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Technical Committee on Organic Molecular Electronics (OME) (Searched in: 2008)
Search Results: Keywords 'from:2008-04-11 to:2008-04-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2008-04-11 09:00 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Location control of super lateral growth in excimer laser crystallization of Si film by micro-melt seeding method Wenchang Yeh, Hanseng Dai, Hsinchi Chen, Bingcyun Chen (NTUST)  SDM2008-1 OME2008-1 |
[more] | SDM2008-1 OME2008-1 pp.1-6 |
| SDM, OME | 2008-04-11 09:30 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Study of Application of compressible Flow and Shock Wave to PLA Minoru Yaga, Hiroshi Fukuoka, Hideki Mine (Univ. of the Ryukyus), Toshio Takiya (Hitachi Zosen) SDM2008-2 OME2008-2 |
The unsteady behavior of flow driven by a jet suddenly injected into a cell is numerically studied by solving the axisym... [more] | SDM2008-2 OME2008-2 pp.7-12 |
| SDM, OME | 2008-04-11 10:00 |
Okinawa | Okinawa Seinen Kaikan | Looking into poly-Si films from TFT characteristics Tadashi Serikawa (Osaka Univ.) SDM2008-3 OME2008-3 |
Poly-Si TFTs were fabricated from sputtered Si film crystallized by irradiation of Ar-laser at various powers. Electrica... [more] | SDM2008-3 OME2008-3 pp.13-16 |
| SDM, OME | 2008-04-11 10:35 |
Okinawa | Okinawa Seinen Kaikan | Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4 |
After UV pulsed excimer laser annealing for highly boron-, or phosphorus dosed Si film, the relationship between the c... [more] |
SDM2008-4 OME2008-4 pp.17-22 |
| SDM, OME | 2008-04-11 11:00 |
Okinawa | Okinawa Seinen Kaikan | Investigation on Characteristic Variation of Polycrystalline-Si Thin Film Transistor Having Stripe Channels Koji Akiyama, Kazunori Watanabe, Tanemasa Asano (Graduate school, Kyushu Univ.) SDM2008-5 OME2008-5 |
Thin Film Transistors (TFTs) having strip channels were fabricated on laterally grown polycrystalline silicon film prepa... [more] | SDM2008-5 OME2008-5 pp.23-26 |
| SDM, OME | 2008-04-11 11:25 |
Okinawa | Okinawa Seinen Kaikan | Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) SDM2008-6 OME2008-6 |
Low temperature polysilicon (LTPS) thin film is a key material for the systems-on-glass achievement. Depth and in-plane ... [more] | SDM2008-6 OME2008-6 pp.27-32 |
| SDM, OME | 2008-04-11 11:50 |
Okinawa | Okinawa Seinen Kaikan | Application of Si Thin-Film to Photo-Sensor Device Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays) SDM2008-7 OME2008-7 |
In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and i... [more] | SDM2008-7 OME2008-7 pp.33-36 |
| SDM, OME | 2008-04-11 13:15 |
Okinawa | Okinawa Seinen Kaikan | Clarification of ITO/AlNiNd contact formation mechanism Kazumasa Kawase, Tsukasa Motoya, Junji Tanimura (Mitsubishi Electric Corp.), Naoki Tsumura (メルコ・ディスプレイ・テクノロジ), Kensuke Nagayama (メルコ・ディスプレイ・テクノロジー), Nobuaki Ishiga (メルコ・ディスプレイ・テクノロジ), Kazunori Inoue (Mitsubishi Electric Corp.) SDM2008-8 OME2008-8 |
The chemical bonding state, crystallized state and element distribution near ITO/AlNiNd interface are investigated. In t... [more] | SDM2008-8 OME2008-8 pp.37-40 |
| SDM, OME | 2008-04-11 13:40 |
Okinawa | Okinawa Seinen Kaikan | Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant Tomihiro Sonegawa, Kazuhiro Uehara, Takehiro Maehama (Univ. of the Ryukyus) SDM2008-9 OME2008-9 |
Low-k dielectric thin film material have been successfully prepared by thermal oxidization using anodized silicon. Anodi... [more] | SDM2008-9 OME2008-9 pp.41-46 |
| SDM, OME | 2008-04-11 14:05 |
Okinawa | Okinawa Seinen Kaikan | Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10 |
We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] | SDM2008-10 OME2008-10 pp.47-50 |
| SDM, OME | 2008-04-11 14:30 |
Okinawa | Okinawa Seinen Kaikan | Oxide-channel thin film transistors with ferroelectric and high-k gate insulators Eisuke Tokumitsu, Hiroshi Shibata, Tomohiro Oiwa, Yohei Kondo (Tokyo Tech) SDM2008-11 OME2008-11 |
(To be available after the conference date) [more] | SDM2008-11 OME2008-11 pp.51-56 |
| SDM, OME | 2008-04-11 15:10 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Structure and Field-effect Transistor Characteristics of Organic Semiconductors Reiko Azumi, Masayuki Chikamatsu, Yuji Yoshida, Kiyoshi Yase (PRI, AIST) SDM2008-12 OME2008-12 |
Molecular packing and orientation with respect to a substrate and/or electrodes are key factors that affect the electric... [more] | SDM2008-12 OME2008-12 pp.57-60 |
| SDM, OME | 2008-04-11 15:40 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
In situ observation of absorption spectra of proteins on solid/liquid interfaces by using slab optical waveguide spectroscopy Naoki Matsuda, Yusuke Ayato, Masayoshi Matsui (AIST) |
[more] | |
| SDM, OME | 2008-04-11 16:10 |
Okinawa | Okinawa Seinen Kaikan | Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing Akira Heya, Masahiko Sato, Hiroshi Hasegawa, Naoto Matsuo (Univ. of Hyogo) SDM2008-13 OME2008-13 |
We tried to improve electrical properties of organic thin-film transistors (OTFTs) by atomic hydrogen annealing (AHA). ... [more] | SDM2008-13 OME2008-13 pp.61-66 |
| SDM, OME | 2008-04-11 16:35 |
Okinawa | Okinawa Seinen Kaikan | Device simulation on organic TFT
-- Dependence on structures -- Chang-Hoon Shim, Reiji Hattori, Fumito Maruoka (Kyushu Univ.) SDM2008-14 OME2008-14 |
We carried out 2-D device simulation of Organic Thin Film Transistor (OTFT) characteristics and showed the difference be... [more] | SDM2008-14 OME2008-14 pp.67-72 |
| SDM, OME | 2008-04-12 09:00 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Control of microstructures of Si bulk muticrystals for improvement of solar cell performance Noritaka Usami, Kozo Fujiwara, Kentaro Kutsukake, Kazuo Nakajima (IMR, Tohoku Univ.) SDM2008-15 OME2008-15 |
[more] | SDM2008-15 OME2008-15 pp.73-76 |
| SDM, OME | 2008-04-12 09:30 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film Masaru Itakura, Masanobu Miyao (Kyushu Univ.) SDM2008-16 OME2008-16 |
Microstructures of Si_{0.6}Ge_{0.4} films were investigated by using a transmission electron microscopy (TEM) in order t... [more] | SDM2008-16 OME2008-16 pp.77-82 |
| SDM, OME | 2008-04-12 10:00 |
Okinawa | Okinawa Seinen Kaikan | Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2008-17 OME2008-17 |
Concentrations and mobilities of intrinsic holes in poly-Ge films grown on quartz substrates were investigated. The Hall... [more] | SDM2008-17 OME2008-17 pp.83-88 |
| SDM, OME | 2008-04-12 10:35 |
Okinawa | Okinawa Seinen Kaikan | Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) SDM2008-18 OME2008-18 |
Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We hav... [more] | SDM2008-18 OME2008-18 pp.89-94 |
| SDM, OME | 2008-04-12 11:00 |
Okinawa | Okinawa Seinen Kaikan | Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.) SDM2008-19 OME2008-19 |
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was inves... [more] | SDM2008-19 OME2008-19 pp.95-100 |
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