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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2013)
Search Results: Keywords 'from:2013-06-18 to:2013-06-18'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-06-18 09:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2013-44 |
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] | SDM2013-44 pp.1-6 |
| SDM | 2013-06-18 09:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] | SDM2013-45 pp.7-11 |
| SDM | 2013-06-18 09:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] | SDM2013-46 pp.13-18 |
| SDM | 2013-06-18 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47 |
[more] | SDM2013-47 pp.19-23 |
| SDM | 2013-06-18 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] | SDM2013-48 pp.25-28 |
| SDM | 2013-06-18 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49 |
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that H... [more] | SDM2013-49 pp.29-32 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM | 2013-06-18 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Schottky Barrier Height and spin polarization of Fe3Si/Ge Interfaces; First-Principles Study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2013-51 |
[more] | SDM2013-51 pp.39-42 |
| SDM | 2013-06-18 11:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Guiding principles of Long Lifespan Archive Memory using MONOS type Memory Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba) SDM2013-52 |
There is an increased demand for digital technology in archival storage infrastructure. Therefore, a long lifespan archi... [more] | SDM2013-52 pp.43-46 |
| SDM | 2013-06-18 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics Katsunori Makihara, Ryo Fukuoka, Hai Zhang, Yuuki Kabeya (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-53 |
[more] | SDM2013-53 pp.47-50 |
| SDM | 2013-06-18 13:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54 |
Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access... [more] | SDM2013-54 pp.51-55 |
| SDM | 2013-06-18 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2013-55 |
We demonstrated a novel biological process based on a use of a supra molecular protein as a reaction cage in which to fo... [more] | SDM2013-55 pp.57-60 |
| SDM | 2013-06-18 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] | SDM2013-56 pp.61-66 |
| SDM | 2013-06-18 14:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | SiC Electric-Field-Induced Resistive Nonvolatile Memory
-- MIS and pn-Diode Type Memories -- Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.) SDM2013-57 |
We have proposed two types of metal/tunneling oxide layer/SiOx electron trap layer/n-SiC/n-Si (MIS) and p-type oxide sem... [more] | SDM2013-57 pp.67-70 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2013-06-18 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Implementation of High-k Gate Dielectrics in SiC Power MOSFET Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59 |
[more] | SDM2013-59 pp.77-80 |
| SDM | 2013-06-18 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Challenges of high-reliability in SiC-MOS gate structures Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60 |
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally ... [more] | SDM2013-60 pp.81-86 |
| SDM | 2013-06-18 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] | SDM2013-61 pp.87-90 |
| SDM | 2013-06-18 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] | SDM2013-62 pp.91-96 |
| SDM | 2013-06-18 17:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Study on Near-interface Structures of Thermal Oxides Grown on4H-SiC Characterized by Infrared Spectroscopy Koji Kita (Univ. of Tokyo/JST), Hirohisa Hirai (Univ. of Tokyo) SDM2013-63 |
[more] | SDM2013-63 pp.97-100 |
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