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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| PRMU, IPSJ-CVIM | 2021-03-05 10:00 |
Online | Online | Automatic music transcription system based on convolutional neural network for electric guitar considering sounds of same pitch and different strings Toshiaki Matsui, Tetsuya Matsumoto, Hiroaki Kudo (Nagoya Univ), Yoshinori Takeuchi (Daido Univ)  PRMU2020-86 |
In this research, we propose a system that outputs tablature notation of an electric guitar performance from acoustic si... [more] | PRMU2020-86 pp.97-102 |
| AP, MW (Joint) |
2012-09-28 10:00 |
Saitama | KDDI R&D LABS | Sensor application of a Mesoscopic SNS junction array with enlarged negative resistance region Toshiaki Matsui, Akira Kawakami, Akifumi Kasamatsu (NICT) MW2012-73 |
[more] | MW2012-73 pp.43-48 |
| ED | 2010-06-17 15:15 |
Ishikawa | JAIST | Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] | ED2010-38 pp.25-30 |
| ED | 2009-11-29 15:30 |
Osaka | Osaka Science & Technology Center | Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163 |
To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] | ED2009-163 pp.19-23 |
| ED, LQE, CPM | 2009-11-20 15:50 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138 |
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] | ED2009-159 CPM2009-133 LQE2009-138 pp.151-155 |
| MW, ED | 2009-01-15 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2008-214 MW2008-179 pp.95-99 |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| ED | 2008-12-19 15:05 |
Miyagi | Tohoku Univ. | Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 |
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] | ED2008-187 pp.15-20 |
| ED | 2008-12-19 16:20 |
Miyagi | Tohoku Univ. | [Invited Talk]
Wireless system technologies and millimeter-wave device research Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190 |
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] | ED2008-190 pp.33-34 |
| ED | 2007-11-27 13:30 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] | ED2007-187 pp.1-5 |
| ED | 2007-11-27 13:55 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Fabrication of ultrafast InP-based HEMTs for MMIC application Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2007-188 pp.7-10 |
| ED | 2007-11-27 14:45 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] | ED2007-190 pp.17-21 |
| ED, SDM, R | 2006-11-24 15:15 |
Osaka | Central Electric Club | Effects of heterointerface flatness on device performance of InP-based HEMT
-- Reduction of interface roughness scattering using (411)A-oriented substrate -- Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) |
[more] | R2006-35 ED2006-180 SDM2006-198 pp.21-25 |
| ED, CPM, LQE | 2006-10-05 15:45 |
Kyoto | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] | ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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| EMCJ, MW | 2005-10-28 16:00 |
Akita | Akita University | UWB Pulse Generation and Reshaping Using UWB Bandpass Filters Keren Li, Daisuke Kurita, Toshiaki Matsui (NICT) |
[more] | EMCJ2005-105 MW2005-111 pp.69-74 |
| LQE, ED, CPM | 2005-10-13 17:40 |
Shiga | Ritsumeikan Univ. | Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT) |
[more] | ED2005-138 CPM2005-125 LQE2005-65 pp.93-96 |
| MW | 2005-05-19 13:50 |
Shiga | Ultra-Wideband Bandpass Filters Using Broadside-Coupled Structure Keren Li (NICT), Daisuke Kurita (Tokyo Univ. of Science), Toshiaki Matsui (NICT) |
[more] | MW2005-17 pp.31-36 |
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