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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.)  R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| ED, CPM, LQE | 2021-11-25 13:05 |
Online | Online | [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) ED2021-19 CPM2021-53 LQE2021-31 |
(To be available after the conference date) [more] | ED2021-19 CPM2021-53 LQE2021-31 pp.25-28 |
| ED, CPM, LQE | 2021-11-26 15:20 |
Online | Online | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45 |
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] | ED2021-33 CPM2021-67 LQE2021-45 pp.83-86 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
| LQE, CPM, ED | 2020-11-27 15:20 |
Online | Online | MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75 |
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] | ED2020-24 CPM2020-45 LQE2020-75 pp.91-94 |
| CPM, LQE, ED | 2019-11-21 14:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86 |
(To be available after the conference date) [more] | ED2019-43 CPM2019-62 LQE2019-86 pp.45-48 |
| CPM, LQE, ED | 2019-11-22 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98 |
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] | ED2019-55 CPM2019-74 LQE2019-98 pp.93-96 |
| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-18 11:40 |
Osaka | Osaka University Nakanoshima Center | Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 |
Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with... [more] | PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 pp.247-250 |
| LQE, LSJ | 2018-05-25 13:25 |
Fukui | Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16 |
We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] | LQE2018-16 pp.25-28 |
|
| LQE, CPM, ED | 2017-12-01 14:45 |
Aichi | Nagoya Inst. tech. | Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79 |
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] | ED2017-66 CPM2017-109 LQE2017-79 pp.83-86 |
| SDM | 2017-11-09 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] | SDM2017-61 pp.1-4 |
| OCS, OPE, LQE | 2017-10-26 11:40 |
Kumamoto | Josaien, Sakuranobaba | MOVPE Growth for Mid Infrared Light Emitting and Detection Devices Masakazu Arai, Keita Yoshimoto, Yuya Yamagata, Yuki Fujiwara, Kakeru Takahashi (Univ. of Miyazaki), Takeshi Fujisawa (Hokkaido Univ.), Koji Maeda (Univ. of Miyazaki) OCS2017-40 OPE2017-72 LQE2017-45 |
Mid infrared wavelength has attracted for gas sensing and new band fiber optic devices. We developed MOVPE growth for Sb... [more] | OCS2017-40 OPE2017-72 LQE2017-45 pp.25-28 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| CPM, LQE, ED | 2016-12-13 10:05 |
Kyoto | Kyoto University | Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | ED2016-70 CPM2016-103 LQE2016-86 pp.67-70 |
| OPE, LQE | 2016-06-17 13:15 |
Tokyo | Fabrication of GaInAsP laser using directly bonded InP/Si Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22 |
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] | OPE2016-12 LQE2016-22 pp.15-20 |
|
| ED, LQE, CPM | 2015-11-26 10:55 |
Osaka | Osaka City University Media Center | Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] | ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| LQE, OPE | 2015-06-19 13:25 |
Tokyo | Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2015-13 LQE2015-23 |
Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and inte... [more] | OPE2015-13 LQE2015-23 pp.15-20 |
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