Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2021-12-01 09:20 |
Online |
Online |
Soft Errors on Flip-flops Depending on Circuit and Layout Structures Estimated by TCAD Simulations Moeka Kotani, Ryuichi Nakajima (KIT), Kazuya Ioki (ROHM), Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25 |
We compare the soft error tolerance of conventional flip-flops (FFs) and the proposed radiation-hard FF with small area,... [more] |
VLD2021-17 ICD2021-27 DC2021-23 RECONF2021-25 pp.1-6 |
SDM, EID |
2017-12-22 14:00 |
Kyoto |
Kyoto University |
Brain type integrated system using IGZO thin film as variable resistance element Daiki Yamakawa, Yuki Shibayama, Keisuke Ikushima, Sumio Sugisaki (Ryukoku Univ.), Yoshinori Miyamae (ROHM), Mutsumi Kimura (Ryukoku Univ.) EID2017-19 SDM2017-80 |
[more] |
EID2017-19 SDM2017-80 pp.39-44 |
MWP |
2016-11-14 10:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A compact terahertz spectroscopy system using a resonant tunneling diode and a photonic crystal cavity Kazuisao Tsuruda (ROHM/Osaka Univ), Kazuma Okamoto, Sebastian Diebold, Shintaro Hisatake, Masayuki Fujita, Tadao Nagatsuma (Osaka Univ) MWP2016-43 |
We investigate a compact frequency tunable signal source using resonant tunneling diode (RTD) and a photonic crystal cav... [more] |
MWP2016-43 pp.1-5 |
MWP |
2016-11-14 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Modeling of External Feedback Effect of Resonant Tunneling Diode Oscillator for Terahertz Applications Luong Duy Manh, Kousuke Nishio, Yousuke Nishida, Sebastian Diebold (Osaka Univ.), Jaeyoung Kim, Kazuisao Tsuruda, Toshikazu Mukai (Rohm Co. Ltd.), Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.) MWP2016-44 |
Based on the circuit simulation method, the effect of terahertz (THz) external feedback on a resonant tunneling diode os... [more] |
MWP2016-44 pp.7-12 |
EMCJ |
2016-09-16 11:05 |
Hyogo |
University of Hyogo |
A current distribution measurement with magnetic near field intensity for designing wiring pattern in a SiC power module Eisuke Masuda, Takaaki Ibuchi, Tsuyoshi Funaki (Osaka Univ.), Hirotaka Otake, Tatsuya Miyazaki, Yasuo Kanetake, Takashi Nakamura (ROHM) EMCJ2016-50 |
Fast switching operation of wide-bandgap power semiconductor devices is expected to reduce the switching losses in a pow... [more] |
EMCJ2016-50 pp.1-6 |
EMCJ |
2016-05-13 14:50 |
Hokkaido |
Hokkaido University |
A study on influence of interconnect inductance of a SiC power module on transient characteristic Eisuke Masuda, Takaaki Ibuchi, Tsuyoshi Funaki (Osaka Univ.), Hirotaka Otake, Tatsuya Miyazaki, Yasuo Kanetake, Takashi Nakamura (ROHM) EMCJ2016-15 |
Fast switching operation using wide-bandgap power semiconductor devices is expected to reduce the switching loss in a co... [more] |
EMCJ2016-15 pp.35-40 |
ED |
2016-01-20 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115 |
The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state r... [more] |
ED2015-115 pp.19-24 |
EMT, MW, OPE, MWP, EST, IEE-EMT [detail] |
2015-07-16 11:00 |
Hokkaido |
Kushiro City Lifelong Learning Center |
[Invited Talk]
Recent Progress in Millimeter and Terahertz Wave Integrated Circuit Technologies for Communications and Sensing Applications Sebastian Diebold, Shunsuke Nakai (Osaka Univ.), Kazuisao Tsuruda, Toshikazu Mukai (ROHM Co.), Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.) EMT2015-11 MW2015-49 OPE2015-23 EST2015-15 MWP2015-14 |
With the possibility of large absolute bandwidths, the millimeter-wave (mmW, 30 to 300 GHz) and Terahertz (THz) frequenc... [more] |
EMT2015-11 MW2015-49 OPE2015-23 EST2015-15 MWP2015-14 pp.17-22 |
MWP |
2015-05-25 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Integration of terahertz wave photonic-crystal waveguide with diode devices Kazuisao Tsuruda (ROHM/Osaka Univ.), Asako Suminokura, Masahiro Yata (Osaka Univ.), Toshikazu Mukai (ROHM), Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.) MWP2015-2 |
[more] |
MWP2015-2 pp.7-12 |
ICD |
2015-04-17 13:30 |
Nagano |
|
[Invited Lecture]
A 2.4 pJ Ferroelectric-Based Non-Volatile Flip-Flop with 10-Year Data Retention Capability Hiromitsu Kimura, Takaaki Fuchikami, Kyoji Marumoto, Yoshikazu Fujimori (ROHM), Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) ICD2015-11 |
A ferroelectric-based (FE-based) non-volatile flip-flop (NVFF) is proposed for low-power LSI.
Since leakage current in ... [more] |
ICD2015-11 pp.51-55 |
SDM |
2013-06-18 16:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] |
SDM2013-61 pp.87-90 |
SDM |
2012-11-15 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
High Performance SiC Power Devices and Modules
-- Miniaturization of System by Low-Ron and High Temperature Operation -- Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) SDM2012-100 |
Ultra-small power modules with high temperature operation are realized by using low-Ron SiC trench MOSFET. [more] |
SDM2012-100 pp.9-10 |
SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] |
|
ED, SDM |
2010-07-02 09:30 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Invited Talk]
Development of Low on-resistance SiC Trench MOSFET and other SiC power devices Yuki Nakano, Ryota Nakamura, Katsuhisa Nagao, Takashi Nakamura, Hidemi Takasu (ROHM) ED2010-103 SDM2010-104 |
[more] |
ED2010-103 SDM2010-104 pp.233-236 |
RECONF |
2010-05-13 15:20 |
Nagasaki |
|
First Prototype Chip of a Non-Volatile Reconfigurable Logic using FeRAM Cells Masahiro Koga, Masahiro Iida, Motoki Amagasaki (Kumamoto Univ.), Yoshinobu Ichida, Mitsuro Saji, Jun Iida (ROHM), Toshinori Sueyoshi (Kumamoto Univ.) RECONF2010-5 |
An advantage of a RLD such as an FPGA is that it can be customized after being manufactured. However, there is a problem... [more] |
RECONF2010-5 pp.25-30 |
CPM, ED, LQE |
2007-10-11 16:20 |
Fukui |
Fukui Univ. |
Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.) |
[more] |
|
EMD, CPM, LQE, OPE |
2006-08-25 10:45 |
Hokkaido |
Chitose Arcadia Plaza |
Properties of ultra thin flexible organic field-effect transistor fabricated on polyimide thin film substrate Shigetaka Katori (Kyoto Univ.), Tokutaro Komatsu (Hitachi Chemical Co., Ltd), Takashi Kurihara (Kyoto Univ.), Noriyuki Shimoji (Rohm Co., Ltd.), Kazumi Matsushige (Kyoto Univ.) |
[more] |
EMD2006-38 CPM2006-68 OPE2006-80 LQE2006-45 pp.71-73 |
ED, SDM |
2006-01-26 13:55 |
Hokkaido |
Hokkaido Univ. |
Periodic Coulomb oscillation in Si single-eletron transistor based on multiple islands Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] |
ED2005-225 SDM2005-237 pp.7-11 |
ED, SDM |
2006-01-26 14:45 |
Hokkaido |
Hokkaido Univ. |
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] |
ED2005-227 SDM2005-239 pp.19-22 |
RCS, SIP (Joint) |
2006-01-27 11:20 |
Fukuoka |
Kyusyu Univ. |
A STUDY ON LPF ESTIMATION BASED ON ADAPTIVE FILTER FOR OFDM SYSTEM Shiho Danno, Naoto Sasaoka, Masaharu Kinoshita, Yoshio Itoh (Tottori Univ.), Baiko Sai (Rohm Co.) |
[more] |
SIP2005-138 pp.13-18 |