Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-01-31 12:35 |
Tokyo |
KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2023-74 |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] |
SDM2023-74 pp.1-4 |
RECONF, VLD |
2024-01-29 14:40 |
Kanagawa |
AIRBIC Meeting Room 1-4 (Primary: On-site, Secondary: Online) |
VLD2023-85 RECONF2023-88 |
We are developing a signal processing ASIC designed to operate at extremely low temperatures with the goal of realizing ... [more] |
VLD2023-85 RECONF2023-88 pp.31-34 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 10:45 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
A research on a cryogenic ADC for acquisition of environmental noise near quantum devices. Tomoya Yamada, Ryozo Takahashi, Takuji Miki, Makoto Nagata (Kobe Univ.) SDM2023-36 ICD2023-15 |
Scaling up the number of qubits is essential to realize a fault-tolerant quantum computer. However, as the number of qub... [more] |
SDM2023-36 ICD2023-15 pp.6-9 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 16:10 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] |
SDM2023-41 ICD2023-20 pp.28-31 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 16:35 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] |
SDM2023-42 ICD2023-21 pp.32-35 |
MSS, CAS, SIP, VLD |
2023-07-07 13:30 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
CAS2023-23 VLD2023-23 SIP2023-39 MSS2023-23 |
Quantum computers are next-generation computers that perform massively parallel calculations using the principles of qua... [more] |
CAS2023-23 VLD2023-23 SIP2023-39 MSS2023-23 pp.113-118 |
SDM |
2023-06-26 10:50 |
Hiroshima |
Hiroshima Univ. (Res. Inst. of Nanodevices) |
[Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] |
SDM2023-28 pp.5-6 |
ICD, SDM, ITE-IST [detail] |
2022-08-08 16:10 |
Online |
|
A cryogenic digital-to-analog converter for high-fidelity control of large-scale qubit arrays Ryozo Takahashi, Takuji Miki, Makoto Nagata (Kobe Univ.) SDM2022-42 ICD2022-10 |
This work presents a cryogenic digital-to-analog converter (DAC) for controlling a qubits in a large-scale quantum compu... [more] |
SDM2022-42 ICD2022-10 pp.37-40 |
ICD, SDM, ITE-IST [detail] |
2022-08-09 11:05 |
Online |
|
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] |
SDM2022-46 ICD2022-14 pp.54-59 |
ICD, SDM, ITE-IST [detail] |
2020-08-07 09:30 |
Online |
Online |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6 |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] |
SDM2020-6 ICD2020-6 pp.25-30 |
QIT (2nd) |
2018-11-26 13:30 |
Tokyo |
The University of Tokyo |
[Poster Presentation]
A development of control hardware for quantum information processing Yutaka Tabuchi, Yutaka Takeda, Shingo Kono, Shuhei Tamate, Yasunobu Nakamura (RCAST, Univ. of Tokyo) |
A development of scalable electronic circuits are indispensable for scalable quantum information processing experiments ... [more] |
|
ED |
2016-12-19 14:40 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] |
ED2016-81 pp.7-12 |
ED |
2015-12-21 13:45 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] |
ED2015-92 pp.7-11 |
QIT (2nd) |
2015-05-26 14:20 |
Osaka |
Osaka University |
Development of a 17 GHz arbitrary waveform pulsed spectrometer for EPR quantum computation experiments at millikelvin temperatures Yung Szen Yap (Osaka Univ./UTM), Yutaka Tabuchi (RCAST, The University of Tokyo), Makoto Negoro, Akinori Kagawa, Masahiro Kitagawa (Osaka Univ.) |
High fidelity gate operations and initialization of qubits are important for quantum information processing experi... [more] |
|
SANE |
2013-12-02 15:30 |
Overseas |
VAST/VNSC(2nd Dec.) & Melia Hotel (3rd Dec), Hanoi, Vietnam |
Cryogenic CMOS analog switch for far-infrared image sensors Koichi Nagase (SOKENDAI), Takehiko Wada, Hirokazu Ikeda (JAXA), Yasuo Arai (KEK), Morifumi Ohno (AIST) SANE2013-89 |
We are developing far-infrared image sensors for astronomical observations. In far-infrared observations, detectors and ... [more] |
SANE2013-89 pp.105-108 |
MW, AP (Joint) |
2013-09-13 11:50 |
Tokyo |
NHK Science Tech. Research Lab. |
Experimental Results of 8 Elements Phased Array Antenna using Superconducting Receiving Module Hiroyuki Kayano, Tsuyoshi Kumamoto, Noritsugu Shiokawa, Tamio Kawaguchi, Kohei Nakayama, Mitsuyoshi Shinonaga (TOSHIBA) MW2013-95 |
We have proposed a 3 GHz band active phased array antenna with a high-sensitivity cryogenic receiving unit. The high-sen... [more] |
MW2013-95 pp.41-46 |
OPE, OFT |
2010-02-26 16:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Experimental Investigation of Optical Fiber Temperature Sensors at Cryogenic Temperatures and in High-magnetic Fields Yoshichika Tanaka, Masafumi Ogata, Ken Nagashima (RTRI), Shoji Adachi, Satoshi Matsuura, Yoshihiro Kumagai (Yokogawa Electric Corp.) OFT2009-91 OPE2009-232 |
The optical fibers have the characteristics of small heat invasion, high electric insulation, electromagnetic noiseproof... [more] |
OFT2009-91 OPE2009-232 pp.43-48 |
MW |
2009-11-19 14:55 |
Kagoshima |
Tanegashima |
Improvement in Capacity Performance of W-CDMA Systems Achieved through Cryogenic Receiver Front-End Kei Satoh, Yasunori Suzuki, Tetsuya Mimura, Shoichi Narahashi (NTT DOCOMO), Toshio Nojima (Hokkaido Univ.) MW2009-132 |
This paper presents an improvement in capacity performance of a wideband code division multiple access (W-CDMA) system r... [more] |
MW2009-132 pp.25-28 |
MW (Workshop) |
2009-08-20 - 2009-08-21 |
Overseas |
KMUTNB, Bangkok, Thailand |
DC I-V characteristics of cryogenically-cooled GaN HEMT amplifier employing blue-light illumination Yasunori Suzuki, Shoichi Narahashi (DOCOMO), Toshio Nojima (Hokudai) |
This paper experimentally investigates a 2-GHz band cryogenically-cooled gallium nitride high electron mobility transist... [more] |
|
MW, ED |
2009-01-16 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] |
ED2008-219 MW2008-184 pp.119-123 |