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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-12 09:30 |
Online | Online | [Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.)  SDM2021-60 |
SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] | SDM2021-60 pp.38-42 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
| SDM, ED, CPM | 2017-05-26 09:55 |
Aichi | VBL, Nagoya University | Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18 |
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] | ED2017-24 CPM2017-10 SDM2017-18 pp.51-54 |
| CPM, LQE, ED | 2016-12-12 14:40 |
Kyoto | Kyoto University | Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77 |
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] | ED2016-61 CPM2016-94 LQE2016-77 pp.21-26 |
| SDM, EID | 2016-12-12 14:45 |
Nara | NAIST | Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103 |
In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes suppl... [more] | EID2016-22 SDM2016-103 pp.59-62 |
| EID, SDM | 2015-12-14 11:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Distribution of Forming Characteristics in NiO-based ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) EID2015-12 SDM2015-95 |
[more] | EID2015-12 SDM2015-95 pp.13-17 |
| SDM, EID | 2014-12-12 10:00 |
Kyoto | Kyoto University | Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108 |
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] | EID2014-13 SDM2014-108 pp.1-6 |
| SDM, EID | 2014-12-12 10:15 |
Kyoto | Kyoto University | Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] | EID2014-14 SDM2014-109 pp.7-11 |
| SDM, EID | 2014-12-12 16:45 |
Kyoto | Kyoto University | Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 |
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] | EID2014-35 SDM2014-130 pp.115-118 |
| SDM, EID | 2014-12-12 17:30 |
Kyoto | Kyoto University | Resistive switching characteristics of NiO-based ReRAM after semi-forming process. Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133 |
In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] | EID2014-38 SDM2014-133 pp.129-134 |
| SDM | 2013-12-13 16:40 |
Nara | NAIST | Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] | SDM2013-131 pp.91-96 |
| SDM | 2013-12-13 17:20 |
Nara | NAIST | Characterization of interface states in SiC MOS structures with various crystal faces by conductance method Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133 |
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] | SDM2013-133 pp.101-105 |
| SDM | 2013-06-18 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Implementation of High-k Gate Dielectrics in SiC Power MOSFET Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59 |
[more] | SDM2013-59 pp.77-80 |
| SDM | 2012-12-07 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115 |
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] | SDM2012-115 pp.1-5 |
| SDM | 2012-12-07 16:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) SDM2012-137 |
We have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of ... [more] | SDM2012-137 pp.129-132 |
| SDM | 2011-12-16 11:00 |
Nara | NAIST | Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135 |
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] | SDM2011-135 pp.17-21 |
| SDM | 2011-12-16 16:20 |
Nara | NAIST | Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146 |
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] | SDM2011-146 pp.77-82 |
| SDM | 2011-12-16 17:00 |
Nara | NAIST | Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-148 |
[more] | SDM2011-148 pp.87-92 |
| LQE, ED, CPM | 2011-11-17 10:05 |
Kyoto | Katsura Hall，Kyoto Univ. | AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96 |
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] | ED2011-73 CPM2011-122 LQE2011-96 pp.1-4 |
| LQE, ED, CPM | 2011-11-17 14:50 |
Kyoto | Katsura Hall，Kyoto Univ. | Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-81 CPM2011-130 LQE2011-104 |
[more] | ED2011-81 CPM2011-130 LQE2011-104 pp.39-42 |
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