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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2024-01-16 14:50 |
Online | Online | Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers Masahiro Nakano (Kanazawa Univ.), Hiroki Matsui, Md. Shahiduzzaman, Tetsuya Taima, Makoto Karakawa (anazawa Univ.)  OME2023-80 |
We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive ... [more] | OME2023-80 pp.13-17 |
| CPM | 2023-07-31 15:10 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Investigation of MIM structure with ZrN electrode as Resistive Random Access Memory Toyoki Miura, Masaru Sato, Mayumi Takeyama (Kitami Institute) CPM2023-14 |
In the rapidly advancing information society, higher performance nonvolatile memories are demanded. In such a situation,... [more] | CPM2023-14 pp.11-12 |
| ED, IEE-BMS, IEE-MSS | 2022-08-18 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Mechanism elucidation of resistance relaxation phenomena in Pt/Nb: SrTiO3 junctions
-- Toward the application of AI devices -- Hayato Nakamura, Hiromasa Aoki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-22 |
(To be available after the conference date) [more] | ED2022-22 pp.21-24 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| CPM | 2020-10-29 16:40 |
Online | Online | Preparation of low-temperature-deposited ZrO2 film applicable to RRAM Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21 |
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposit... [more] | CPM2020-21 pp.38-40 |
| ED | 2019-11-21 13:50 |
Tokyo | Fabrication of field emitter array with integral Si ballast resistor Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61 |
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] | ED2019-61 pp.9-12 |
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| SDM, ED, CPM | 2019-05-16 16:15 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14 |
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] | ED2019-16 CPM2019-7 SDM2019-14 pp.29-34 |
| ED | 2016-07-23 15:30 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-30 |
We have previously proposed a two-terminal resistive nonvolatile p-Cu2O/SiCxOy(an electron-trapping layer)/n-SiC/n-Si-st... [more] | ED2016-30 pp.17-20 |
| SDM | 2016-06-29 13:30 |
Tokyo | Campus Innovation Center Tokyo | A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] | SDM2016-38 pp.33-36 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| SDM | 2015-06-19 13:20 |
Aichi | VBL, Nagoya Univ. | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] | SDM2015-46 pp.41-45 |
| SDM | 2015-06-19 15:50 |
Aichi | VBL, Nagoya Univ. | Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] | SDM2015-52 pp.75-80 |
| SDM, EID | 2014-12-12 17:15 |
Kyoto | Kyoto University | Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132 |
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] | EID2014-37 SDM2014-132 pp.125-128 |
| SDM | 2014-06-19 15:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57 |
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] | SDM2014-57 pp.75-78 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| ED, SDM | 2014-02-28 12:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] | ED2013-149 SDM2013-164 pp.95-100 |
| SDM | 2012-06-21 09:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Directly Bonded SrTiO3 Substrate Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2012-44 |
As one of new non-volatile memory devices, much attention has been paid to the resistive switching memory which has a me... [more] | SDM2012-44 pp.7-12 |
| SDM | 2011-07-04 16:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67 |
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] | SDM2011-67 pp.97-102 |
| ITE-MMS, MRIS | 2010-10-14 16:15 |
Akita | Akita Research and Development Center | Fabrication of L10-FePt based TMR multilayer using Fe(PdxPt1-x) with tunable perpendicular magnetic anisotropy for spin torque transfer MRAM application Shogo Omiya, Satoru Yoshimura, Genta Egawa, Hitoshi Saito (Akita Univ.) MR2010-27 |
We have succeeded in fabrication of highly ordered L10-Fe(Pd,Pt) film with tunable perpendicular magnetic anisotropy. T... [more] |
MR2010-27 pp.31-36 |
| SDM | 2010-06-22 17:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Resistive Memory utilizing Ferritin Protein with Nano Particle
-- Control of a Current Path using Metal Nano Particle -- Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48 |
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] | SDM2010-48 pp.85-88 |
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