Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ICD2008-1
[Invited Talk]
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with an Asymmetrical Unit β-ratio Memory Cell
Takahiko Sasaki, Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida (Toshiba Corp.), Akihito Tohata (Toshiba Microelectronics Corp.), Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka (Toshiba Corp.)
pp. 1 - 6
ICD2008-2
[Invited Talk]
65nm Low-Power High-Density SRAM Operable at 1.0V under 3sigma Systematic Variation Using Separate Vth Monitoring and Body Bias for NMOS and PMOS
Masanao Yamaoka (Hitachi, Ltd.), Noriaki Maeda, Yasuhisa Shimazaki (Renesas), Kenichi Osada (Hitachi, Ltd.)
pp. 7 - 12
ICD2008-3
[Invited Talk]
An 833MHz Pseudo Two-Port Embedded DRAM for Graphics Applications
Mariko Kaku, Hitoshi Iwai, Takeshi Nagai, Masaharu Wada, Atsushi Suzuki, Tomohisa Takai, Naoko Itoga, Takayuki Miyazaki, Takayuki Iwai (Toshiba), Hiroyuki Takenaka (Toshiba Microelectronics), Takehiko Hojo, Shinji Miyano, Nobuaki Otsuka (Toshiba)
pp. 13 - 18
ICD2008-4
[Invited Talk]
Embedded DRAM Technology for Consumer Electronics
Hiroki Shirai, Ryousuke Ishikawa, Yuichi Itoh, Takuya Kitamura, Mami Takeuchi, Takashi Sakoh, Ken Inoue, Tohru Kawasaki, Nobuyuki Katsuki, Hiroyuki Hoshizaki, Shinichi Kuwabara, Hidetaka Natsume, Masato Sakao, Takaho Tanigawa (NEC Electronics)
pp. 19 - 24
ICD2008-5
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Dai Nakamura, Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara (Toshiba), Toru Miwa, Yosuke Kato (Sandisk), Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le (Sandisk Corp.), Eiichi Makino, Takashi Taira (Toshiba)
pp. 25 - 30
ICD2008-6
[Invited Talk]
NAND Flash Memory and SSD
Ken Takeuchi (University of Tokyo)
pp. 31 - 36
ICD2008-7
[Panel Discussion]
Probing into the Potential of the Future Flash
-- An Impact of Flash Revolution --
Kazuhiko Kajigaya (Elpida), Naoharu Shinozaki (Spansion), Toshio Kakihara (HGST), Kazushige Kanda (Toshiba), Michio Kobayashi (Spansion), Makoto Saen (Hitachi), Tadahiko Sugibayashi (NEC), Ken Takeuchi (Tokyo Univ.), Hisao Tsukazawa (Toshiba)
pp. 37 - 38
ICD2008-8
A 65nm Pure CMOS One-time Programmable Memory Using a Two-Port Antifuse Cell Implemented in a Matrix Structure
Kensuke Matsufuji, Toshimasa Namekawa, Hiroaki Nakano, Hiroshi Ito, Osamu Wada, Nobuaki Otsuka (Toshiba)
pp. 39 - 44
ICD2008-9
[Invited Talk]
*
Shinji Kawai, Akira Hosogane, Shigehiro Kuge, Toshihiro Abe, Kohei Hashimoto, Tsukasa Oishi, Naoki Tsuji, Kiyohiko Sakakibara, Kenji Noguchi (Renesas)
pp. 45 - 50
ICD2008-10
[Invited Talk]
Current Status of Impact and Countermeasures in Environmental Neutron Induced Failures in Electric Systems
-- Evolution of Multi-Node Upset Issues --
Eishi Ibe (PERL)
pp. 51 - 56
ICD2008-11
[Invited Talk]
15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba)
pp. 57 - 62
ICD2008-12
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme
Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Hiroaki Honjo, Shinsaku Saito, Yuko Kato, Naoki Kasai (NEC)
pp. 63 - 68
ICD2008-13
A 250-MHz 1-Mbit Embedded MRAM Macro Using 2T1MTJ Cell with Bitline Separation and Half-pitch Shift Architecture
Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Hiroaki Honjo, Shinsaku Saito, Yuko Kato, Naoki Kasai (NEC)
pp. 69 - 74
ICD2008-14
Experimental proof of spin transfer switching in MRAM cell using TbCoFe/CoFeB layers with perpendicular magnetic anisotropy
Masahiko Nakayama, Tadashi Kai, Naoharu Shimomura, Minoru Amano, Eiji Kitagawa, Toshihiko Nagase, Masatoshi Yoshikawa, Tatsuya Kishi, Sumio Ikegawa, Hiroaki Yoda (R&D Center, Toshiba Corp.)
pp. 75 - 78
ICD2008-15
[Invited Talk]
Electrode Material Dependence on Binary Oxide RRAM Characteristics
Yukio Tamai (Sharp), Hisashi Shima, Hiroyuki Akinaga (AIST), Yasunari Hosoi, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp)
pp. 79 - 82
ICD2008-16
Realistic future trend of non-volatile semiconductor memory and feasibility study of ultra-low-cost high-speed universal non-volatile memory
-- feasibility study of BiCS type FeRAM --
Shigeyoshi Watanabe (Shonan Institute of Tech.)
pp. 83 - 88
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.