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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.)  R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| ED, CPM, LQE | 2021-11-25 13:05 |
Online | Online | [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) ED2021-19 CPM2021-53 LQE2021-31 |
(To be available after the conference date) [more] | ED2021-19 CPM2021-53 LQE2021-31 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 15:20 |
Online | Online | MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75 |
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] | ED2020-24 CPM2020-45 LQE2020-75 pp.91-94 |
| LQE, CPM, ED | 2017-12-01 14:45 |
Aichi | Nagoya Inst. tech. | Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79 |
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] | ED2017-66 CPM2017-109 LQE2017-79 pp.83-86 |
| SDM | 2017-11-09 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] | SDM2017-61 pp.1-4 |
| OCS, OPE, LQE | 2017-10-26 11:40 |
Kumamoto | Josaien, Sakuranobaba | MOVPE Growth for Mid Infrared Light Emitting and Detection Devices Masakazu Arai, Keita Yoshimoto, Yuya Yamagata, Yuki Fujiwara, Kakeru Takahashi (Univ. of Miyazaki), Takeshi Fujisawa (Hokkaido Univ.), Koji Maeda (Univ. of Miyazaki) OCS2017-40 OPE2017-72 LQE2017-45 |
Mid infrared wavelength has attracted for gas sensing and new band fiber optic devices. We developed MOVPE growth for Sb... [more] | OCS2017-40 OPE2017-72 LQE2017-45 pp.25-28 |
| OPE, LQE | 2016-06-17 13:15 |
Tokyo | Fabrication of GaInAsP laser using directly bonded InP/Si Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22 |
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] | OPE2016-12 LQE2016-22 pp.15-20 |
|
| ED, LQE, CPM | 2015-11-26 10:55 |
Osaka | Osaka City University Media Center | Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] | ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| LQE, OPE | 2015-06-19 13:25 |
Tokyo | Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2015-13 LQE2015-23 |
Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and inte... [more] | OPE2015-13 LQE2015-23 pp.15-20 |
|
| LQE, ED, CPM | 2014-11-27 11:25 |
Osaka | Critical thickness for phase separation in MOVPE-grown thick InGaN Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103 |
This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] | ED2014-75 CPM2014-132 LQE2014-103 pp.9-14 |
|
| SDM | 2014-10-17 11:10 |
Miyagi | Niche, Tohoku Univ. | Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices. We achieved to grow ... [more] |
SDM2014-91 pp.41-45 |
| ED, MW | 2014-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs tri-gate MOSFETs with MOVPE regrown source/drain Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2013-115 MW2013-180 pp.29-33 |
| CPM, LQE, ED | 2013-11-29 11:00 |
Osaka | Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 |
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] | ED2013-79 CPM2013-138 LQE2013-114 pp.71-74 |
|
| CPM, LQE, ED | 2013-11-29 11:25 |
Osaka | Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115 |
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] | ED2013-80 CPM2013-139 LQE2013-115 pp.75-78 |
|
| LQE, OPE | 2013-06-21 11:25 |
Tokyo | MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19 |
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] | OPE2013-9 LQE2013-19 pp.13-18 |
|
| ED, LQE, CPM | 2012-11-30 09:30 |
Osaka | Osaka City University | Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105 |
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] | ED2012-77 CPM2012-134 LQE2012-105 pp.51-54 |
| ED, LQE, CPM | 2012-11-30 14:05 |
Osaka | Osaka City University | Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113 |
AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] | ED2012-85 CPM2012-142 LQE2012-113 pp.93-96 |
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