Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-26
Material properties of Ge - Comparison with Silicon
Kohei M. Itoh (Keio Univ.)
pp. 1 - 2
SDM2009-27
Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface --
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.)
pp. 3 - 8
SDM2009-28
First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.)
pp. 9 - 13
SDM2009-29
Fundamental Study on GeO2/Ge Interface and its Electrical Properties
Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.)
pp. 15 - 20
SDM2009-30
Electrical Properties of Ge MIS Interface Defects
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo)
pp. 21 - 26
SDM2009-31
Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption --
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA)
pp. 27 - 31
SDM2009-32
Fermi Level Pinning at Metal/Germanium Interface and its Controllability
Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST)
pp. 33 - 38
SDM2009-33
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)
pp. 39 - 44
SDM2009-34
Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical
Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)
pp. 45 - 50
SDM2009-35
Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.)
pp. 51 - 56
SDM2009-36
Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes
Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 57 - 60
SDM2009-37
Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge
Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.)
pp. 61 - 66
SDM2009-38
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete)
pp. 67 - 70
SDM2009-39
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.)
pp. 71 - 76
SDM2009-40
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric
Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST)
pp. 77 - 80
SDM2009-41
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3.
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)
pp. 81 - 85
SDM2009-42
Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx
Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 87 - 92
SDM2009-43
Theoretical investigation about electronic structure of doping metal silicide
Shinichi Sotome, Takashi Nakayama (Chiba Univ)
pp. 93 - 97
SDM2009-44
Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface
Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University)
pp. 99 - 103
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.