Online edition: ISSN 2432-6380
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LQE2023-54
AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech)
pp. 1 - 5
LQE2023-55
Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base
Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.)
pp. 6 - 10
LQE2023-56
Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD
Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.)
pp. 11 - 14
LQE2023-57
Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu)
pp. 15 - 20
LQE2023-58
Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy
Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.)
pp. 21 - 24
LQE2023-59
Formation of p-type GaN by Mg thermal diffusion and challenges for device applications
Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 25 - 30
LQE2023-60
Growth of low carbon density GaN on (0001) plane by MOVPE
Hirotaka Watanabe, Shugo Nitta, Naoki Fujimoto, Seiya Kawasaki, Takeru Kumabe, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 31 - 35
LQE2023-61
Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation
Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 36 - 39
LQE2023-62
Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures
Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 40 - 43
LQE2023-63
Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system
Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.)
pp. 44 - 47
LQE2023-64
Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell
Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.)
pp. 48 - 51
LQE2023-65
Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate
Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.)
pp. 52 - 55
LQE2023-66
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials
Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions)
pp. 56 - 59
LQE2023-67
BGaN growth condition optimization for BGaN neutron detectors and radiation detection characteristics
Takayuki Nakano, Yuri Takahashi, Yuto Ohta, Yuki Shimizu, Yoku Inoue, Toru Aoki (Shizuoka Univ.)
pp. 60 - 63
LQE2023-68
Z-scheme formation of visible light photocatalyst g-C3N4/SnS2
Yohei Mori, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ)
pp. 64 - 67
LQE2023-69
UV Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ ZnO:Ga Heterostructures with Annealed ZnO Nanorods Layers
Kaede Hirota, Masato Nakahori, Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Tecnol., Kagawa coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 68 - 71
LQE2023-70
Carrier Transport Mechanisms in PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 72 - 75
LQE2023-71
High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements
Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama (Meijo Univ.)
pp. 76 - 79
LQE2023-72
Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer
Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.)
pp. 80 - 83
LQE2023-73
Fabrication of vertical AlGaN-based UV-B LD
Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.)
pp. 84 - 87
LQE2023-74
Toward the thermal management of photonic and electronic devices of III-nitride materials
Yoshihiro Ishitani, Masaya Chizaki, Thee Ei Khaing Shwe, Bojin Lin, Tatsuya Asaji, Bei Ma (Chiba Univ.)
pp. 88 - 93
LQE2023-75
Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing
Yuto Oishi, Shiyu Xiao, Kenjiro Uesugi, Toru Akiyama, Tomohiro Tamano, Hideto Miyake (Mie University)
pp. 94 - 97
LQE2023-76
The properties of UV-B laser diodes on AlN nanopillars by using wet etching method
Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ)
pp. 98 - 101
LQE2023-77
Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels
Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima (Nippon Tungsten), Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara (RIKEN), Sachie Fujikawa, Hiroyuki Yaguchi (Saitama Univ), Yasushi Iwaisako (Nippon Tungsten), Hideki Hirayama (RIKEN)
pp. 102 - 105
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.