Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2012] | [2013] | [2014] | [2015] | [2016] | [2017] | [2018] | [Japanese] / [English]
SDM2015-38
[Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.)
pp. 1 - 4
SDM2015-39
[Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy
Yutaka Tokuda (Aich Inst. of Technol.)
pp. 5 - 10
SDM2015-40
[Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)
pp. 11 - 16
SDM2015-41
[Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric)
pp. 17 - 20
SDM2015-42
[Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC
Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric)
pp. 21 - 26
SDM2015-43
[Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 27 - 30
SDM2015-44
Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure
Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ)
pp. 31 - 35
SDM2015-45
First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.)
pp. 37 - 40
SDM2015-46
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides
Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 41 - 45
SDM2015-47
Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs
Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)
pp. 47 - 50
SDM2015-48
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
pp. 51 - 55
SDM2015-49
Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 57 - 61
SDM2015-50
Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 63 - 68
SDM2015-51
Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.)
pp. 69 - 73
SDM2015-52
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 75 - 80
SDM2015-53
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.)
pp. 81 - 86
SDM2015-54
[Invited Lecture]
Bandgap opening and electrode contact resistances in bilayer graphene field-effect transistors
Ryo Nouchi (Osaka Pref. Univ.)
pp. 87 - 92
SDM2015-55
[Invited Lecture]
Electrostatically-controllable polarity of transistors on atomically-thin films
Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST)
pp. 93 - 98
SDM2015-56
[Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST)
pp. 99 - 103
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.