Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2015-01-16 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An X-band 310 W High Power GaN HEMT Amplifier Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190 |
A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band application... [more] |
ED2014-126 MW2014-190 pp.53-58 |
MW (2nd) |
2014-11-26 - 2014-11-28 |
Overseas |
King Mongkut's Institute of Technology Ladkrabang (KMITL), Bangkok |
Fundamental Experiment of S-band Low Noise Amplifier and Dielectric Microcalorimeter for X-ray Detection System Takumasa Noji (Tokyo Metropolitan Univ.), Akihira Miyachi, Takahiro Kikuchi, Ju Hyeonjae, Naoki Hasegawa, Satoshi Yoshida, Noriko Y. Yamasaki, Kazuhisa Mitsuda (JAXA), Takaya Ohashi (Tokyo Metropolitan Univ.), Shigeo Kawasaki (JAXA) |
In this paper, we demonstrate the result of combining a low noise amplifier (LNA) and a dielectric microcalorimeter (DMC... [more] |
|
SAT, RCS (Joint) |
2014-08-20 15:50 |
Kochi |
Kochi City Cultura-Plaza CUL-PORT |
Evaluation of Super High Bit Rate Massive MIMO Transmission Using Higher Frequency Bands by Link Budget Jiyun Shen, Satoshi Suyama, Tatsunori Obara, Yukihiko Okumura (NTT DOCOMO) RCS2014-155 |
In order to realize the 5th generation (5G) mobile network with super high bit rate and capacity, we employee small cell... [more] |
RCS2014-155 pp.97-102 |
ICD, SDM |
2014-08-05 13:05 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
[Invited Talk]
Oxide Semiconductor-based Transistors Formed in LSI Interconnects Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45 |
We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] |
SDM2014-76 ICD2014-45 pp.77-82 |
OME, EMD, CPM |
2014-06-20 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Crystalline structure and dislocation distribution of a ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2 and O2 reaction Tomoki Nakamura, Yuki Ishiduka, Naoya Yamaguchi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-16 CPM2014-36 OME2014-24 |
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] |
EMD2014-16 CPM2014-36 OME2014-24 pp.43-48 |
SDM |
2014-01-29 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137 |
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] |
SDM2013-137 pp.9-12 |
RCS, SIP |
2014-01-24 11:10 |
Fukuoka |
Kyushu Univ. |
Sophisticated Channel Estimation for Single-Carrier Space-Time Block Coded Time-Division Duplex Transmission with Multi-Block FDE Hiroyuki Miyazaki, Fumiyuki Adachi (Tohoku Univ.) SIP2013-118 RCS2013-288 |
Recently, we proposed a multi-block frequency-domain equalization (MB-FDE) for single-carrier (SC) space-time block code... [more] |
SIP2013-118 RCS2013-288 pp.193-198 |
NLP |
2014-01-21 13:30 |
Hokkaido |
Niseko Park Hotel |
DTN routing method by using neural networkas. Daisuke Sasaki (Tohoku Univ), Yoshihiro Hayakawa (SNCT), Shigeo Sato, Koji Nakajima (Tohoku Univ) NLP2013-136 |
A Disruption tolerant Network (DTN) is studied as a communicating technique for the time when a network infrastructure w... [more] |
NLP2013-136 pp.41-44 |
ED, MW |
2014-01-16 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] |
ED2013-115 MW2013-180 pp.29-33 |
RCS, NS (Joint) |
2013-12-19 13:40 |
Kagawa |
Sunport Hall Takamatsu |
Future Radio Access and Mobile Optical Network
-- Part I -- Yukihiko Okumura, Takehiro Nakamura (NTT DOCOMO) NS2013-143 RCS2013-231 |
In this report, towards realization of a future mobile network with super high bit rate and capacity, a new radio access... [more] |
NS2013-143 RCS2013-231 pp.55-60(NS), pp.149-154(RCS) |
RCS, NS (Joint) |
2013-12-19 14:05 |
Kagawa |
Sunport Hall Takamatsu |
Future Radio Access and Mobile Optical Network
-- Part II -- Yukihiko Okumura, Takehiro Nakamura (NTT DOCOMO) NS2013-144 RCS2013-232 |
In this report, towards realization of a future mobile network with super high bit rate and capacity, a new radio access... [more] |
NS2013-144 RCS2013-232 pp.61-66(NS), pp.155-160(RCS) |
RCS, NS (Joint) |
2013-12-20 16:10 |
Kagawa |
Sunport Hall Takamatsu |
FDE Weight for Single-Carrier Space-Time Block Coded Time Division Duplex Transmission in High Mobility Environment Hiroyuki Miyazaki, Fumiyuki Adachi (Tohoku Univ.) RCS2013-254 |
Recently, we proposed a multi-block transmit frequency-domain equalization (FDE), which uses multiple weight matrices co... [more] |
RCS2013-254 pp.279-284 |
ED |
2013-08-09 09:00 |
Toyama |
University of Toyama |
MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44 |
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] |
ED2013-44 pp.33-36 |
ED |
2013-08-09 09:25 |
Toyama |
University of Toyama |
Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] |
ED2013-45 pp.37-42 |
CPM |
2013-08-02 10:00 |
Hokkaido |
|
Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2-O2 reaction Naoya Yamaguchi, Tomohiko Takeuchi, Tomoki Nakamura, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2013-49 |
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] |
CPM2013-49 pp.51-56 |
EMD, CPM, OME |
2013-06-21 16:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effect of N2O doping on the properties of ZnO thin films grown using high-energy H2O generated by a catalytic reaction Naoya Yamaguchi, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Takahiro Kato, Kanji Yasui (Nagaoka Univ. of Tech.) EMD2013-22 CPM2013-37 OME2013-45 |
ZnO films were grown using a reaction between an alkylzinc (DMZn) gas and high-energy H2O, the latter is generated by a ... [more] |
EMD2013-22 CPM2013-37 OME2013-45 pp.83-87 |
SDM |
2013-06-18 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] |
SDM2013-48 pp.25-28 |
MW, SCE, WPT (Joint) [detail] |
2013-04-19 16:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Proposal of Wireless Power Transfer System using Parallel Line Feeder Takeshi Higashino, Ziji Ma, Minoru Okada (NAIST), Yasuaki Tatsuta, Yoshikazu Goto, Yoshinori Tsuruda, Ryohei Tanaka (DAIHEN) |
This paper proposes a wireless power transmission system using a parallel transmission line in order support mobility fo... [more] |
|
ED |
2013-04-19 11:35 |
Miyagi |
|
Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient Kazutoshi Funakubo, Shuya Inomata, Ryo Inomata, Goon-Ho Park (Tohoku Univ.), Masato Kotsugi (JASRI), Hirokazu Fukidome, Maki Suemitsu (Tohoku Univ.) ED2013-15 |
Recently, graphene has attracted increasing attention as a new FET channel material to substitute Si. However, the field... [more] |
ED2013-15 pp.59-62 |
VLD |
2013-03-05 16:25 |
Okinawa |
Okinawa Seinen Kaikan |
[Memorial Lecture]
Network Simplex Method Based Multiple Voltage Scheduling in Power-Efficient High-Level Synthesis Cong Hao, Song Chen, Takeshi Yoshimura (Waseda Univ.) VLD2012-153 |
In this work, we focus on the problem of latencyconstrained
scheduling with consideration of multiple voltage
technolo... [more] |
VLD2012-153 pp.93-98 |