Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2008-1
[Invited Talk]
Location control of super lateral growth in excimer laser crystallization of Si film by micro-melt seeding method
Wenchang Yeh, Hanseng Dai, Hsinchi Chen, Bingcyun Chen (NTUST)
pp. 1 - 6
SDM2008-2
[Invited Talk]
Study of Application of compressible Flow and Shock Wave to PLA
Minoru Yaga, Hiroshi Fukuoka, Hideki Mine (Univ. of the Ryukyus), Toshio Takiya (Hitachi Zosen)
pp. 7 - 12
SDM2008-3
Looking into poly-Si films from TFT characteristics
Tadashi Serikawa (Osaka Univ.)
pp. 13 - 16
SDM2008-4
Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN)
pp. 17 - 22
SDM2008-5
Investigation on Characteristic Variation of Polycrystalline-Si Thin Film Transistor Having Stripe Channels
Koji Akiyama, Kazunori Watanabe, Tanemasa Asano (Graduate school, Kyushu Univ.)
pp. 23 - 26
SDM2008-6
Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy
Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus)
pp. 27 - 32
SDM2008-7
Application of Si Thin-Film to Photo-Sensor Device
Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays)
pp. 33 - 36
SDM2008-8
Clarification of ITO/AlNiNd contact formation mechanism
Kazumasa Kawase, Tsukasa Motoya, Junji Tanimura (Mitsubishi Electric Corp.), Naoki Tsumura (メルコ・ディスプレイ・テクノロジ), Kensuke Nagayama (メルコ・ディスプレイ・テクノロジー), Nobuaki Ishiga (メルコ・ディスプレイ・テクノロジ), Kazunori Inoue (Mitsubishi Electric Corp.)
pp. 37 - 40
SDM2008-9
Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant
Tomihiro Sonegawa, Kazuhiro Uehara, Takehiro Maehama (Univ. of the Ryukyus)
pp. 41 - 46
SDM2008-10
Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors
Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology)
pp. 47 - 50
SDM2008-11
Oxide-channel thin film transistors with ferroelectric and high-k gate insulators
Eisuke Tokumitsu, Hiroshi Shibata, Tomohiro Oiwa, Yohei Kondo (Tokyo Tech)
pp. 51 - 56
SDM2008-12
[Invited Talk]
Structure and Field-effect Transistor Characteristics of Organic Semiconductors
Reiko Azumi, Masayuki Chikamatsu, Yuji Yoshida, Kiyoshi Yase (PRI, AIST)
pp. 57 - 60
SDM2008-13
Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing
Akira Heya, Masahiko Sato, Hiroshi Hasegawa, Naoto Matsuo (Univ. of Hyogo)
pp. 61 - 66
SDM2008-14
Device simulation on organic TFT
-- Dependence on structures --
Chang-Hoon Shim, Reiji Hattori, Fumito Maruoka (Kyushu Univ.)
pp. 67 - 72
SDM2008-15
[Invited Talk]
Control of microstructures of Si bulk muticrystals for improvement of solar cell performance
Noritaka Usami, Kozo Fujiwara, Kentaro Kutsukake, Kazuo Nakajima (IMR, Tohoku Univ.)
pp. 73 - 76
SDM2008-16
[Invited Talk]
Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film
Masaru Itakura, Masanobu Miyao (Kyushu Univ.)
pp. 77 - 82
SDM2008-17
Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor
Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.)
pp. 83 - 88
SDM2008-18
Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei
Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.)
pp. 89 - 94
SDM2008-19
Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization
Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.)
pp. 95 - 100
SDM2008-20
Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization
Takashi Hagihara, Kaoru Toko, Taizoh Sadoh (Kyushu Univ.)
pp. 101 - 106
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.