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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST)  SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| MW, ED | 2017-01-27 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] | ED2016-102 MW2016-178 pp.29-33 |
| ED | 2016-12-20 15:00 |
Miyagi | RIEC, Tohoku Univ | Terahertz Wireless Data Transmission with Frequency and Polarization Division Multiplexing Using Resonant-Tunneling-Diode Oscillators Naoto Oshima, Kazuhide Hashimoto, Safumi Suzuki, Masahiro Asada (Tokyotech) |
A resonant-tunneling-diode terahertz (THz) oscillator chip for frequency- and polarization-division multiplexing was fab... [more] | |
| MWP | 2016-11-14 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A compact terahertz spectroscopy system using a resonant tunneling diode and a photonic crystal cavity Kazuisao Tsuruda (ROHM/Osaka Univ), Kazuma Okamoto, Sebastian Diebold, Shintaro Hisatake, Masayuki Fujita, Tadao Nagatsuma (Osaka Univ) MWP2016-43 |
We investigate a compact frequency tunable signal source using resonant tunneling diode (RTD) and a photonic crystal cav... [more] | MWP2016-43 pp.1-5 |
| SCE | 2016-08-08 10:55 |
Saitama | Saitama Univ. (Omiya sonic city) | Improvement of fabrication and characterization for embedded STJ Morita Kohei, Matsumoto Isao (Saitama Univ.), Aoyagi Masahiro (AIST), Naruse Masato, Myoren Hiroaki, Taino Tohru (Saitama Univ.) SCE2016-13 |
Superconducting tunnel junction (STJ) is a candidate next generation photon detector because of its high energy resoluti... [more] | SCE2016-13 pp.9-12 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 15:30 |
Osaka | Central Electric Club | Performance Enhancement of Tunnel FET by Negative Capacitance Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-68 ICD2016-36 |
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] | SDM2016-68 ICD2016-36 pp.127-130 |
| ED | 2016-07-24 09:55 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-33 |
Hole-tunneling Si1-xGex/Si asymmetric-double-quantum-well resonant tunneling diode (ASDQW p-RTD) was optimized in terms ... [more] | ED2016-33 pp.31-34 |
| ED | 2016-07-24 11:00 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas for Circularly Polarized Wave Radiation Daisuke Horikawa, Safumi Suzuki, Masahiro Asada (Tokyo Tech) ED2016-35 |
We proposed and fabricated a novel resonant-tunneling-diode (RTD) terahertz (THz) oscillators for circularly polarized r... [more] | ED2016-35 pp.41-44 |
| ED | 2016-07-24 11:25 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa Takemi Tokuoka, Michihiko Suhara (TMU) ED2016-36 |
We analyse detection characteristics of a zero bias rectenna integrated with a semiconductor mesa for wireless communica... [more] | ED2016-36 pp.45-50 |
| SCE | 2016-04-20 17:00 |
Tokyo | SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) SCE2016-10 |
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] | SCE2016-10 pp.55-60 |
|
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
| SDM | 2016-01-28 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Van der Waals Junctions of Layered 2D Materials for Functional Devices Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123 |
Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dim... [more] | SDM2015-123 pp.13-16 |
| AP | 2016-01-15 10:55 |
Tokyo | Takushoku University, Hachiouji Campus | [Tutorial Lecture]
Applicable Range of Ray Tracing Method and Its Utilizations Yukiko Kishiki (KKE) AP2015-180 |
Ray tracing method is now becoming a major method to evaluate radiowave propagation properties. Without knowing the lim... [more] |
AP2015-180 pp.71-76 |
| ED | 2015-12-21 14:35 |
Miyagi | RIEC, Tohoku Univ | Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-94 |
We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to d... [more] | ED2015-94 pp.19-23 |
| ED | 2015-12-21 15:00 |
Miyagi | RIEC, Tohoku Univ | Extraction of intrinsic parameters in graphene-channel FET Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95 |
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] | ED2015-95 pp.25-30 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 14:15 |
Aomori | Aomori-Bussankan-Asupamu | [Invited Talk]
Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 |
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] | R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 pp.27-32 |
| ED | 2015-07-25 11:30 |
Ishikawa | IT Business Plaza Musashi 5F | Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2015-46 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] | ED2015-46 pp.51-55 |
| MRIS, ITE-MMS | 2015-07-10 16:35 |
Tokyo | Waseda Univ. | [Invited Talk]
Current status and new materials in nonvolatile magnetic memory devices Seiji Mitani (NIMS) |
Materials research on magnetic tunnel junctions for MRAM and logic devices is overviewed, including my group activities.... [more] | |
| SCE | 2015-04-22 13:55 |
Tokyo | Kikaishinkou-kaikan | Optimization of the Si substrate on NbN tunnel junctions for the terahertz mixing applications Kazumasa Makise, Hirotaka Terai (NICT) |
We have developed a niobium nitride superconducting mixer for terahertz band application. The NbN films are epitaxially ... [more] | |
| ED | 2015-04-17 10:55 |
Miyagi | Laboratory for Nanoelectronics and Spintronics | SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo/CREST JST) ED2015-13 |
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] | ED2015-13 pp.65-70 |
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