Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, OME |
2020-04-13 14:00 |
Okinawa |
Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus) |
We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films with smooth surface. ... [more] |
|
MRIS, ITE-MMS, IEE-MAG |
2019-10-18 14:15 |
Fukuoka |
Kyushu University (Nishijin Plaza) |
Study on electrode formation for spin injection into singlecrystalline diamond Eslam Abubakr, Takuya Sakai, Abdelrahman Zkria (KU), Yuki Katamune (KIT), Shinya Ohmagari (AIST), Kaname Imokawa, Hiroshi Ikenoue (KU), Ken-ichiro Sakai (Kurume Coll), Tsuyoshi Yoshitake (KU) MRIS2019-37 |
Singlecrystalline diamond is a candidate as long-distance spin transport materials. Since diamond possesses a wide bandg... [more] |
MRIS2019-37 pp.119-122 |
SDM |
2018-10-17 15:20 |
Miyagi |
Niche, Tohoku Univ. |
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] |
SDM2018-54 pp.11-14 |
SDM, EID |
2014-12-12 11:30 |
Kyoto |
Kyoto University |
Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST) EID2014-19 SDM2014-114 |
In case of the laser process with BSG (Boron Silicate Glass) as the doping precursor, we have the problem about the amou... [more] |
EID2014-19 SDM2014-114 pp.31-35 |
EMD, LQE, OPE, CPM, R |
2014-08-21 16:00 |
Hokkaido |
Otaru Economy Center |
Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding Katsuaki Tanabe, Yasuhiko Arakawa (Univ. of Tokyo) R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 |
We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of... [more] |
R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 pp.51-54 |
SDM |
2013-12-13 10:40 |
Nara |
NAIST |
Fabrication of n-type Silicon Solar Cells by boron doping method using laser process Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST) SDM2013-121 |
To fabricate the n-type solar cells by boron doping with conventional diffusion process is difficult because of low diff... [more] |
SDM2013-121 pp.31-35 |
SDM |
2013-12-13 11:00 |
Nara |
NAIST |
Fabrication of Single-Crystalline Silicon Solar Cells by Laser Doping using Phosphorus-Doped Silicon Nano Ink Takanori Okamura, Hideki Nishimura, Takashi Fuyuki (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin) SDM2013-122 |
Localized doping and depth controllability are necessary for fabricating high efficiency silicon solar cell structures s... [more] |
SDM2013-122 pp.37-41 |
SDM |
2012-12-07 14:30 |
Kyoto |
Kyoto Univ. (Katsura) |
Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST) SDM2012-129 |
The laser doping (LD) has many attention because it enable improvement of the cell efficiency and reduction of the cost ... [more] |
SDM2012-129 pp.83-87 |
SDM |
2012-12-07 15:15 |
Kyoto |
Kyoto Univ. (Katsura) |
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-131 |
Laser doping (LD) is a new process to produce a low-cost, high efficient crystalline silicon solar cells. Since LD can p... [more] |
SDM2012-131 pp.95-99 |
SDM, ICD |
2011-08-25 10:50 |
Toyama |
Toyama kenminkaikan |
Plasma Doping and Laser Spike Annealing Technique for Steep SDE Formation in nano-scale MOSFET Emiko Sugizaki, Toshitaka Miyata, Yasunori Oshima, Akira Hokazono, Kanna Adachi, Kiyotaka Miyano, Hideji Tsujii, Shigeru Kawanaka, Satoshi Inaba, Takaharu Itani, Toshihiko Iinuma, Yoshiaki Toyoshima (Toshiba) SDM2011-75 ICD2011-43 |
The importance of impurity profile design for Source/Drain Extension (SDE) is widely recognized for deeply scaled MOSFET... [more] |
SDM2011-75 ICD2011-43 pp.23-27 |
SDM |
2010-12-17 11:40 |
Kyoto |
Kyoto Univ. (Katsura) |
Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process Tomohiro Funatani, Kenji Hirata, Tamaki Takayama, Mitsuhiro Hasegawa, Takashi Fuyuki (NAIST) SDM2010-190 |
This paper presents influence of dopant precursor layer in Laser Doping (LD) for silicon solar cells. Recently,reducing ... [more] |
SDM2010-190 pp.29-32 |
OME |
2010-01-20 15:30 |
Aichi |
Meijo Univ. |
Wavelength tuning of LD-pumped surface-emitting solid-state dye lasers using thin film wedge Hidetaka Matsuura, Hajime Sakata, Masami Fukuda, Eiji Yamazaki (Shizuoka Univ) OME2009-82 |
We present wavelength tuning and threshold reduction of blue-violet LD-pumped vertical-cavity solid-state dye lasers. Th... [more] |
OME2009-82 pp.17-20 |
OME |
2007-11-09 12:30 |
Niigata |
Niigata Univ. |
Development of Photo-Assisted Polymerization Process for Fullerenes Hiroshi Yamamoto, Nobuyuki Iwata, Shingo Ando, Ryo Nokariya, Yasunari Iio (Nihon Univ.) OME2007-48 |
Highly condensed C60 polymers are expected to be super-functional materials which are ultra-light, super-hard like diamo... [more] |
OME2007-48 pp.1-5 |
OPE, LQE |
2006-06-30 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
1.3μm p-doped quantum dot lasers
-- low driving current temperature stable 10 Gb/s direct modulation between 20℃ and 90℃ -- Mitsuru Ishida, Nobuaki Hatori (The Univ. of Tokyo), Koji Otsubo, Tsuyoshi Yamamoto (Fujitsu and OITDA), Yoshiaki Nakata, Hiroji Ebe (The Univ. of Tokyo), Mitsuru Sugawara (Fujitsu and OITDA), Yasuhiko Arakawa (The Univ. of Tokyo) |
Various distinguishable characteristics of quantum dot lasers have been achieved recently. In this report, we realized d... [more] |
OPE2006-18 LQE2006-22 pp.15-20 |
LQE, OCS, OPE |
2004-11-05 13:30 |
Fukuoka |
Kyushu Institute of Technology |
Wide range tuning of fluoride-based Ce:Er-codoped fiber laser in 1.55 micron Nilesh Vasa, Satoshi Nagaoka, Tatsuo Okada (Kyushu Univ.) |
A spectrally narrowed, widely tunable Ce3+:Er3+-codoped fluorozirconate (ZBLAN) fiber laser with a continuous-wave laser... [more] |
OCS2004-101 OPE2004-166 LQE2004-110 pp.41-45 |