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 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] 2012-01-27
09:25		 Osaka Osaka Univ. Convention Center Design of crossed cavity-resonator-integrated guided-mode resonance filter
Tatsuya Majima, Junichi Inoue, Koji Hatanaka (KIT), Kenji Kintaka (AIST), Kenzo Nishio, Yasuhiro Awatsuji, Shogo Ura (KIT) PN2011-66 OPE2011-182 LQE2011-168 EST2011-116 MWP2011-84		 Cavity-resonator-integrated guided-mode resonance filter (CRIGF) is expected to provide high reflectance and narrow-band... [more] PN2011-66 OPE2011-182 LQE2011-168 EST2011-116 MWP2011-84
pp.247-251
CPM, SDM, ED 2011-05-20
15:40		 Aichi Nagoya Univ. (VBL) Fabrication of non-polar a-plane nitride based solar cells
Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-32 CPM2011-39 SDM2011-45		 n this study, we fabricated and charactrized nitride-based solar cells on a non-polar a-plane GaN template on an r-plane... [more] ED2011-32 CPM2011-39 SDM2011-45
pp.163-167
CPM, SDM, ED 2011-05-20
16:40		 Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47		 We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
ED, SDM 2010-02-22
14:50		 Okinawa Okinawaken-Seinen-Kaikan MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197		 We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] ED2009-200 SDM2009-197
pp.23-28
ED 2008-12-20
09:40		 Miyagi Tohoku Univ. Efficient and polarization controled terahertz wave generation from GaP waveguide structures
Kyosuke Saito, Kei Nozawa, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.), Tetsuo Sasaki, Jun-ichi Nishizawa (TMU) ED2008-192		 We have fabricated GaP waveguides such as slab, rib, and photonic crystal waveguides with the core size of terahertz (TH... [more] ED2008-192
pp.39-42
LQE, ED, CPM 2008-11-27
11:45		 Aichi Nagoya Institute of Technology Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE
Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) ED2008-157 CPM2008-106 LQE2008-101		 In this study, we report the growth and characterization of M-plane InN films on LiAlO2 (100) substrates by radio-freque... [more] ED2008-157 CPM2008-106 LQE2008-101
pp.25-28
ED 2007-11-28
10:45		 Miyagi Tohoku Univ. Research Institute of Electrical Communication Efficient terahertz-wave generation from GaP waveguide structures
Kyosuke Saito, Kei Nozawa, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.), Tomoyuki Kimura, Ken Suto, Tetsuo Sasaki, Jun-ichi Nishizawa (Semiconductor Research Inst.) ED2007-199		 We have fabricated various kinds of GaP waveguides such as slab, rib, rod-type, and photonic crystal waveguides with the... [more] ED2007-199
pp.67-72
ED 2007-11-28
11:10		 Miyagi Tohoku Univ. Research Institute of Electrical Communication CW THz wave generation implemented with semiconductor laser excitation
Tadao Tanabe, Srinivasa Ragam, Yutaka Oyama (Tohoku Univ.), Tetsuo Sasaki, Jun-ichi Nishizawa, Ken Suto (Semiconductor Research Inst.) ED2007-200		 We have developed widely frequency-tunable CW Terahertz (THz)-wave generators using a non-collinear phase-matched differ... [more] ED2007-200
pp.73-76
CPM, ED, LQE 2007-10-12
09:25		 Fukui Fukui Univ. Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67		 GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] ED2007-166 CPM2007-92 LQE2007-67
pp.53-56
 Results 1 - 9 of 9  /   
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