| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 15:05 |
Osaka | Central Electric Club | Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)  SDM2016-67 ICD2016-35 |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] | SDM2016-67 ICD2016-35 pp.123-126 |
| SDM, ICD | 2015-08-25 11:45 |
Kumamoto | Kumamoto City | Threshold Voltage and Current Variability of Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2015-68 ICD2015-37 |
[more] | SDM2015-68 ICD2015-37 pp.59-62 |
| SDM, EID | 2014-12-12 10:00 |
Kyoto | Kyoto University | Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108 |
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] | EID2014-13 SDM2014-108 pp.1-6 |
| SDM, EID | 2014-12-12 10:15 |
Kyoto | Kyoto University | Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] | EID2014-14 SDM2014-109 pp.7-11 |
| SDM | 2013-12-13 16:40 |
Nara | NAIST | Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] | SDM2013-131 pp.91-96 |
| SDM, ED | 2013-02-27 17:20 |
Hokkaido | Hokkaido Univ. | Field-Assisted Self -Assembly Process of InAs nanowires Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) ED2012-136 SDM2012-165 |
Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been inves... [more] | ED2012-136 SDM2012-165 pp.43-46 |
| SDM | 2012-11-16 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST) SDM2012-108 |
We perform a series of molecular dynamics (MD) simulations to investigate the transport process of heat in a hotspot reg... [more] | SDM2012-108 pp.47-52 |
| SDM | 2012-06-21 15:55 |
Aichi | VBL, Nagoya Univ. | Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation -- Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) SDM2012-58 |
In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls i... [more] | SDM2012-58 pp.81-85 |
| SDM | 2011-12-16 16:20 |
Nara | NAIST | Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146 |
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] | SDM2011-146 pp.77-82 |
| SDM | 2011-11-11 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121 |
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] | SDM2011-121 pp.33-38 |
| SDM | 2010-12-17 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 |
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] | SDM2010-185 pp.1-6 |
| SDM | 2010-06-22 09:55 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2010-34 |
Process technology with atomic-scale precision is indispensable for fabrication of silicon nanowire MOSFETs. We present ... [more] | SDM2010-34 pp.5-10 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| SDM [detail] | 2008-11-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182 |
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] | SDM2008-182 pp.77-82 |
[Return to Top Page]