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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2024-04-12 10:45 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Recent Developments and Challenges for NAND Flash Memory Interface Takashi Toi (KIOXIA)  ICD2024-11 |
(To be available after the conference date) [more] | ICD2024-11 p.36 |
| ICD | 2024-04-12 13:25 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Lecture]
5-Bit/2Cell(X2.5), 7-Bit/2Cell(X3.5), 9-Bit/2Cell(X4.5) NAND Flash Memory: Half Bit technology Noboru Shibata, Hironori Uchikawa, Taira Shibuya, Kenri Nakai, Kosuke Yanagidaira, Kosuke Yanagidaira (KIOXIA) ICD2024-13 |
Abstract—For achieving lower giga-byte cost with high reliability and high performance, 3.5bit/cell(X3.5) Flash memory i... [more] | ICD2024-13 p.42 |
| SDM | 2024-01-31 13:35 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory Masayoshi Tagami (KIOXIA) SDM2023-76 |
3D stacked devices have been developed and manufactured to realize gains in power, performance, area and cost (PPAC) in ... [more] | SDM2023-76 pp.9-12 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] | 2023-11-17 09:35 |
Kumamoto | Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
A comparator with variable offset voltage variation by controlling differential pair’s currents Taira Sakaguchi, Satoshi Komatsu (Tokyo Denki Univ.) VLD2023-67 ICD2023-75 DC2023-74 RECONF2023-70 |
We propose a comparator with variable offset voltage variation.The proposed comparator is based on a conventional Strong... [more] | VLD2023-67 ICD2023-75 DC2023-74 RECONF2023-70 pp.192-197 |
| SDM | 2023-10-13 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56 |
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] | SDM2023-56 pp.13-20 |
| HIP, HCS, HI-SIGCOASTER [detail] | 2023-05-15 15:35 |
Okinawa | Okinawa Industry Support Center (Primary: On-site, Secondary: Online) |
Analysis of spatio-temporal characteristics of asymmetric mislocalization in the flash-lag effect Akihiro Fukada, Kenji Yokoi (NDA) HCS2023-17 HIP2023-17 |
Although various explanations have been proposed for the flash-hag effect, the whole mechanism has been unclear yet. In ... [more] | HCS2023-17 HIP2023-17 pp.79-84 |
| ICD | 2023-04-11 11:00 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
1 Tb 4b/Cell 176-Tier 3D NAND Flash with 4 Independent Planes for Read Tomoharu Tanaka (MMJ) ICD2023-9 |
In the presentation, a 1Tb 4b/cell 3D-NAND-Flash memory on a 176-tier technology with a 14.7Gb/mm2 bit density is shown ... [more] | ICD2023-9 p.17 |
| DC | 2023-02-28 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg (Primary: On-site, Secondary: Online) |
Stochastic flash ADC with variable input voltage range Taira Sakaguchi, Satoshi Komatsu (Tokyo Denki Univ.) DC2022-90 |
In this study, a stochastic flash ADC with variable input voltage range is proposed. A stochastic flash ADC uses random ... [more] | DC2022-90 pp.45-50 |
| SDM | 2023-01-30 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance >107 for eFlash-type MRAM H Honjoi, K Nishioka, S Miura, Hiroshi Naganuma, T Watanabe, T Nasuno, T Tanigawa, Y Noguchi, H Inoue, M Yasuhiro, S Ikeda, T Endoh (Tohoku Univ.) SDM2022-81 |
A solder reflow capable eflash-type MRAM was realized by interfacial perpendicular magnetic anisotropy Hexa-CoFeB/MgO-in... [more] | SDM2022-81 pp.9-12 |
| EE | 2023-01-20 10:25 |
Fukuoka | Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
Design of fast ramping-up boost converters for NAND Flash Yuji Kanayama, Tanazawa Toru (Shizuoka Univ.) EE2022-44 |
A boost circuit is used to charge the word line capacitance load to a high voltage for writing and erasing the data in S... [more] | EE2022-44 pp.101-106 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 11:45 |
Online | [Invited Talk]
Optimal Cell Structure/Operation Design of 3D Semicircular Split-gate Cells for Ultra-high-density Flash Memory Tetsu Morooka, , , , , , , , , , , , , , , , , , , , , , , , (Kioxia) SDM2022-36 ICD2022-4 |
Control gate split cell structure for increasing the cell density by foot-print reduction has several challenges such as... [more] | SDM2022-36 ICD2022-4 p.12 |
|
| CCS, NLP | 2022-06-09 13:00 |
Osaka | (Primary: On-site, Secondary: Online) |
Conditional entropy based DDoS Attack detection in Software Defined Network Tian QiWen, miyata sumiko (SIT) NLP2022-1 CCS2022-1 |
In order to detect each network attack in an SDN environment, an attack detection method has been proposed based on the ... [more] | NLP2022-1 CCS2022-1 pp.1-6 |
| ED | 2022-04-21 11:00 |
Online | Online | TIQ Based Flash ADC with Threshold Compensation Yuhei Hashimoto, Cong-Kha Pham (UEC) ED2022-5 |
It is known that Analog-to-digital converter using TIQ comparators are vulnerable to process and temperature variations,... [more] | ED2022-5 pp.15-18 |
| HIP, VRSJ | 2021-02-18 14:05 |
Online | Online | Reappearance of faded afterimages Yushan Hu, Hiroyuki Ito (Kyushu Univ.) HIP2020-76 |
In this study, we investigated the reappearance of a faded negative afterimage by psychophysical methods. We tested blin... [more] | HIP2020-76 pp.20-24 |
| SDM | 2020-01-28 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Future of Non-Volatile Memory - From Storage to Computing Kazunari Ishimaru (kioxia) SDM2019-87 |
More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expande... [more] | SDM2019-87 p.19 |
| HIP | 2019-12-20 10:45 |
Miyagi | RIEC, Tohoku University | Influence of dominant hand on physical attention Kyosuke Iwai, Chia-huei Tseng, Ichiro Kuriki, Satoshi Shioiri (Tohoku Univ) HIP2019-75 |
The presence of attention (physical attention) that is potentially directed to the vicinity of the body has been pointed... [more] | HIP2019-75 pp.57-60 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 09:40 |
Ehime | Ehime Prefecture Gender Equality Center | Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2019-36 DC2019-60 |
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] | VLD2019-36 DC2019-60 pp.63-68 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 14:15 |
Ehime | Ehime Prefecture Gender Equality Center | Neural Network-based Lifetime Prediction and Reliability Enhancement Techniques for 3D NAND Flash Memory Masaki Abe, Ken Takeuchi (Chuo Univ.) ICD2019-30 IE2019-36 |
NAND flash memories have lifetime such as data-retention time and read cycles. This paper proposes neural network techni... [more] | ICD2019-30 IE2019-36 pp.7-12 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-15 15:45 |
Ehime | Ehime Prefecture Gender Equality Center | Design of optimal NV-memory configuration for hybrid SSD with QLC NAND flash memory Yoshiki Takai, Mamoru Fukuchi, Chihiro Matsui, Reika Kinoshita, Ken Takeuchi (Chuo Univ.) ICD2019-41 IE2019-47 |
In order to expand capacity and reduce cost of NAND flash memory, the number of bits per cell has been increased. Howeve... [more] | ICD2019-41 IE2019-47 pp.59-63 |
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:45 |
Miyagi | [Invited Talk]
3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] | R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 pp.35-38 |
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