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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-06-14 09:45 |
Tokyo | Hachijomachi-shoko-kai (Primary: On-site, Secondary: Online) |
Sigmoid-Function-Based Power Splitting for A 1.2 to 5.7GHz Multi-Mode Dual-Input Power Amplifier Takuma Torii, Ao Yamashita, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric)  MW2024-23 |
(To be available after the conference date) [more] | MW2024-23 pp.22-27 |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
|
| ED, MWPTHz | 2022-12-19 16:45 |
Miyagi | Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] | ED2022-77 MWPTHz2022-48 pp.28-33 |
|
| ED, THz | 2021-12-21 09:00 |
Miyagi | (Primary: On-site, Secondary: Online) |
[Invited Talk]
InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55 |
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] | ED2021-55 pp.34-39 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| ED, THz | 2018-12-18 09:00 |
Miyagi | RIEC, Tohoku Univ. | [Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] | ED2018-62 pp.35-38 |
| AP, MW (Joint) |
2018-09-20 14:55 |
Tokyo | Tokyo Tech | 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60 |
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] | MW2018-60 pp.7-12 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| ED | 2016-01-20 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118 |
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] | ED2015-118 pp.37-41 |
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| ED | 2015-12-21 14:35 |
Miyagi | RIEC, Tohoku Univ | Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-94 |
We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to d... [more] | ED2015-94 pp.19-23 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 14:15 |
Aomori | Aomori-Bussankan-Asupamu | [Invited Talk]
Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 |
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] | R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 pp.27-32 |
| ED, MW | 2014-01-17 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A design method of the full-waveguide-band MMIC mixer for 90-140 GHz Hiroshi Hamada, Toshihiko Kosugi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka (NTT) ED2013-129 MW2013-194 |
MMIC mixer circuit for the full-waveguide-band spectrum analysis in 90-140 GHz will be reported. We designed the drain-i... [more] | ED2013-129 MW2013-194 pp.109-113 |
| ED | 2013-12-16 13:15 |
Miyagi | Research Institute of Electrical Communication Tohoku University | [Invited Talk]
Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies Masaru Sato, Yoichi Kawano, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-91 |
Recent advances in the process technology of electronics devices have opened the possibility of achieving submillimeter-... [more] | ED2013-91 pp.7-11 |
| ED | 2013-12-16 14:20 |
Miyagi | Research Institute of Electrical Communication Tohoku University | An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93 |
A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at ... [more] | ED2013-93 pp.19-23 |
| ED | 2013-08-09 09:00 |
Toyama | University of Toyama | MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44 |
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] | ED2013-44 pp.33-36 |
| MW, ED | 2013-01-17 16:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 120-GHz-band 20-Gb/s QPSK Transmitter and Receiver modules Hiroyuki Takahashi, Toshihiko Kosugi, Akihiko Hirata, Jun Takeuchi, Koichi Murata, Naoya Kukutsu (NTT) ED2012-116 MW2012-146 |
NTT laboratories are developing a 120-GHz-band wireless link using quadrature-phase-shift keying (QPSK). We have reporte... [more] | ED2012-116 MW2012-146 pp.23-28 |
| MW, ED | 2013-01-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157 |
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] | ED2012-127 MW2012-157 pp.79-84 |
| ED | 2012-12-17 13:50 |
Miyagi | Tohoku University | F-Band Bidirectional Amplifier Using 75-nm InP HEMTs Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2012-95 |
We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-ran... [more] | ED2012-95 pp.11-15 |
| MWP, OPE, MW, EMT, EST, IEE-EMT [detail] | 2012-07-26 09:55 |
Hokkaido | Hokkaido Univ. | 120-GHz-band outddor wireless link using photonics and electronic technologies Akihiko Hirata, Hiroyuki Takahashi, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, Koichi Murata (NTT) MW2012-29 OPE2012-22 EST2012-11 MWP2012-10 |
NTT has been developing outdoor 120-GHz-band wireless link that can transmit 10-Gbit/s data in order to meet the require... [more] | MW2012-29 OPE2012-22 EST2012-11 MWP2012-10 pp.11-15 |
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