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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 60  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMM, BioX, ISEC, SITE, ICSS, HWS, IPSJ-CSEC, IPSJ-SPT [detail] 2023-07-25
13:20
Hokkaido Hokkaido Jichiro Kaikan ISEC2023-35 SITE2023-29 BioX2023-38 HWS2023-35 ICSS2023-32 EMM2023-35 The Hardware Security Technical Committee invited the author to give a presentation about his recent elevation to IEEE F... [more] ISEC2023-35 SITE2023-29 BioX2023-38 HWS2023-35 ICSS2023-32 EMM2023-35
pp.141-146
KBSE 2023-03-17
13:25
Hiroshima JMS ASTERPLAZA
(Primary: On-site, Secondary: Online)
A Note on Optimal Testcase Generation in Boundary Value Analysis
Xiujing Guo, Hiroyuki Okamura, Tadashi Dohi (Hiroshima Univ.) KBSE2022-65
In software testing, a protective measure to prevent faults in the code is to ensure that the behavior on the boundary b... [more] KBSE2022-65
pp.67-72
EE 2023-01-20
16:05
Fukuoka Kyushu Institute of Technology
(Primary: On-site, Secondary: Online)
Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters
Daisuke Arai, Aoi Oyane, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-54
The behavior of SiC-MOSFETs was analyzed using semiconductor device simulation (TCAD) in a series LC resonant inverter o... [more] EE2022-54
pp.157-162
SR 2022-01-25
13:40
Online Online [Short Paper] Roadside Video Broadcasting with Softcast
Junichiro Yamada, Katsuya Suto (UEC) SR2021-78
In the current autonomous driving, the surrounding situation is always grasped by using the cameras and sensors mounted ... [more] SR2021-78
pp.96-98
PRMU 2021-12-17
10:45
Online Online Analysis of Recognition Grounds of Models for Social Relationship Recognition Using Spatial-temporal TCAV
Runa Sugiyama (Ritsumeikan Univ.), Ying JI (Nagoya Univ.), Yu Wang, Jien Kato (Ritsumeikan Univ.) PRMU2021-45
Social relationships between people in videos are difficult to recognize with high accuracy using traditional methods. I... [more] PRMU2021-45
pp.113-117
NS, IN
(Joint)
2020-03-06
13:00
Okinawa Royal Hotel Okinawa Zanpa-Misaki
(Cancelled but technical report was issued)
Training Data Creation Method by PMI using MAP Estimation for the Automatic Test Cases Generation
Koki Sato, Yuki Matsumoto (Nihon Univ.), Takeshi Yamada, Kazuhiro Kikuma (NTT Corporation), Kiyoshi Ueda (Nihon Univ.) NS2019-237
NGN which have of the feature both of the internet and the PSTN is required the guarantee of the safety and the social d... [more] NS2019-237
pp.335-339
SDM 2019-11-08
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
pp.27-32
SDM 2019-11-08
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] SDM2019-77
pp.45-48
SDM 2019-11-08
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Investigation of TCAD Calibration Methods for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, Shigeaki Hayase (TDSC) SDM2019-78
In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and I... [more] SDM2019-78
pp.49-54
AP 2019-10-18
13:35
Osaka Osaka Univ. Beam Scanning Three-Dimensional Monopulse Antenna for Flying Cars Collision Avoidance
Shunya Kitahara, Nana Narukawa, Koichi Ogawa, Kazuhiro Honda (Toyama Univ.) AP2019-103
This paper presents the beam scanning three-dimensional monopulse antenna for flying cars collision avoidance. In our pr... [more] AP2019-103
pp.125-130
SDM, ICD, ITE-IST [detail] 2019-08-07
14:15
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2
Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel
materials which ... [more]
SDM2019-37 ICD2019-2
pp.7-10
SDM 2019-01-29
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
pp.1-4
NS 2019-01-18
12:40
Nagasaki Nagasaki Prefectural Art Museum Training Data Creation Method for Machine Learning Performance Improvement in the Software Development Efficiency Technique
Koki Sato (Nihon Univ.), Takeshi Yamada, Kazuhiro Kikuma (NTT), Kiyoshi Ueda (Nihon Univ.) NS2018-184
NGN which have of the feature both of the internet and the PSTN is required the guarantee of the safety and the social d... [more] NS2018-184
pp.35-40
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM, ICD, ITE-IST [detail] 2018-08-07
11:30
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process
Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) SDM2018-28 ICD2018-15
(To be available after the conference date) [more] SDM2018-28 ICD2018-15
pp.15-20
VLD, HWS
(Joint)
2018-02-28
17:20
Okinawa Okinawa Seinen Kaikan Evaluation of a Radiation-Hardened Method and Soft Error Resilience on Stacked Transistors in 28/65 nm FDSOI Processes
Haruki Maruoka, Kodai Yamada, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-103
The continuous downscaling of transistors has resulted in an increase of reliability issues for semiconductor chips. In ... [more] VLD2017-103
pp.85-90
NS 2018-01-19
13:40
Okinawa Ishigakishi-Shoko-Kaikan The Automatic Test Case Creation Method by The Automatic Structuring of Specification
Koki Sato, Keitaro Iino (Nihon Univ.), Yoshikazu Nakamura, Kazuhiro Kikuma (NTT), Kiyoshi Ueda (Nihon Univ.) NS2017-158
NGN which have of the feature both of the internet and the PSTN is required the guarantee of the safety and the social d... [more] NS2017-158
pp.81-86
SDM 2017-02-06
13:35
Tokyo Tokyo Univ. [Invited Talk] Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143
We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] SDM2016-143
pp.23-28
MW, ED 2017-01-27
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] ED2016-108 MW2016-184
pp.63-68
CPSY, RECONF, VLD, IPSJ-SLDM, IPSJ-ARC [detail] 2017-01-24
11:20
Kanagawa Hiyoshi Campus, Keio Univ. Evaluation of the PEACH3 used for communication in application
Takahiro Kaneda (Keio Univ.), Toshihiro Hanawa (UTokyo), Hideharu Amano (Keio Univ.) VLD2016-83 CPSY2016-119 RECONF2016-64
Tightly Coupled Accelerators(TCA) architecture connects a number of GPUs directly through PCI Express using dedicated sw... [more] VLD2016-83 CPSY2016-119 RECONF2016-64
pp.91-96
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