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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
10:10
Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) [Memorial Lecture] Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo) SDM2023-27
Nano-sheet channel has been recently adopted in logic CMOS as the next-generation channel for FinFET because the nano-sh... [more] SDM2023-27
pp.1-4
RCS, SR, SRW
(Joint)
2021-03-05
10:30
Online Online Performance Evaluation of Base Station Cooperation Technologies in Millimeter-Wave Bands at Variable Base Station Deployments under High-Mobility Environments
Tatsuki Okuyama, Satoshi Suyama, Nobuhide Nonaka, Takahiro Asai (NTT DOCOMO) RCS2020-249
Commercial services of 5th generation mobile communication system (5G) are expanding. In 5G, Massive MIMO -based beamfor... [more] RCS2020-249
pp.207-211
NS, RCS
(Joint)
2019-12-20
14:55
Tokushima Tokushima Univ. 28GHz Band 5G Experimental Trial in High Mobility Environment Using the Shinkansen
Nopbuhide Nonaka, Kazushi Muraoka, Tatsuki Okuyama, Satoshi Suyama, Yukihiko Okumura, Takahiro Asai (NTT DOCOMO), Yoshihiro Matsumura (JR Central) RCS2019-264
Commercial services in fifth-generation (5G) mobile communication system will start by using 3.7 GHz, 4.5 GHz, and 28 GH... [more] RCS2019-264
pp.145-150
IN, RCS, NV
(Joint)
2018-05-11
10:05
Kanagawa Keio University A Study on Theoretical System Capacity Performance of MU-MIMO THP in the Presence of Terminal Mobility
Hirofumi Suganuma, Yukiko Shimbo, Nobuhiro Hiruma (Waseda Univ.), Hiromichi Tomeba, Takashi Onodera (Sharp), Fumiaki Maehara (Waseda Univ.) RCS2018-32
MU-MIMO Tomlinson-Harashima precoding (THP) achieves higher system capacity than MU-MIMO linear precoding (LP) thanks to... [more] RCS2018-32
pp.59-64
RCS, SR, SRW
(Joint)
2018-02-28
11:30
Kanagawa YRP Study on Effective Utilization of Micro Cells in Heterogeneous Network -- Performance Improvement of Frequency-efficiency by Mobility Control --
Eiji Okamoto (NITech), Mitsuru Uesugi (Panasonic), Yukitoshi Sanada (Keio Univ.), Hidekazu Murata (Kyoto Univ.) RCS2017-324
In the current mobile communication systems, heterogeneous network, in which broadband microcells with higher frequency ... [more] RCS2017-324
pp.41-44
IA, SITE, IPSJ-IOT [detail] 2016-03-04
08:55
Saga Nijino-Matsubara Hotel (Karatsu-shi, Saga-prefecture) Enhancement of Live Streaming Performance and Mobility in Data Oriented Network (NDN)
Ryosuke Omae, Masatoshi Kawarasaki (Tsukuba Univ.) SITE2015-68 IA2015-100
Named Data Network (NDN) is a typical example of Date Oriented Network. Although NDN is suitable for live streaming owin... [more] SITE2015-68 IA2015-100
pp.173-178
ED, SDM 2010-07-01
11:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus [Invited Talk] Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport
Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba) ED2010-79 SDM2010-80
We present the systematic study on the performance of short-channel and strained (100) and (110) n/pMOSFETs. Saturation ... [more] ED2010-79 SDM2010-80
pp.125-129
NS, IN
(Joint)
2010-03-04
10:00
Miyazaki Miyazaki Phoenix Seagaia Resort (Miyazaki) Implementation and Evaluation of Handoff Method between Access Nodes for P2PSIP and IMS Cooperating Networks
Tsunehiko Chiba, Satoshi Komorita, Hidetoshi Yokota (KDDI Labs) IN2009-166
As a new generation network architecture, the authors propose the concept of “Minimum Core”, which minimizes the mobile ... [more] IN2009-166
pp.133-138
ICD, SDM 2009-07-16
15:00
Tokyo Tokyo Institute of Technology Mobility in Silicon Nanowire GAA Transistor on (110) SOI
Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.) SDM2009-105 ICD2009-21
Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is described, ut... [more] SDM2009-105 ICD2009-21
pp.45-48
SDM, ED 2009-02-27
09:50
Hokkaido Hokkaido Univ. Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain
YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] ED2008-234 SDM2008-226
pp.59-62
SDM 2008-06-09
13:30
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo [Tutorial Lecture] Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS
Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) SDM2008-42
Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of l... [more] SDM2008-42
pp.1-6
SDM 2008-06-09
16:50
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] SDM2008-46
pp.23-27
SDM, VLD 2007-10-30
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation
Takashi Mori, Yuusuke Azuma, Hideaki Tsuchiya (Kobe Univ.) VLD2007-51 SDM2007-195
A variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of... [more] VLD2007-51 SDM2007-195
pp.5-10
SDM, VLD 2006-09-26
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.)
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] VLD2006-43 SDM2006-164
pp.25-29
MoNA, IN
(Joint)
2005-11-18
15:20
Fukuoka Fukuoka Institute of Technology Ad-hoc Multicast Protocol for Mobile Nodes
Takanori Sudo (Chiba Univ.), Hiroyuki Iizuka, Yuichiro Ezure, Akira Matsumoto, Tetsuya Ito (NEC Communication Systems, Ltd.), Shiro Sakata (Chiba Univ.)
Data transmission failure and loss which occur when terminals move a high speed cause a serious problem in mobile ad hoc... [more] IN2005-109
pp.55-60
 Results 1 - 15 of 15  /   
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