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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 20  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
Shizuoka   Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] ED2023-17 CPM2023-59 LQE2023-57
ED, MWPTHz 2022-12-19
Miyagi   [Invited Talk] Monolithic integrated 300GHz band rectennas with GaAsSb/InGaAs backward diodes
Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu) ED2022-74 MWPTHz2022-45
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] ED2022-74 MWPTHz2022-45
ED, THz 2021-12-20
(Primary: On-site, Secondary: Online)
Fabrication, evaluation and modeling of 300GHz band rectennas integrated with bow-tie antennas and backward diodes
Takumi Kimura, Michihiko Suhara, Kastuhiro Usui, Junki Wakayama (TMU), Kiyoto Asakawa (TMCIT), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu lab) ED2021-50
 [more] ED2021-50
MW, ED 2021-01-29
Online Online Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87
 [more] ED2020-34 MW2020-87
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] ED2018-77 MW2018-144
NS 2018-10-18
Kyoto Kyoto Kyoiku Bunka Center [Poster Presentation] Investigation of Smartphone Application that Utilizes Edge Computing and Cloud Computing
Takuji Tachibana, Naoya Okamoto (Univ. of Fukui) NS2018-113
 [more] NS2018-113
SDM 2017-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] SDM2017-61
MW, ED 2017-01-26
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174
 [more] ED2016-98 MW2016-174
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] ED2016-102 MW2016-178
ED 2016-07-23
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27
 [more] ED2016-27
ED 2015-07-24
Ishikawa IT Business Plaza Musashi 5F Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38
 [more] ED2015-38
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE
Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Naoya Okamoto, Masaru Sato, Satoshi Masuda, Keiji Watanabe (Fujitsu Lab.) ED2014-127 MW2014-191
 [more] ED2014-127 MW2014-191
LQE, ED, CPM 2014-11-28
Osaka   Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] ED2014-90 CPM2014-147 LQE2014-118
ED, LQE, CPM 2012-11-29
Osaka Osaka City University Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films
Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] ED2012-75 CPM2012-132 LQE2012-103
CPM, LQE, ED 2010-11-11
Osaka   High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109
 [more] ED2010-153 CPM2010-119 LQE2010-109
MW 2009-09-25
Tokyo Univ. of Electro-Communications C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] MW2009-86
MW, ED 2009-01-16
Tokyo Kikai-Shinko-Kaikan Bldg C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183
 [more] ED2008-218 MW2008-183
LQE, ED, CPM 2008-11-28
Aichi Nagoya Institute of Technology An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) ED2008-178 CPM2008-127 LQE2008-122
 [more] ED2008-178 CPM2008-127 LQE2008-122
SDM, R, ED 2007-11-16
Osaka   Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219
 [more] R2007-51 ED2007-184 SDM2007-219
MW, ED 2007-01-19
Tokyo Kikai-Shinko-Kaikan Bldg. Current collapse of inslated-gate GaN-HEMT
Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.)
 [more] ED2006-236 MW2006-189
 Results 1 - 20 of 20  /   
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