IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 110, Number 241

Silicon Device and Materials

Workshop Date : 2010-10-21 - 2010-10-22 / Issue Date : 2010-10-14

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Table of contents

SDM2010-152
[Invited Talk] Channel strain evaluation for advanced LSI
Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.)
pp. 1 - 6

SDM2010-153
Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens
Daisuke Kosemura, Atsushi Ogura (Meiji Univ.)
pp. 7 - 12

SDM2010-154
Mechanism of Work Function Modulation of PtSi Alloying with Yb
Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech)
pp. 13 - 16

SDM2010-155
A Study on Precise Control of PtSi Work Function by Alloying with Hf
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech)
pp. 17 - 20

SDM2010-156
Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes
Young-uk Song, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 21 - 24

SDM2010-157
Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors
Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 25 - 30

SDM2010-158
Low-temperature crystallization of thin-film amorphous silicon
Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba)
pp. 31 - 34

SDM2010-159
Study on Electron Transfer in Light-Emitting Polymer/Cathode Interface by Luminescence Computational Chemistry
Itaru Yamashita, Hiroaki Onuma, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 35 - 36

SDM2010-160
Emission Property Prediction of Eu2+-doped Phosphors from Crystal Structures: Material Informatics Study
Hiroaki Onuma, Daiki Yoshihara, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 37 - 38

SDM2010-161
Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells
Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 39 - 40

SDM2010-162
Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization
Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.)
pp. 41 - 44

SDM2010-163
Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double -Line-Beam CLC for High Performance LPTS-TFT
Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani (Tohoku Univ.), Takashi Ito (Tokyo Inst. of Tech.)
pp. 45 - 48

SDM2010-164
Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors
Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 49 - 52

SDM2010-165
Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects
Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 53 - 56

SDM2010-166
Characterization of In-situ Formed HfN/HfSiON Gate Stacks by ECR Sputtering
Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 57 - 60

SDM2010-167
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI)
pp. 61 - 65

SDM2010-168
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Silicon/Insulator Interface Formation Technologies
Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 67 - 68

SDM2010-169
Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
pp. 69 - 70

SDM2010-170
Strain evaluation in Si at atomically flat SiO2/Si interface
Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI)
pp. 71 - 75

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan