IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2010-02-22 - 2010-02-23 / Issue Date : 2010-02-15

SDM2009-193
Neuromorphic adiabatic quantum computation based on phosphorus nuclear spin array in Si
Mitsunaga Kinjo (Univ. of the Ryukyus), Shigeo Sato (Tohoku Univ.)
pp. 1 - 3

SDM2009-194
Seebeck coefficient in heavily-doped SOI layers
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.)
pp. 5 - 9

SDM2009-195
Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors
Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.)
pp. 11 - 15

SDM2009-196
Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots
Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.)
pp. 17 - 21

SDM2009-197
MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.)
pp. 23 - 28

SDM2009-198
Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory
Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.)
pp. 29 - 33

SDM2009-199
Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration
Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 35 - 39

SDM2009-200
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration
Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech)
pp. 41 - 45

SDM2009-201
Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes
Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.)
pp. 47 - 52

SDM2009-202
[Invited Talk] Effect of interface properties on characteristics of carbon nanotube FETs
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 53 - 58

SDM2009-203
CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films
Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.)
pp. 59 - 63

SDM2009-204
Fabrication of nanowire-based sequential circuits using gate-controlled GaAs three-branch nanowire junctions
Hiromu Shibata, Daisuke Nakata, Yuta Shiratori (Hokkaido Univ), Seiya Kasai (Hokkaido Univ/JST)
pp. 65 - 70

SDM2009-205
Compact Reconfigurable BDD Logic Circuits utilizing GaAs Nanowire Network
Yuta Shiratori, Kensuke Miura (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST)
pp. 71 - 76

SDM2009-206
Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures
Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.)
pp. 77 - 80

SDM2009-207
Electrical Property of CNT/cellulose Composite Paper
Tomo Tanaka, Eiichi Sano (Hokkaido Univ.), Kousuke Akiyama, Masanori Imai (Tokushu Paper)
pp. 81 - 85

SDM2009-208
Nonvolatile memory based on carbon nanotube field-effect transistors
Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.)
pp. 87 - 91

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan