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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, THz | 2021-12-21 10:20 |
Miyagi | (Primary: On-site, Secondary: Online) |
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS)  ED2021-57 |
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] | ED2021-57 pp.44-47 |
| MRIS, ITE-MMS | 2021-10-08 15:35 |
Online | Online | Voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure Tomohiro Nozaki, Shingo Tamaru, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa (AIST) MRIS2021-9 |
Voltage controlled magnetic anisotropy (VCMA) effect has been attracted attention as a low power consumption spin manipu... [more] | MRIS2021-9 pp.13-16 |
| CPM | 2020-10-29 14:30 |
Online | Online | Growth of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates Houyao Xue, Koki Shiraishi, Yosuke Izuka, Shingo Taniguchi, Sora Saito, Tsubasa Saito, Yuichi Sato (Akita Univ) CPM2020-15 |
InN nanopillar-crystals were formed using multi-crystalline Si, which is widely used for low-cost solar cell formation, ... [more] | CPM2020-15 pp.15-18 |
| OPE, LQE, OCS | 2015-10-30 11:15 |
Oita | Beppu International Convention Center | Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate Kouichi Akahane, Toshimasa Umezawa, Atsushi Matsumoto, Naokatsu Yamamoto (NICT) OCS2015-73 OPE2015-123 LQE2015-92 |
We fabricated broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation ... [more] | OCS2015-73 OPE2015-123 LQE2015-92 pp.159-162 |
| LQE, LSJ | 2014-05-23 13:15 |
Fukui | Distributed Bragg reflectors with sinusoidal composition profile in AlGaAs Naoki Manabe, Satoshi Shimomura (Ehime Univ.) LQE2014-13 |
We have grown AlGaAs distributed Bragg reflectors (DBRs) with sinusoidal Al composition profile by molecular beam epitax... [more] | LQE2014-13 pp.57-60 |
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| SDM | 2013-06-18 13:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54 |
Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access... [more] | SDM2013-54 pp.51-55 |
| SDM, ED | 2013-02-27 16:55 |
Hokkaido | Hokkaido Univ. | Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164 |
Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] | ED2012-135 SDM2012-164 pp.39-42 |
| LQE | 2012-12-13 09:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT) LQE2012-121 |
19-stacked InGaAs quantum dot (QD) laser diode was fabricated by using ultrahigh-rate molecular beam epitaxial (MBE) gro... [more] | LQE2012-121 pp.1-4 |
| ED, LQE, CPM | 2012-11-30 11:00 |
Osaka | Osaka City University | Fabrication of red light emitting diode with GaN:Eu,Mg active layer Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech) ED2012-80 CPM2012-137 LQE2012-108 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2012-80 CPM2012-137 LQE2012-108 pp.65-70 |
| ED, SDM, CPM | 2012-05-17 13:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20 |
GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] | ED2012-18 CPM2012-2 SDM2012-20 pp.7-10 |
| LQE | 2011-12-16 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Encouragement Talk]
Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst. of Tech.) LQE2011-127 |
Lasing oscillation from a GaAs1-xBix/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAs0.97... [more] | LQE2011-127 pp.21-24 |
| LQE, ED, CPM | 2011-11-17 10:05 |
Kyoto | Katsura Hall，Kyoto Univ. | AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-73 CPM2011-122 LQE2011-96 |
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] | ED2011-73 CPM2011-122 LQE2011-96 pp.1-4 |
| LQE, ED, CPM | 2011-11-18 10:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Effect of Mg co-doping on optical characteristics of GaN:Eu Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-91 CPM2011-140 LQE2011-114 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2011-91 CPM2011-140 LQE2011-114 pp.93-97 |
| ED | 2011-07-30 13:30 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Growth and characterization of GaSb film on Si(111) substrate using Sb template layer Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) ED2011-54 |
We prepared GaSb films on Si(111) substrate by molecular beam epitaxy (MBE). To reduce misfit dislocations which are cau... [more] | ED2011-54 pp.85-89 |
| CPM, SDM, ED | 2011-05-19 14:15 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of BGaP Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24 |
Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] | ED2011-11 CPM2011-18 SDM2011-24 pp.55-58 |
| LQE | 2010-12-17 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst. Tech.) LQE2010-124 |
Lasing oscillation from a GaAs1-xBix/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAs0.97... [more] | LQE2010-124 pp.47-50 |
| ED, LQE, CPM | 2009-11-19 11:15 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Proposal of new growth method for high-quality InN and development on growth of InGaN Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-133 CPM2009-107 LQE2009-112 |
New radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) method, named droplet elimination by radical-beam ir... [more] | ED2009-133 CPM2009-107 LQE2009-112 pp.25-29 |
| LQE, ED, CPM | 2008-11-27 09:30 |
Aichi | Nagoya Institute of Technology | Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) ED2008-152 CPM2008-101 LQE2008-96 |
GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] | ED2008-152 CPM2008-101 LQE2008-96 pp.1-6 |
| EMT, LQE, OPE, PN | 2008-01-29 09:55 |
Osaka | Growth of GaAsBi/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy Yusuke Kinoshita, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst.Tec.) PN2007-56 OPE2007-164 LQE2007-142 |
GaAs1-xBix/GaAs multi-quantum well (MQW) structures were grown on GaAs substrate by molecular beam epitaxy (MBE) towards... [more] | PN2007-56 OPE2007-164 LQE2007-142 pp.107-110 |
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| CPM | 2007-11-17 15:30 |
Niigata | Nagaoka University of Technology | Characterization of GaSb/AlGaSb multi-quantum-well structures grown on Si substrates Hideyuki Toyota, Takeshi Yasuda, Syuusaku Fujie (Nagaoka Univ. of Tech.), (Aoyama Gakuin Univ.), Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-127 |
We prepared GaSb/AlGaSb multiple-quantum-well (MQW) structures on silicon substrates by molecular beam epitaxy (MBE). To... [more] | CPM2007-127 pp.115-119 |
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