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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2012)
Search Results: Keywords 'from:2012-11-29 to:2012-11-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-29 10:00 |
Osaka | Osaka City University | Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.), Eiji Higurashi (Univ. Tokyo)  ED2012-65 CPM2012-122 LQE2012-93 |
[more] | ED2012-65 CPM2012-122 LQE2012-93 pp.1-5 |
| ED, LQE, CPM | 2012-11-29 10:25 |
Osaka | Osaka City University | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94 |
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] | ED2012-66 CPM2012-123 LQE2012-94 p.7 |
| ED, LQE, CPM | 2012-11-29 11:05 |
Osaka | Osaka City University | Applicationo of III-V nitride films to photovoltaic device Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) ED2012-67 CPM2012-124 LQE2012-95 |
We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mec... [more] | ED2012-67 CPM2012-124 LQE2012-95 pp.9-12 |
| ED, LQE, CPM | 2012-11-29 11:30 |
Osaka | Osaka City University | Estimation of Surface Fermi level differences in surface-modified GaN crystals Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.) ED2012-68 CPM2012-125 LQE2012-96 |
Surface-Fermi-level differences in hexagonal (0001)GaN as a function of the amount of surface oxides were estimated usin... [more] | ED2012-68 CPM2012-125 LQE2012-96 pp.13-15 |
| ED, LQE, CPM | 2012-11-29 11:55 |
Osaka | Osaka City University | High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch) Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC) ED2012-69 CPM2012-126 LQE2012-97 |
[more] | ED2012-69 CPM2012-126 LQE2012-97 pp.17-20 |
| ED, LQE, CPM | 2012-11-29 13:30 |
Osaka | Osaka City University | Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98 |
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] | ED2012-70 CPM2012-127 LQE2012-98 pp.21-24 |
| ED, LQE, CPM | 2012-11-29 13:55 |
Osaka | Osaka City University | Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99 |
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates pr... [more] | ED2012-71 CPM2012-128 LQE2012-99 pp.25-28 |
| ED, LQE, CPM | 2012-11-29 14:20 |
Osaka | Osaka City University | Evaluation of transient current of GaN HEMTs on Si under light Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100 |
We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] | ED2012-72 CPM2012-129 LQE2012-100 pp.29-32 |
| ED, LQE, CPM | 2012-11-29 14:45 |
Osaka | Osaka City University | Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ED2012-73 CPM2012-130 LQE2012-101 |
We focused Al2O3 as an insulator in MIS structures. MIS-diodes were fabricated with Al2O3 deposited by ALD on GaN at 200... [more] | ED2012-73 CPM2012-130 LQE2012-101 pp.33-36 |
| ED, LQE, CPM | 2012-11-29 15:25 |
Osaka | Osaka City University | Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] | ED2012-74 CPM2012-131 LQE2012-102 pp.37-40 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| ED, LQE, CPM | 2012-11-29 16:15 |
Osaka | Osaka City University | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104 |
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] | ED2012-76 CPM2012-133 LQE2012-104 pp.45-50 |
| ED, LQE, CPM | 2012-11-30 09:30 |
Osaka | Osaka City University | Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105 |
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] | ED2012-77 CPM2012-134 LQE2012-105 pp.51-54 |
| ED, LQE, CPM | 2012-11-30 09:55 |
Osaka | Osaka City University | RF-MBE Growth of InGaN-based quantum nanostructures using DERI Tsutomu Araki, Nao Uematsu, Junichi Sakaguchi, Ke Wang (Ritsumeikan Univ.), Tomohiro Yamaguchi (Kogakuin Univ.), Euijoon Yoon (Seoul National Univ.), Yasushi Nanishi (Ritsumeikan Univ.) ED2012-78 CPM2012-135 LQE2012-106 |
[more] | ED2012-78 CPM2012-135 LQE2012-106 pp.55-58 |
| ED, LQE, CPM | 2012-11-30 10:20 |
Osaka | Osaka City University | Nitride semiconductor np-LEDs for improvement of efficiency droop Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.) ED2012-79 CPM2012-136 LQE2012-107 |
A decrease of external quantum efficiency with an increase of injection current in nitride semiconductor LEDs, a so-call... [more] | ED2012-79 CPM2012-136 LQE2012-107 pp.59-64 |
| ED, LQE, CPM | 2012-11-30 11:00 |
Osaka | Osaka City University | Fabrication of red light emitting diode with GaN:Eu,Mg active layer Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech) ED2012-80 CPM2012-137 LQE2012-108 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2012-80 CPM2012-137 LQE2012-108 pp.65-70 |
| ED, LQE, CPM | 2012-11-30 11:25 |
Osaka | Osaka City University | Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109 |
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] | ED2012-81 CPM2012-138 LQE2012-109 pp.71-74 |
| ED, LQE, CPM | 2012-11-30 11:50 |
Osaka | Osaka City University | Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-82 CPM2012-139 LQE2012-110 |
Fabrication processes of a moth-eye patterned sapphire substrate (MPSS), which can enhance a light extraction efficiency... [more] | ED2012-82 CPM2012-139 LQE2012-110 pp.75-80 |
| ED, LQE, CPM | 2012-11-30 13:15 |
Osaka | Osaka City University | Mg acceptor activation inp-GaN of the structure with n-GaN surface Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111 |
Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopa... [more] | ED2012-83 CPM2012-140 LQE2012-111 pp.81-85 |
| ED, LQE, CPM | 2012-11-30 13:40 |
Osaka | Osaka City University | Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] | ED2012-84 CPM2012-141 LQE2012-112 pp.87-92 |
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