Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2007-82
Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations
Atsushi Yamaguchi (Kanazawa Inst. of Technology)
pp. 1 - 6
CPM2007-83
Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn
Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
pp. 7 - 12
CPM2007-84
Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy
Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
pp. 13 - 17
CPM2007-85
High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents
Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.)
pp. 19 - 23
CPM2007-86
Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure --
Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO)
pp. 25 - 28
CPM2007-87
340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN
Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN)
pp. 29 - 34
CPM2007-88
Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet.
Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony)
pp. 35 - 37
CPM2007-89
Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions
Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.)
pp. 39 - 42
CPM2007-90
UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)
pp. 43 - 46
CPM2007-91
Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs
Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui)
pp. 47 - 52
CPM2007-92
Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI)
pp. 53 - 56
CPM2007-93
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT
Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices)
pp. 57 - 61
CPM2007-94
Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers
Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 63 - 66
CPM2007-95
Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
pp. 67 - 72
CPM2007-96
Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.)
pp. 73 - 76
CPM2007-97
Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs
Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
pp. 77 - 80
CPM2007-98
Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
pp. 81 - 84
CPM2007-99
Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
pp. 85 - 88
CPM2007-100
Growth Condition of Blue Emitting InGaN Microcrystals
Hisashi Kanie, Kenichi Akashi (TUS)
pp. 89 - 92
CPM2007-101
Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices
Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST)
pp. 93 - 96
CPM2007-102
Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate
Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.)
pp. 97 - 102
CPM2007-103
Preparation of GaN Crystals by a Reaction of Ga with Li3N
Akira Mabuchi, Takayoshi Hirano, Takashi Sugiura, HIdekiMinoura (Gifu Univ)
pp. 103 - 107
CPM2007-104
Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN
Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.)
pp. 109 - 112
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.