Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] |
2017-01-18 11:25 |
Mie |
Iseshi Kanko Bunka Kaikan |
The Period and the Incident Angle Dependence of Surface Plasmon Sensor using the 1D Metal Diffraction Grating and its Sensitivity Characteristic Yusuke Ito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-44 EMT2016-73 OPE2016-119 LQE2016-108 EST2016-83 MWP2016-57 |
The surface plasmon sensor is possible to detect to the target medium by using the excitation of surface plasmon polarit... [more] |
PN2016-44 EMT2016-73 OPE2016-119 LQE2016-108 EST2016-83 MWP2016-57 pp.13-18 |
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] |
2017-01-18 11:50 |
Mie |
Iseshi Kanko Bunka Kaikan |
A study on fabrication and polarization characteristic of a wire grid polarizer by using surface plasmon Tomoyasu Nakajima, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-45 EMT2016-74 OPE2016-120 LQE2016-109 EST2016-84 MWP2016-58 |
In order to obtain WGP with high excitation ratio, the optical properties of a double-layer wire grid polarizer (WGP) is... [more] |
PN2016-45 EMT2016-74 OPE2016-120 LQE2016-109 EST2016-84 MWP2016-58 pp.19-22 |
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] |
2017-01-19 15:25 |
Mie |
Iseshi Kanko Bunka Kaikan |
Fabrication and optical characterization of the optical element by the Au two-dimensional diffraction grating structure Taishi Yamada, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2016-82 EMT2016-111 OPE2016-157 LQE2016-146 EST2016-121 MWP2016-95 |
For the realization of the optical mirror, we fabricated the Au two-dimensional diffraction grating using an electron be... [more] |
PN2016-82 EMT2016-111 OPE2016-157 LQE2016-146 EST2016-121 MWP2016-95 pp.269-272 |
OPE, EST, LQE, EMT, PN, MWP, IEE-EMT [detail] |
2017-01-19 15:50 |
Mie |
Iseshi Kanko Bunka Kaikan |
Fabrication of the diffractive lens and controlling of the focal length and the depth of focus yosuke iguchi, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ) PN2016-83 EMT2016-112 OPE2016-158 LQE2016-147 EST2016-122 MWP2016-96 |
The focus controlling diffractive lens that could control the focal length and depth of focus was designed by structure ... [more] |
PN2016-83 EMT2016-112 OPE2016-158 LQE2016-147 EST2016-122 MWP2016-96 pp.273-278 |
ED, LQE, CPM |
2015-11-26 10:55 |
Osaka |
Osaka City University Media Center |
Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] |
ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
ED, LQE, CPM |
2015-11-26 11:20 |
Osaka |
Osaka City University Media Center |
AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] |
ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
ED, LQE, CPM |
2015-11-26 15:05 |
Osaka |
Osaka City University Media Center |
[Invited Talk]
Spatio-time-resolved cathodoluminescence studies on Si-doped high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN epitaxial templates Shigefusa Chichibu (Tohoku U.), Hifdeto Miyake, Kazumasa Hiramatsu (Mie-U) ED2015-76 CPM2015-111 LQE2015-108 |
[more] |
ED2015-76 CPM2015-111 LQE2015-108 pp.43-48 |
OPE, LQE |
2014-12-18 11:05 |
Tokyo |
Kikai-Shinko-Kaikan, NTT Atsugi R&D center |
Fabrication of the 2D metal grating structure for the application to an optical filter and optical characterization Masanori Kito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) OPE2014-141 LQE2014-128 |
As heat-ray shielding steps replacing conventional technique, we fabricated the 2D metal grating structure by electron b... [more] |
OPE2014-141 LQE2014-128 pp.11-14 |
LQE, ED, CPM |
2014-11-27 11:50 |
Osaka |
|
Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104 |
[more] |
ED2014-76 CPM2014-133 LQE2014-104 pp.15-18 |
LQE, ED, CPM |
2014-11-28 16:00 |
Osaka |
|
Effects of thermal cleaning on surface of bulk GaN substrates Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124 |
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] |
ED2014-96 CPM2014-153 LQE2014-124 pp.111-115 |
CPM, ED, SDM |
2014-05-29 11:15 |
Aichi |
|
Surface treatment and homoepitaxial growth on AlN substrate Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35 |
Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-u... [more] |
ED2014-37 CPM2014-20 SDM2014-35 pp.97-100 |
CPM, LQE, ED |
2013-11-29 11:00 |
Osaka |
|
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 |
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] |
ED2013-79 CPM2013-138 LQE2013-114 pp.71-74 |
CPM, LQE, ED |
2013-11-29 11:25 |
Osaka |
|
Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115 |
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] |
ED2013-80 CPM2013-139 LQE2013-115 pp.75-78 |
CPM, LQE, ED |
2013-11-29 11:50 |
Osaka |
|
Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2013-81 CPM2013-140 LQE2013-116 |
Aluminum nitride (AlN) has a direct bandgap energy of 6.2 eV, which is the largest bandgap energy among III-V semiconduc... [more] |
ED2013-81 CPM2013-140 LQE2013-116 pp.79-82 |
OME, IEE-DEI |
2013-01-24 16:50 |
Aichi |
|
Growth of graphene by low pressure chemical vapor deposition Takaya Maesaka, Hideki Sato, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) OME2012-89 |
We have synthesized graphene film by a low-pressure chemical vapor deposition (LP-CVD) method using ethanol as a carbon ... [more] |
OME2012-89 pp.31-35 |
ED, LQE, CPM |
2012-11-30 09:30 |
Osaka |
Osaka City University |
Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105 |
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] |
ED2012-77 CPM2012-134 LQE2012-105 pp.51-54 |
ED, LQE, CPM |
2012-11-30 14:05 |
Osaka |
Osaka City University |
Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113 |
AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] |
ED2012-85 CPM2012-142 LQE2012-113 pp.93-96 |
LQE, ED, CPM |
2011-11-17 10:30 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Control of interlayer on MOVPE growth of AlN on sapphire substrate Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) ED2011-74 CPM2011-123 LQE2011-97 |
The strong demands for high-efficiency light-emitting diodes and for high-sensitivity sensors in the deep-ultraviolet (U... [more] |
ED2011-74 CPM2011-123 LQE2011-97 pp.5-10 |
LQE, ED, CPM |
2011-11-17 10:55 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Etch-pit method of threading dislocations in epitaxial AlN films Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) ED2011-75 CPM2011-124 LQE2011-98 |
AlN is an attractive substrate for short-wavelength optoelectronics devices based on AlGaN. We have investigated threadi... [more] |
ED2011-75 CPM2011-124 LQE2011-98 pp.11-14 |
CPM, SDM, ED |
2011-05-19 09:25 |
Aichi |
Nagoya Univ. (VBL) |
High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE Yuta Takagi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2011-2 CPM2011-9 SDM2011-15 |
[more] |
ED2011-2 CPM2011-9 SDM2011-15 pp.7-10 |