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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2024-02-29 11:00 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Hydrogen partial pressure evaluation using zinc oxide thin film transistor Kaito Otsuka, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.)  CPM2023-100 |
Hydrogen is expected to be an environmentally friendly clean energy source, but since it is fllammable and explosive, th... [more] | CPM2023-100 pp.15-18 |
| EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] | 2024-01-25 13:10 |
Kyoto | (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] Yoshiya Abe, Kenta Yachida, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.), Hidenori Kawanishi, Mutsumi Kimura (Ryukoku Univ.) EID2023-3 |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] | EID2023-3 pp.5-8 |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| SDM | 2023-10-13 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Defect Reduction in UV Nanoimprint Lithography Toshiki ITO (Canon) SDM2023-54 |
Field-by-field type UV nanoimprint lithography equipped with on-demand inkjet dispense system has been developed, which ... [more] | SDM2023-54 pp.1-6 |
| SDM | 2023-10-13 16:20 |
Miyagi | Niche, Tohoku Univ. | Formation and basic evaluation of gallium oxide thin film on sapphire substrate Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college) SDM2023-59 |
Recently, the development of wide bandgap semiconductor materials has become increasingly important. In particular, ther... [more] | SDM2023-59 pp.34-39 |
| CPM, ED, SDM | 2023-05-19 13:00 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
[Invited Talk]
Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.) ED2023-1 CPM2023-1 SDM2023-18 |
We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] | ED2023-1 CPM2023-1 SDM2023-18 pp.1-6 |
| HWS | 2023-04-15 10:45 |
Oita | (Primary: On-site, Secondary: Online) |
PUF Based on Fetal-Movement Circuit Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura (Osaka Univ.) HWS2023-12 |
As a yet unexploited high-energy source for powering ICs, this paper focused on high-energy plasma in a semiconductor f... [more] | HWS2023-12 pp.49-50 |
| ICD | 2023-04-11 13:20 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL) ICD2023-10 |
We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using ... [more] | ICD2023-10 pp.18-23 |
| SDM | 2023-01-30 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80 |
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors. A da... [more] |
SDM2022-80 pp.5-8 |
| CPM, ED, LQE | 2022-11-24 11:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films Masahide Shimura, Koji Abe (Nitech) ED2022-28 CPM2022-53 LQE2022-61 |
Abstract Metal hydroxides are important inorganic materials used as flame retardants and precursors for metal oxide syn... [more] | ED2022-28 CPM2022-53 LQE2022-61 pp.23-26 |
| CPM, ED, LQE | 2022-11-24 13:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech) ED2022-30 CPM2022-55 LQE2022-63 |
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] | ED2022-30 CPM2022-55 LQE2022-63 pp.33-36 |
| SDM | 2022-01-31 15:30 |
Online | Online | [Invited Talk]
Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.) SDM2021-72 |
We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabr... [more] | SDM2021-72 pp.16-19 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| ED, IEE-BMS, IEE-MSS | 2021-08-06 15:25 |
Online | Online | Design of sensor resistance-voltage converters for gas discrimination based on feature patterns extracted by metal-oxide memristors Takehiro Hirota, Takefumi Yoshikawa, Tatsuya Iwata (TPU) ED2021-13 |
In this study, we attempted to obtain the feature pattern of gas sensor transient characteristics using metal-oxide memr... [more] | ED2021-13 pp.9-12 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:30 |
Online | Online | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37 |
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] | EID2020-3 SDM2020-37 pp.9-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:25 |
Online | Online | Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) EID2020-4 SDM2020-38 |
We conducted research and development of a large hardware neural network by using oxide semiconductors of In-Ga-Zn-O (IG... [more] | EID2020-4 SDM2020-38 pp.13-16 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:30 |
Online | Online | [Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] | EID2020-10 SDM2020-44 pp.37-41 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
| SDM, OME | 2020-04-14 11:10 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Development of oxide thin-film transistors for large-sized flexible displays Hiroshi Tsuji, Mitsuru Nakata, Tatsuya Takei, Masashi Miyakawa, Yoshiki Nakajima, Takahisa Shimizu (NHK) |
Large-screen flexible displays using plastic substrates are promising candidates for 8K TV for home use due to their sup... [more] | |
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