Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2009-50
[Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.)
pp. 1 - 4
ED2009-51
[Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.)
pp. 5 - 8
ED2009-52
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
pp. 9 - 12
ED2009-53
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
pp. 13 - 16
ED2009-54
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System.
Jae-Young Park, Jong-Kyu Song, Dae-Woo Kim, Chang-Soo Jang, Won-Young Jung, Taek-Soo Kim (Dongbu HiTek)
pp. 17 - 20
ED2009-55
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.)
pp. 21 - 24
ED2009-56
A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology
Seung-Woo Seo, Jae-Sung Rieh (Korea Univ.)
pp. 25 - 28
ED2009-57
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Syunichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 29 - 32
ED2009-58
A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver
Jeongjun Lee, Jikyung Jeong, Jinwook Burm (Sogang University)
pp. 33 - 36
ED2009-59
A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication
Jikyung Jeong, Jeongjun Lee, Jinwook Burm (Sogang University)
pp. 37 - 40
ED2009-60
Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects
Sadaharu Ito, Michihiko Suhara (Tokyo Metro Univ.)
pp. 41 - 46
ED2009-61
[Invited Talk]
Metrology of microscopic properties of graphene on SiC
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL)
pp. 47 - 52
ED2009-62
[Invited Talk]
Theoretical study on graphene field-effect transistors
Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST)
pp. 53 - 58
ED2009-63
Electrical characteristics of OFETs with thin gate dielectric
Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.)
pp. 59 - 62
ED2009-64
Design of 30nm FinFET with Halo Structure
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST)
pp. 63 - 66
ED2009-65
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier.
Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.)
pp. 67 - 70
ED2009-66
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump
Lijing Qiu (Kyushu Univ.), Naoya Watanabe (Fukuoka-IST), Tanemasa Asano (Kyushu Univ.)
pp. 71 - 74
ED2009-67
A new Combination of RSD and Inside Spacer Thin Film Transistor
M. J. Chang, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.)
pp. 75 - 78
ED2009-69
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
Jin Kwan Kim (KAIST), Keedong Yang (i3system Conp.), Yong Soo Lee (KAIST), Hee Chul Lee (KAIST/National Nanofab Center)
pp. 83 - 86
ED2009-70
[Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors
Masaaki Kuzuhara (Univ. of Fukui)
pp. 87 - 92
ED2009-71
[Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.)
pp. 93 - 98
ED2009-72
[Invited Talk]
InGaAs/InP MISFET with epitaxially grown source
Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 99 - 103
ED2009-73
4H-SiC Avalanche Photodiodes for 280 nm UV Detection.
B. R. Park, H. Sung, Chun-Hyung Cho (Hongik Univ.), P. M. Sandvik (GE), Ho-Young Cha (Hongik Univ.)
pp. 105 - 108
ED2009-74
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition
Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.)
pp. 109 - 112
ED2009-75
InP Gunn diodes with shallow-barrier Schottky contacts.
M. R. Kim, J. K. Rhee, S. D. Lee, Y. S. Chae, S. K. Sharma, A. Kathalingam, C. W. Lee, H. J. Lim (Dongguk Univ.), J. H. Choi, W. J. Kim (Agency for Defense Development)
pp. 113 - 116
ED2009-76
Formation and application of InP porous structures on p-n substrates
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.)
pp. 117 - 120
ED2009-77
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer
Y. J. Chen, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.)
pp. 121 - 124
ED2009-78
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
Seiya Kasai (Hokkaido Univ./PRESTO JST), Tetsuya Asai, Yuta Shiratori, Daisuke Nakata (Hokkaido Univ.)
pp. 125 - 128
ED2009-79
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 129 - 132
ED2009-80
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
Toshihiro Itoh, Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata (NTT)
pp. 133 - 136
ED2009-81
Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces
J. H. Ahn (Korea University), J. H. Lee, T. W. Koo (Sungkyunkwan Univ/Korea University), M. G. Kang (Korea University), D. M. Whang (Sungkyunkwan Univ/Korea University), S. W. Hwang (Korea University)
pp. 137 - 140
ED2009-82
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN
Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki)
pp. 141 - 144
ED2009-83
[Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.)
pp. 145 - 148
ED2009-84
[Invited Talk]
MOS Transistors fabricated on Si(551) surface based on radical reaction processes
Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 149 - 152
ED2009-85
Effective Annealing for Si film
Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus)
pp. 153 - 156
ED2009-86
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)
pp. 157 - 160
ED2009-87
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 161 - 164
ED2009-88
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
C. H. Cho, H. Y. Cha (Hongik Univ.)
pp. 165 - 168
ED2009-89
Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST)
pp. 169 - 172
ED2009-90
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST)
pp. 173 - 176
ED2009-91
[Invited Talk]
Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.)
pp. 177 - 180
ED2009-92
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki (Hiroshima Univ.)
pp. 181 - 184
ED2009-93
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.)
pp. 185 - 188
ED2009-94
Fabrication of double-dot single-electron transistor in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.)
pp. 189 - 192
ED2009-95
[Invited Talk]
Future High Density Memory with Vertical Structured Device Technology
Tetsuo Endoh (Tohoku Univ.)
pp. 193 - 196
ED2009-96
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.)
pp. 197 - 200
ED2009-97
Architecture and verification of the row chain cell array for polymer random access memory
Jung ha Kim, Chang yong Ahn, Sang sun Lee (Hanyang Univ.)
pp. 201 - 204
ED2009-98
Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers.
H. W. Kim, D. H. Kim, J. H. You, T. W. Kim (Hanyang Univ.)
pp. 205 - 208
ED2009-99
Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time
Woojun Lee, Woo Young Choi (Sogang Univ.)
pp. 209 - 212
ED2009-100
Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions
J. W. Lee, J. H. You, S. H. Jang, K. D. Kwack, T. W. Kim (Hanyang Univ.)
pp. 213 - 217
ED2009-101
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device.
Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
pp. 219 - 222
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.