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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
14:20		 Shizuoka   Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57		 In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] ED2023-17 CPM2023-59 LQE2023-57
pp.15-20
CPM 2019-11-07
15:25		 Fukui Fukui univ. Nitrogen doping to ZnO films in a catalytic reaction assisted chemical vapor deposition
Ryuta Iba, Hiroki Kambayashi, Yuki Adachi (NUT), Koichiro Oishi, Hironori Katagiri (NITNC), Kanji Yasui (NUT) CPM2019-47		 The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] CPM2019-47
pp.15-19
CPM, IEE-MAG 2018-11-01
13:25		 Niigata Machinaka campus Nagaoka Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface
Taro Saito, Yuki Adachi, Ryuta Iba, Shotaro Ono (Nagaoka Univ. of Tech.), Koichiro Oishi, Hironori Katagiri (Nat. Inst. Tech., Nagaoka Coll.), Kanji Yasui (Nagaoka Univ. of Tech.) CPM2018-42		 The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] CPM2018-42
pp.5-9
EMD, CPM, OME 2015-06-19
14:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28		 Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effec... [more] EMD2015-15 CPM2015-25 OME2015-28
pp.23-27
ED 2015-04-17
09:55		 Miyagi Laboratory for Nanoelectronics and Spintronics Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11		 Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2015-11
pp.53-58
ED 2014-04-18
09:50		 Yamagata The 100th Anniversary Hall, Yamagata University Fabrication of hafnium oxide using room-temperature atomic layer deposition
Kensaku Kanomata, Hisashi Ohba, Bashil Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2014-13		 Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2014-13
pp.51-54
CPM 2013-10-25
09:30		 Niigata Niigata Univ. Satellite Campus TOKIMEITO Fabrication of titanium oxide using plasma excited atomic layer deposition
Kensaku Kanomata, Hisashi Ohba, Katsuaki Momiyama, Takahiko Suzuki, Bashil Ahmmad, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) CPM2013-102		 Room-temperature atomic layer deposition (ALD) of titanium dioxide is developed using tetrakis(dimethylamino)titanium (T... [more] CPM2013-102
pp.45-48
SDM 2007-06-07
16:45		 Hiroshima Hiroshima Univ. ( Faculty Club) Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance
Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38		 High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] SDM2007-38
pp.37-42
 Results 1 - 8 of 8  /   
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