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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2024-01-16 14:50 |
Online | Online | Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers Masahiro Nakano (Kanazawa Univ.), Hiroki Matsui, Md. Shahiduzzaman, Tetsuya Taima, Makoto Karakawa (anazawa Univ.)  OME2023-80 |
We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive ... [more] | OME2023-80 pp.13-17 |
| CPM | 2023-07-31 15:10 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Investigation of MIM structure with ZrN electrode as Resistive Random Access Memory Toyoki Miura, Masaru Sato, Mayumi Takeyama (Kitami Institute) CPM2023-14 |
In the rapidly advancing information society, higher performance nonvolatile memories are demanded. In such a situation,... [more] | CPM2023-14 pp.11-12 |
| SDM | 2022-11-11 09:30 |
Online | Online | [Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research) SDM2022-71 |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] | SDM2022-71 pp.32-39 |
| MRIS, CPM, ITE-MMS [detail] | 2022-10-27 13:30 |
Nagano | Shinshu Univ. (Primary: On-site, Secondary: Online) |
Investigation of magnetic structure of C11b Cr-Al thin film by magnetoresistance effect measurement Sota Iguchi, Sosuke Fujiwara, Kentaro Toyoki, Yu Shiratsuchi, Ryouichi Nakatani (Osaka Univ.) MRIS2022-6 CPM2022-37 |
The enrichment of library for antiferromagnetic material is essential for the development of magnetoresistance (MR) devi... [more] | MRIS2022-6 CPM2022-37 pp.1-5 |
| CPM | 2021-10-27 15:10 |
Online | Online | Characterization of HfO2 film for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B Takeyama (Kitami Inst. of Tech.) CPM2021-31 |
In recent years, resistive random access memory has been attracting attention because it can operate faster and consume ... [more] | CPM2021-31 pp.43-45 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| ED | 2021-02-22 14:30 |
Online | Online | Heart Beat Measurement of Human iPS Cell-Derived Cardiomyocytes using a MEMS Force Sensor Reita Ikegami, Takuya Tsukagoshi, Kentaro Noda, Takumi Tamamoto, Ken'ichi Koyanagi, Toru Oshima (Toyama Pref. Univ.), Kenei Matsudaira (Univ. Tokyo), Isao Shimoyama (Toyama Pref. Univ.) ED2020-40 |
The heartbeat of human iPS cell-derived cardiomyocytes was measured using a piezoresistive force sensor. The cells were ... [more] | ED2020-40 pp.9-11 |
| ED | 2016-07-23 15:30 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-30 |
We have previously proposed a two-terminal resistive nonvolatile p-Cu2O/SiCxOy(an electron-trapping layer)/n-SiC/n-Si-st... [more] | ED2016-30 pp.17-20 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2015-12-01 14:40 |
Nagasaki | Nagasaki Kinro Fukushi Kaikan | On discrimination method of a resistive open using delay variation induced by signal transitions on adjacent lines Kotaro Ise, Hiroyuki Yotsuyanagi, Masaki Hashizume (Tokushima Univ.), Yoshinobu Higami, Hiroshi Takahashi (Ehime Univ.) VLD2015-42 DC2015-38 |
The effect of a resistive open results in small delay in an IC. It is difficult to test small delay since signal delay a... [more] | VLD2015-42 DC2015-38 pp.31-36 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
| SDM | 2014-06-19 15:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57 |
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] | SDM2014-57 pp.75-78 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| DC | 2013-02-13 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristic Analysis of Signal Delay for Resistive Open Fault Detection Hiroto Ohguri, Hiroyuki Yotsuyanagi, Masaki Hashizume (Univ. of Tokushima), Toshiyuki Tsutsumi, Koji Yamazaki (Meiji Univ.), Yoshinobu Higami, Hiroshi Takahashi (Ehime Univ.) DC2012-84 |
When a resistive open fault occurs, signal delay at the faulty wire may degrade circuit performance. However, a resistiv... [more] | DC2012-84 pp.25-30 |
| NC, MBE (Joint) |
2011-03-07 15:00 |
Tokyo | Tamagawa University | A vision sensor with multiple spatial band-pass filtering Shinsuke Yasukawa, Hirotsugu Okuno, Tetsuya Yagi (Osaka Univ.) NC2010-139 |
A vision sensor with multiple spatial band-pass filtering has been developed. The vision sensor is comprised of an activ... [more] | NC2010-139 pp.71-76 |
| SDM, ED | 2009-06-24 15:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47 |
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] | ED2009-52 SDM2009-47 pp.9-12 |
| SDM, ED | 2009-06-24 15:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] | ED2009-53 SDM2009-48 pp.13-16 |
| SDM | 2007-03-15 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.) |
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] | SDM2006-255 pp.7-10 |
| ICD | 2005-04-15 10:30 |
Fukuoka | A 1.2V 1Mbit Embedded MRAM Core with Folded Bit-Line Array Architecture Takaharu Tsuji (Renesas Technorogy), Hiroaki Tanizaki (Renesas Device Design), Masatoshi Ishikawa, Jun Otani, Yuichiro Yamaguchi, Shuichi Ueno, Tsukasa Oishi, Hideto Hidaka (Renesas Technorogy) |
A 1Mbit MRAM with a 0.81um2 1-Transistor 1-Magnetic Tunnel Junction (1T-1MTJ) cell using 0.13um 4LM logic technology has... [more] | ICD2005-13 pp.1-6 |
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