014-04-18 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop Hiroki Koike (Tohoku Univ.), Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Sadahiko Miura, Hiroaki Honjo, Tadahiko Sugibayashi (NEC), Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ICD2014-17 |
We propose a novel power-gated microprocessor unit (MPU) using a nonvolatile flip-flop (NV-F/F) with magnetic tunnel jun... [more] | ICD2014-17 pp.85-90 |
| ICD | 2013-04-11 13:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) (Ibaraki) | [Invited Talk]
Restructuring of Memory Hierarchy in Computing System with Spintronics-Based Technologies Tetsuo Endoh (Tohoku Univ.) ICD2013-5 |
In the memory hierarchy of current computer systems, the trade-off between their performance and power consumption is be... [more] | ICD2013-5 pp.21-26 |
| ICD | 2013-04-11 14:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) (Ibaraki) | [Invited Lecture]
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique
-- Achieves 1.0ns/200ps Wake-Up/Power-Off Times -- Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome (NEC), Shoji Ikeda, Takahiro Hanyu, Hideo Ohno (Tohoku Univ.) ICD2013-6 |
A 1Mb embedded memory was designed and fabricated using a cell consisting of four NFETs and two spin-transfer torque mag... [more] | ICD2013-6 pp.27-32 |
| ICD | 2013-04-11 14:45 |
Ibaraki | Advanced Industrial Science and Technology (AIST) (Ibaraki) | [Invited Lecture]
Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2013-7 |
Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge num... [more] | ICD2013-7 pp.33-38 |
| ICD | 2013-04-11 16:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) (Ibaraki) | Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9 |
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] | ICD2013-9 pp.41-46 |
| ICD | 2013-04-11 17:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) (Ibaraki) | [Panel Discussion]
Future prospects of memory solutions for smart society
-- Can new nonvolatile memories replace SRAM/DRAM/Flash? -- Koji Nii (Renesas Erctronics), Tetsuo Endoh (Tohoku Univ.), Yoshikazu Katoh (Panasonic), Satoru Hanzawa (Hitachi), Kazuhiko Kajigaya (Elpida Memory), Atsushi Kawasumi (Toshiba), Toru Miwa (SanDisk) ICD2013-11 |
(To be available after the conference date) [more] | ICD2013-11 p.53 |
| SDM, ED (Workshop) |
2012-06-27 13:30 |
Okinawa | Okinawa Seinen-kaikan (Okinawa) | The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) |
In this paper, we show the asymmetric I-V characteristics induced by the tapered silicon pillar of the Vertical MOSFET a... [more] | |
| SDM, ED (Workshop) |
2012-06-27 13:45 |
Okinawa | Okinawa Seinen-kaikan (Okinawa) | A High Performance SRAM Sense Amplifier with Vertical MOSFET Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) |
In this paper, a high performance SRAM sense amplifier with vertical MOSFET is proposed, and its performances are invest... [more] | |
| ICD | 2012-04-24 10:50 |
Iwate | Seion-so, Tsunagi Hot Spring (Iwate) (Iwate) | A Non-Volatile Content Addressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji (NEC), Shunsuke Fukami (Tohoku Univ.), Hiroaki Honjo, Shinsaku Saito, Sadahiko Miura, Nobuyuki Ishiwata (NEC), Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2012-10 |
A 5-ns search operation of a non-volatile content addressable memory was demonstrated. The CAM macro, with a capacity of... [more] | ICD2012-10 pp.49-54 |
| CPM | 2010-10-29 10:25 |
Nagano | (Nagano) | Optimization of GaN film growth condition using pulse-mode hot-mesh CVD Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102 |
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] | CPM2010-102 pp.55-58 |
| ED, SDM | 2010-07-02 12:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus (Tokyo) | The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) ED2010-92 SDM2010-93 |
As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials h... [more] | ED2010-92 SDM2010-93 pp.177-182 |
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