| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2023-07-31 15:10 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Investigation of MIM structure with ZrN electrode as Resistive Random Access Memory Toyoki Miura, Masaru Sato, Mayumi Takeyama (Kitami Institute)  CPM2023-14 |
In the rapidly advancing information society, higher performance nonvolatile memories are demanded. In such a situation,... [more] | CPM2023-14 pp.11-12 |
| SDM | 2022-11-11 09:30 |
Online | Online | [Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research) SDM2022-71 |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] | SDM2022-71 pp.32-39 |
| CPM | 2021-10-27 15:10 |
Online | Online | Characterization of HfO2 film for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B Takeyama (Kitami Inst. of Tech.) CPM2021-31 |
In recent years, resistive random access memory has been attracting attention because it can operate faster and consume ... [more] | CPM2021-31 pp.43-45 |
| ED, SDM, CPM | 2021-05-27 14:10 |
Online | Online | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) ED2021-3 CPM2021-3 SDM2021-14 |
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] | ED2021-3 CPM2021-3 SDM2021-14 pp.11-14 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| CPM | 2020-10-29 16:40 |
Online | Online | Preparation of low-temperature-deposited ZrO2 film applicable to RRAM Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21 |
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposit... [more] | CPM2020-21 pp.38-40 |
| MRIS, ITE-MMS | 2020-10-05 14:20 |
Online | Online | Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MRIS2020-3 |
In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the crit... [more] | MRIS2020-3 pp.12-15 |
| SDM, ED, CPM | 2019-05-16 16:15 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14 |
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] | ED2019-16 CPM2019-7 SDM2019-14 pp.29-34 |
| ICD | 2018-04-19 13:50 |
Tokyo | [Invited Talk]
Hard- and Soft- Synchronized Developments of Resistive Analog Neuro Devices and Systems Hiroyuki Akinaga, Hisashi Shima, Yasuhisa Naitoh (AIST), Tetsuya Asai (Hokkaido Univ.) ICD2018-5 |
Artificial Neural Network (ANN) System for Inference has attracted increasing attention. As widely known, Resistive Ana... [more] | ICD2018-5 p.15 |
|
| CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] | 2018-03-08 13:55 |
Shimane | Okinoshima Bunka-Kaikan Bldg. | CPSY2017-146 DC2017-102 |
Resistive RAM (ReRAM) is one of the most promising memory technologies due to its property such as high density, low-pow... [more] | CPSY2017-146 DC2017-102 pp.257-262 |
| MBE, NC, NLP (Joint) |
2018-01-27 11:45 |
Fukuoka | Kyushu Institute of Technology | Neural Pulse Coding using ReRAM-based Neuron Devices Kazuki Nakada (Hiroshima City Univ.) NLP2017-98 |
Researches on hardware implementation of neuromorphic systems and machine learning algorithms are steadily progressing. ... [more] | NLP2017-98 pp.63-68 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2017-11-07 09:25 |
Kumamoto | Kumamoto-Kenminkouryukan Parea | Routing method considering programming constraint of reconfigurable device using via-switch crossbars Kosei Yamaguchi, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2017-39 DC2017-45 |
This report proposes a new routing method that considers constraint on the programming of switches in the reconfigurable... [more] | VLD2017-39 DC2017-45 pp.73-78 |
| SDM, EID | 2016-12-12 13:45 |
Nara | NAIST | Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
[more] | |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-30 14:35 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) CPM2016-89 ICD2016-50 IE2016-84 |
Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low... [more] | CPM2016-89 ICD2016-50 IE2016-84 pp.69-74 |
| ICD | 2016-04-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
A 7T-SRAM with Data-Write Technique by Capacitive Coupling Daisaburo Takashima, Masato Endo (Toshiba), Kazuhiro Shimazaki, Manabu Sai (Toshiba Microelectronics), Masaaki Tanino (Toshia Information Systems) ICD2016-2 |
A 7T-SRAM, in which cell data is written by capacitive coupling, is proposed. The elimination of current-drive in read/w... [more] | ICD2016-2 pp.7-12 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| ICD | 2016-04-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
A 0.6V Operation ReRAM Program Voltage Generator with Adaptively Optimized Comparator Bias-Current for Batteryless IoT Local Device Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Ken Takeuchi (Chuo Univ.) ICD2016-6 |
Resistive RAM (ReRAM) is considered as candidates for batteryless IoT local device because of the low voltage and low po... [more] | ICD2016-6 pp.27-32 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2015-12-01 14:40 |
Nagasaki | Nagasaki Kinro Fukushi Kaikan | On discrimination method of a resistive open using delay variation induced by signal transitions on adjacent lines Kotaro Ise, Hiroyuki Yotsuyanagi, Masaki Hashizume (Tokushima Univ.), Yoshinobu Higami, Hiroshi Takahashi (Ehime Univ.) VLD2015-42 DC2015-38 |
The effect of a resistive open results in small delay in an IC. It is difficult to test small delay since signal delay a... [more] | VLD2015-42 DC2015-38 pp.31-36 |
| SDM | 2015-06-19 13:20 |
Aichi | VBL, Nagoya Univ. | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] | SDM2015-46 pp.41-45 |
| SDM | 2015-06-19 15:50 |
Aichi | VBL, Nagoya Univ. | Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] | SDM2015-52 pp.75-80 |
[Return to Top Page]