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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-01-29 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST)  SDM2013-137 |
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] | SDM2013-137 pp.9-12 |
| ICD | 2014-01-28 15:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Poster Presentation]
Design of CMOS Transmission Line-to-Waveguide Transitions from Milimeter Wave Hitoshi Kunitake, Kyoya Takano, Mizuki Motoyoshi, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.) ICD2013-130 |
Recently, a millimeter wave circuit with CMOS process has been realized. Since waveguide interface is preferable to appl... [more] | ICD2013-130 p.73 |
| SDM | 2013-12-13 17:20 |
Nara | NAIST | Characterization of interface states in SiC MOS structures with various crystal faces by conductance method Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133 |
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] | SDM2013-133 pp.101-105 |
| CPM, LQE, ED | 2013-11-29 15:25 |
Osaka | Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3 Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.) ED2013-86 CPM2013-145 LQE2013-121 |
We investigated the dependence of the electrical properties on the fabrication procedure for InAlN MOS structure having ... [more] | ED2013-86 CPM2013-145 LQE2013-121 pp.101-105 |
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| SDM | 2013-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98 |
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] | SDM2013-98 pp.51-56 |
| ED | 2013-08-09 09:25 |
Toyama | University of Toyama | Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] | ED2013-45 pp.37-42 |
| SDM | 2013-06-18 09:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] | SDM2013-45 pp.7-11 |
| SDM | 2013-06-18 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] | SDM2013-48 pp.25-28 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2013-06-18 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] | SDM2013-61 pp.87-90 |
| SDM | 2013-06-18 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] | SDM2013-62 pp.91-96 |
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| ED, LQE, CPM | 2012-11-29 15:25 |
Osaka | Osaka City University | Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] | ED2012-74 CPM2012-131 LQE2012-102 pp.37-40 |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| ICD | 2012-04-23 12:30 |
Iwate | Seion-so, Tsunagi Hot Spring (Iwate) | [Invited Talk]
A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yuui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Jiyun Nakai (Toshiba), Teruhiko Kamei (SanDisk) ICD2012-1 |
A 64Gb MLC NAND flash memory on 19nm CMOS technology has been developed. By adopting One-Sided All-Bit-Line architecture... [more] | ICD2012-1 pp.1-5 |
| ICD | 2012-04-23 13:20 |
Iwate | Seion-so, Tsunagi Hot Spring (Iwate) | [Invited Talk]
128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate Teruhiko Kamei, Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Masaaki Higashitani, Tuan Pham, Mitsuyuki Watanabe (SanDisk), Mitsuaki Honma, Yoshihisa Watanabe (Toshiba) ICD2012-2 |
A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capaci... [more] | ICD2012-2 pp.7-12 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
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