| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-06-21 16:05 |
Aichi | Nagoya Univ. VBL3F | First principle simulation about phase change of superlattice GeTe/Sb2Te3 Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)  SDM2019-33 |
GeTe/ Sb2Te3 superlattice is used in memory elements of interfacial phase change memory (iPCM). iPCM is one of the most ... [more] | SDM2019-33 pp.39-42 |
| SDM | 2018-06-25 15:55 |
Aichi | Nagoya Univ. VBL3F | First principle investigation of superlattice GeTe/Sb2Te3 phase change Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2018-24 |
[more] | SDM2018-24 pp.37-41 |
| SDM | 2017-11-09 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] | SDM2017-61 pp.1-4 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| SDM | 2014-06-19 13:45 |
Aichi | VBL, Nagoya Univ. | Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52 |
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] | SDM2014-52 pp.49-53 |
| SDM | 2014-06-19 14:05 |
Aichi | VBL, Nagoya Univ. | Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] | SDM2014-53 pp.55-58 |
| CPM, ED, SDM | 2014-05-28 15:35 |
Aichi | First-principles simulation on electron-scattering process in magnetoresistive memory Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.) ED2014-27 CPM2014-10 SDM2014-25 |
Magnetoresistance memory is expected as emerging memory device due to the desired functions such as non-volatility, fast... [more] | ED2014-27 CPM2014-10 SDM2014-25 pp.47-50 |
|
| SDM | 2013-11-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Role of Computational Sciences in Design of Modern Electron Devices Kenji Shiraishi (Nagoya Univ.) SDM2013-101 |
Recent computational science plays important roles in development of new materials and modern electron devices. Among th... [more] | SDM2013-101 pp.9-14 |
| SDM | 2013-06-18 11:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Guiding principles of Long Lifespan Archive Memory using MONOS type Memory Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba) SDM2013-52 |
There is an increased demand for digital technology in archival storage infrastructure. Therefore, a long lifespan archi... [more] | SDM2013-52 pp.43-46 |
| SDM | 2011-11-11 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Enhancement of current density in asymmetric horn-shaped channel
-- Ensemble Monte-Carlo/Molecular Dynamics Simulation -- Takefumi Kamioka (Waseda Univ./JST), Hiroya Imai (Waseda Univ.), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba/JST), Yoshinari Kamakura (Osaka Univ./JST), Takanobu Watanabe (Waseda Univ./JST) SDM2011-123 |
Effect of channel shape on nano-scale carrier transport is studied by using the ensemble Monte-Carlo / molecular dynamic... [more] | SDM2011-123 pp.45-50 |
| SDM | 2011-07-04 11:20 |
Aichi | VBL, Nagoya Univ. | Photoluminescence and interface properties of Si nanolayers and nanowires Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56 |
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] | SDM2011-56 pp.35-39 |
| SDM | 2010-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] | SDM2010-175 pp.23-28 |
| ED, SDM | 2010-07-02 15:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.) ED2010-100 SDM2010-101 |
Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS type memories are inevitabl... [more] | ED2010-100 SDM2010-101 pp.221-224 |
| ED, SDM | 2010-07-02 16:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] | ED2010-122 SDM2010-123 pp.319-324 |
| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| SDM, ED | 2009-06-26 11:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88 |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] | ED2009-93 SDM2009-88 pp.185-188 |
| SDM | 2008-12-05 13:15 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | [Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] | SDM2008-188 pp.21-25 |
| SDM | 2008-06-10 13:45 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi) SDM2008-55 |
[more] | SDM2008-55 pp.77-82 |
| SDM | 2007-06-07 13:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba) SDM2007-31 |
For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] | SDM2007-31 pp.1-6 |
| SDM | 2007-06-07 15:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35 |
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] | SDM2007-35 pp.23-26 |
[Return to Top Page]