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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD | 2017-03-01 14:25 |
Okinawa | Okinawa Seinen Kaikan | A Nonvolatile Flip-Flop Circuit with a Split Store/Restore Architecture for Power Gating Masaru Kudo, Kimiyoshi Usami (Shibaura Institute of Tech.)  VLD2016-103 |
This paper describes a nonvolatile Flip-Flop (NVFF) circuit to implement Nonvolatile Power Gating. We proposed a new NVF... [more] | VLD2016-103 pp.7-12 |
| SDM | 2016-10-27 11:15 |
Miyagi | Niche, Tohoku Univ. | Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76 |
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] | SDM2016-76 pp.39-44 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 11:25 |
Osaka | Central Electric Club | [Invited Talk]
A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device
-- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits -- Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31 |
Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-per... [more] | SDM2016-63 ICD2016-31 pp.99-103 |
| ED | 2016-07-23 15:30 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-30 |
We have previously proposed a two-terminal resistive nonvolatile p-Cu2O/SiCxOy(an electron-trapping layer)/n-SiC/n-Si-st... [more] | ED2016-30 pp.17-20 |
| SDM, OME | 2016-04-09 09:30 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
Nonvolatile Memory Applications Using Oxide Thin-Film Transistors Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.) SDM2016-12 OME2016-12 |
The embeddable nonvolatile memory devices with such characteristics as mechanical flexibility and/or transparency to the... [more] | SDM2016-12 OME2016-12 pp.49-52 |
| SDM | 2015-10-29 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba) SDM2015-75 |
Novel nonvolatile programmable switch for low-power and high-speed FPGA where flash memory is adjacently integrated to C... [more] | SDM2015-75 pp.23-28 |
| ICD | 2015-04-17 10:50 |
Nagano | [Invited Talk]
A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto (SEL), Masahiro Fujita (The Univ. of Tokyo), Jun Koyama, Shunpei Yamazaki (SEL) ICD2015-9 |
A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystall... [more] | ICD2015-9 pp.39-44 |
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| ICD, SDM | 2014-08-05 11:15 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Low-Power and High-Speed Nonvolatile FPGA by Adjacent Integration of MONOS/Logic and Novel Programming Scheme Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinobu Fujita, Shinichi Yasuda (Toshiba) SDM2014-75 ICD2014-44 |
Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CM... [more] | SDM2014-75 ICD2014-44 pp.71-76 |
| SDM | 2014-06-19 13:25 |
Aichi | VBL, Nagoya Univ. | Low Temperature Fabrication Processes for p-Cu2O/SiOx/n-SiC structured pn memory diode Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. & Tech.) SDM2014-51 |
We have studied low-temperature fabrication processes for our previously proposed two-terminal resistive nonvolatile p-... [more] |
SDM2014-51 pp.43-47 |
| ICD | 2014-04-17 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine Shoun Matsunaga (Tohoku Univ.), Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi (NEC), Masanori Natsui, Akira Mochizuki, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2014-8 |
We demonstrate a 1-Mb nonvolatile TCAM-based search engine using 90-nm CMOS and perpendicular MTJ technologies for an ul... [more] | ICD2014-8 pp.39-44 |
| ICD | 2014-04-18 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop Hiroki Koike (Tohoku Univ.), Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Sadahiko Miura, Hiroaki Honjo, Tadahiko Sugibayashi (NEC), Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ICD2014-17 |
We propose a novel power-gated microprocessor unit (MPU) using a nonvolatile flip-flop (NV-F/F) with magnetic tunnel jun... [more] | ICD2014-17 pp.85-90 |
| RECONF | 2013-09-18 17:25 |
Ishikawa | Japan Advanced Institute of Science and Technology | Nonvolatile reconfigurable device development platform using a phase change material Takumi Michida, Kazuya Tanigawa, Tetsuo Hironaka (Hiroshima City Univ.), Kenichi Shimomai, Takashi Ishiguro (TAIYO YUDEN) RECONF2013-25 |
We have studied a development technique of nonvolatile reconfigurable device MPLD using the phase change memory. The de... [more] |
RECONF2013-25 pp.31-36 |
| SDM | 2013-06-18 14:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | SiC Electric-Field-Induced Resistive Nonvolatile Memory
-- MIS and pn-Diode Type Memories -- Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.) SDM2013-57 |
We have proposed two types of metal/tunneling oxide layer/SiOx electron trap layer/n-SiC/n-Si (MIS) and p-type oxide sem... [more] | SDM2013-57 pp.67-70 |
| ICD | 2013-04-11 14:45 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2013-7 |
Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge num... [more] | ICD2013-7 pp.33-38 |
| ICD | 2013-04-11 17:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Panel Discussion]
Future prospects of memory solutions for smart society
-- Can new nonvolatile memories replace SRAM/DRAM/Flash? -- Koji Nii (Renesas Erctronics), Tetsuo Endoh (Tohoku Univ.), Yoshikazu Katoh (Panasonic), Satoru Hanzawa (Hitachi), Kazuhiko Kajigaya (Elpida Memory), Atsushi Kawasumi (Toshiba), Toru Miwa (SanDisk) ICD2013-11 |
(To be available after the conference date) [more] | ICD2013-11 p.53 |
| ICD | 2013-04-12 08:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Complementary atom-switch based programmable cell array and its demostraion of logic mapping synthesized from RTL code Makoto Miyamura, Munehiro Tada, Toshitsugu Sakamoto, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP) ICD2013-12 |
Reconfigurable nonvolatile programmable-logic using complementary atom switch (CAS) is successfully demonstrated on a 65... [more] | ICD2013-12 pp.55-59 |
| SDM | 2013-02-04 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Smart interconnect technology using atom switch for low-power programmable Logic Munehiro Tada, Toshitsugu Sakamoto, Makoto Miyamura, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP) SDM2012-152 |
Multi-level interconnect technology in ULSI is now facing the difficulty of the scaling limit. “BEOL devices” having a n... [more] | SDM2012-152 pp.9-14 |
| SDM, ED (Workshop) |
2012-06-28 08:30 |
Okinawa | Okinawa Seinen-kaikan | Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory Min Su Han, Yeong Hwan Kim, Kyung Soo Kim, Jae Min Lee, Youngcheol Oh, Woo Young Choi (Myongji Univ.), Woo Young Choi (Sogang Univ.), Il Hwan Cho (Myongji Univ.) |
The effect of a sacrificial layer residue on a cantilever beam in the nano-electro-mechanical nonvolatile memory is inve... [more] | |
| SDM, ED (Workshop) |
2012-06-28 09:15 |
Okinawa | Okinawa Seinen-kaikan | Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene Jong-Dae Lee, HyunMin Seung, Chang-Hwan Kim, Jea-Gun Park (Hanyang Uni.) |
We investigated the nonvolatile polymer 4F^2 memory-cell embedded with Ni Nanocrystals in surrounded by NiO in polystyre... [more] | |
| ICD | 2012-04-24 10:25 |
Iwate | Seion-so, Tsunagi Hot Spring (Iwate) | Design of an MTJ-Based Fully Parallel Nonvolatile TCAM Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.) ICD2012-9 |
Ternary content-addressable memories (TCAMs) are specific hardware accelerators which can realize high-speed fully-paral... [more] | ICD2012-9 pp.43-48 |
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