Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, CPM, LQE |
2024-11-29 16:20 |
Aichi |
Nagoya Institute of Technology (Aichi) |
Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu) ED2024-38 CPM2024-82 LQE2024-69 |
In this study, we successfully demonstrated the improved performance of InP-based metal-oxide-semiconductor high-electro... [more] |
ED2024-38 CPM2024-82 LQE2024-69 pp.73-78 |
AP (2nd) |
2024-08-05 15:15 |
Tokyo |
Chichijima (Tokyo) |
Approximate Evaluation of the Transmission Phase in Microstrip Line Bends Based on Geometric Shape
-- Optimal Shape for Arbitrary Bend Angles and Phase Change Due to Bending -- Yutaka Mimino, Takuichi Hirano (TCU), Naoya Okamoto, Shiro Ozaki, Naoki Hara (Fujitsu) |
We derived an approximate formula that provides the shape and phase change amount that minimizes the reflection loss for... [more] |
|
AP, SANE, SAT (Joint) |
2024-07-24 10:00 |
Hokkaido |
Frontier Research in Applied Sciences Building, Hokkaido University (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
A Waveguide Antenna Array Module for Sub-THz Communications Shiro Ozaki (Fujitsu), Takuichi Hirano (Tokyo City Univ.), Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) AP2024-21 |
For sub-THz communication applications, we developed an antenna array module with element pitch less than 1 wavelength (... [more] |
AP2024-21 pp.1-4 |
LQE, ED, CPM |
2023-11-30 14:20 |
Shizuoka |
(Shizuoka) |
Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] |
ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
ED, MWPTHz |
2022-12-19 14:45 |
Miyagi |
(Miyagi) |
[Invited Talk]
Monolithic integrated 300GHz band rectennas with GaAsSb/InGaAs backward diodes Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu) ED2022-74 MWPTHz2022-45 |
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] |
ED2022-74 MWPTHz2022-45 pp.15-18 |
ED, THz |
2021-12-20 14:20 |
Miyagi |
(Miyagi, Online) (Primary: On-site, Secondary: Online) |
Fabrication, evaluation and modeling of 300GHz band rectennas integrated with bow-tie antennas and backward diodes Takumi Kimura, Michihiko Suhara, Kastuhiro Usui, Junki Wakayama (TMU), Kiyoto Asakawa (TMCIT), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu lab) ED2021-50 |
[more] |
ED2021-50 pp.10-15 |
MW, ED |
2021-01-29 14:25 |
Online |
Online (Online) |
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] |
ED2020-34 MW2020-87 pp.34-37 |
MW, ED |
2019-01-17 15:00 |
Tokyo |
Hitachi, Central Research Lab. (Tokyo) |
Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] |
ED2018-77 MW2018-144 pp.51-54 |
NS |
2018-10-18 13:50 |
Kyoto |
Kyoto Kyoiku Bunka Center (Kyoto) |
[Poster Presentation]
Investigation of Smartphone Application that Utilizes Edge Computing and Cloud Computing Takuji Tachibana, Naoya Okamoto (Univ. of Fukui) NS2018-113 |
[more] |
NS2018-113 pp.43-44 |
SDM |
2017-11-09 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] |
SDM2017-61 pp.1-4 |
MW, ED |
2017-01-26 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] |
ED2016-98 MW2016-174 pp.13-16 |
MW, ED |
2017-01-27 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] |
ED2016-102 MW2016-178 pp.29-33 |
ED |
2016-07-23 14:00 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House (Tokyo) |
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27 |
[more] |
ED2016-27 pp.1-4 |
ED |
2015-07-24 14:05 |
Ishikawa |
IT Business Plaza Musashi 5F (Ishikawa) |
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] |
ED2015-38 pp.9-13 |
|