Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2014-108
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 1 - 6
SDM2014-109
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 7 - 11
SDM2014-110
Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo)
pp. 13 - 16
SDM2014-111
Conduction mechanism and Charge retention mechanism for DNA memory transistor
Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ)
pp. 17 - 20
SDM2014-112
Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment)
pp. 21 - 24
SDM2014-113
Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity
Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST)
pp. 25 - 29
SDM2014-114
Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell
Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST)
pp. 31 - 35
SDM2014-115
Micro-Wall Solar Cell with Electric-Field Effect
Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo)
pp. 37 - 40
SDM2014-116
Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs
Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)
pp. 41 - 44
SDM2014-117
Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors
Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 45 - 50
SDM2014-118
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)
pp. 51 - 54
SDM2014-119
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 55 - 59
SDM2014-120
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.)
pp. 61 - 65
SDM2014-121
Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing
Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 67 - 71
SDM2014-122
Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device
Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan)
pp. 73 - 77
SDM2014-123
Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 79 - 82
SDM2014-124
Effect of deposition conditions on the properties of IGZO thin film
Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 83 - 87
SDM2014-125
Characterization of the touch panel circuit using ITZO TFTs
Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.)
pp. 89 - 93
SDM2014-126
Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control
Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.)
pp. 95 - 98
SDM2014-127
Formation of nc-Si in SiOx by Soft X-ray Irradiation
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)
pp. 99 - 102
SDM2014-128
Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs
Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)
pp. 103 - 107
SDM2014-129
Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements
Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)
pp. 109 - 113
SDM2014-130
Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)
pp. 115 - 118
SDM2014-131
Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation
Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 119 - 123
SDM2014-132
Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
pp. 125 - 128
SDM2014-133
Resistive switching characteristics of NiO-based ReRAM after semi-forming process.
Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)
pp. 129 - 134
SDM2014-134
Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
pp. 135 - 138
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.