| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2014-12-12 17:15 |
Kyoto | Kyoto University | Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)  EID2014-37 SDM2014-132 |
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] | EID2014-37 SDM2014-132 pp.125-128 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
| CAS, SIP, MSS, VLD, SIS [detail] | 2014-07-11 13:40 |
Hokkaido | Hokkaido University | Write Reduction of Internal Registers for Non-volatile RISC Processors Tomoya Goto, Masao Yanagisawa, Shinji Kimura (Waseda Univ.) CAS2014-40 VLD2014-49 SIP2014-61 MSS2014-40 SIS2014-40 |
Recently next-generation non-volatile memories based on MTJ (Magnetic Tunnel Junction) have been paid attention because ... [more] | CAS2014-40 VLD2014-49 SIP2014-61 MSS2014-40 SIS2014-40 pp.213-218 |
| SDM | 2014-06-19 15:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57 |
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] | SDM2014-57 pp.75-78 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| ICD | 2014-01-29 13:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Invited Talk]
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories Koh Johguchi (Chuo Univ.) ICD2013-135 |
Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, sol... [more] | ICD2013-135 p.83 |
| SDM | 2013-06-18 14:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | SiC Electric-Field-Induced Resistive Nonvolatile Memory
-- MIS and pn-Diode Type Memories -- Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.) SDM2013-57 |
We have proposed two types of metal/tunneling oxide layer/SiOx electron trap layer/n-SiC/n-Si (MIS) and p-type oxide sem... [more] | SDM2013-57 pp.67-70 |
| DC | 2013-02-13 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristic Analysis of Signal Delay for Resistive Open Fault Detection Hiroto Ohguri, Hiroyuki Yotsuyanagi, Masaki Hashizume (Univ. of Tokushima), Toshiyuki Tsutsumi, Koji Yamazaki (Meiji Univ.), Yoshinobu Higami, Hiroshi Takahashi (Ehime Univ.) DC2012-84 |
When a resistive open fault occurs, signal delay at the faulty wire may degrade circuit performance. However, a resistiv... [more] | DC2012-84 pp.25-30 |
| SDM | 2011-07-04 16:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67 |
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] | SDM2011-67 pp.97-102 |
| NC, MBE (Joint) |
2011-03-07 15:00 |
Tokyo | Tamagawa University | A vision sensor with multiple spatial band-pass filtering Shinsuke Yasukawa, Hirotsugu Okuno, Tetsuya Yagi (Osaka Univ.) NC2010-139 |
A vision sensor with multiple spatial band-pass filtering has been developed. The vision sensor is comprised of an activ... [more] | NC2010-139 pp.71-76 |
| EMCJ, IEE-EMC | 2010-12-10 15:35 |
Aichi | Chukyo Univ. Toyoda Campus | A Study on a Thin Wave Absorber for Microwave Band Using Closely Placed Divided Conductive Films and Resistive Films Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.) EMCJ2010-96 |
In this paper, a thin wave absorber using closely placed divide conductive film and resistive film is proposed and exami... [more] | EMCJ2010-96 pp.87-92 |
| NC | 2010-10-23 14:30 |
Fukuoka | Kyushu Inst. Tech. (Kitakyushu Sci. and Res. Park) | A ReRAM-based Analog Synaptic Device exhibiting Spike-Timing-Dependent Plasticity Nobuo Akou, Tetsuya Asai (Hokkaido Univ.), Takeshi Yanagida, Tomoji Kawai (Osaka Univ.), Yoshihito Amemiya (Hokkaido Univ.) NC2010-46 |
We propose a STDP synaptic device that employs a resistive RAM (ReRAM). The device is a CMOS-ReRAM-hybrid circuit that c... [more] | NC2010-46 pp.23-28 |
| ITE-MMS, MRIS | 2010-10-14 16:15 |
Akita | Akita Research and Development Center | Fabrication of L10-FePt based TMR multilayer using Fe(PdxPt1-x) with tunable perpendicular magnetic anisotropy for spin torque transfer MRAM application Shogo Omiya, Satoru Yoshimura, Genta Egawa, Hitoshi Saito (Akita Univ.) MR2010-27 |
We have succeeded in fabrication of highly ordered L10-Fe(Pd,Pt) film with tunable perpendicular magnetic anisotropy. T... [more] |
MR2010-27 pp.31-36 |
| SDM | 2010-06-22 17:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Resistive Memory utilizing Ferritin Protein with Nano Particle
-- Control of a Current Path using Metal Nano Particle -- Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48 |
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] | SDM2010-48 pp.85-88 |
| SDM, ED | 2009-06-24 15:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47 |
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] | ED2009-52 SDM2009-47 pp.9-12 |
| SDM, ED | 2009-06-24 15:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] | ED2009-53 SDM2009-48 pp.13-16 |
| AP | 2008-10-16 14:50 |
Miyagi | Tohoku Gakuin University | Characteristics of Resistively Loaded Print Monopole Antenna for UWB Applications Koji Kanemoto, Takayuki Sasamori, Teruo Tobana, Yoji Isota (Akita Pref. Univ.) AP2008-98 |
In this paper, a resistively loaded print monopole antenna is developed for UWB applications. First, to fabricate the re... [more] | AP2008-98 pp.23-28 |
| SDM | 2007-03-15 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.) |
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] | SDM2006-255 pp.7-10 |
| SDM | 2007-03-15 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | SiO2/SiOx/SiC/Si MIS Resistive Nonvolatile Memory Yoshiyuki Suda, Hiromi Hasegawa (Tokyo Univ. of Agric. & Technol.) |
We have recently proposed a SiO2/SiOx/SiC/Si MIS resistive nonvolatile RAM (RRAM) of a new structure. This memory has a ... [more] | SDM2006-256 pp.11-14 |
| ICD | 2005-04-15 10:30 |
Fukuoka | A 1.2V 1Mbit Embedded MRAM Core with Folded Bit-Line Array Architecture Takaharu Tsuji (Renesas Technorogy), Hiroaki Tanizaki (Renesas Device Design), Masatoshi Ishikawa, Jun Otani, Yuichiro Yamaguchi, Shuichi Ueno, Tsukasa Oishi, Hideto Hidaka (Renesas Technorogy) |
A 1Mbit MRAM with a 0.81um2 1-Transistor 1-Magnetic Tunnel Junction (1T-1MTJ) cell using 0.13um 4LM logic technology has... [more] | ICD2005-13 pp.1-6 |
|
[Return to Top Page]