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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
EE, CPM, OME 2023-12-09
11:20
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Investigation of Deposition Conditions for the Preparation of Soluble Phthalocyanine Thin Films Using Solution Coating Methods
Takumi Osuga, Yusuke Nishimura, Dai Taguchi, Takaaki Manaka (Tokyo Tech) EE2023-39 CPM2023-95 OME2023-66
In order to improve the orientation of soluble phthalocyanine deposited by coating, we investigated the film formation c... [more] EE2023-39 CPM2023-95 OME2023-66
pp.77-82
OME, SDM 2017-04-20
16:45
Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Development of a flexible differential amplifier using p-type organic transistors
Masahiro Sugiyama, Takahumi Uemura, Shusuke Yoshimoto, Mihoko Akiyama, Teppei Araki, Tsuyoshi Sekitani (Osaka Univ.) ICD2016-78 CPSY2016-84
(To be available after the conference date) [more] ICD2016-78 CPSY2016-84
p.83
SDM 2016-10-27
10:25
Miyagi Niche, Tohoku Univ. A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs
Yasutaka Maeda, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2016-74
The growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneath mate... [more] SDM2016-74
pp.31-34
SDM, OME 2016-04-08
12:00
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) SDM2016-3 OME2016-3
High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (O... [more] SDM2016-3 OME2016-3
pp.11-15
OME 2016-03-03
16:15
Tokyo S322 lecture room, Tokyo Tech, O-okayama campus Fabrication of organic transistor array on curved surface by thermal press molding
Kento Watanabe, Yushi Sasaki, Junro Hayashi, Masatoshi Sakai, Yugo Okada, Hiroshi Yamauchi, Kazuhiro Kudo (Chiba Univ.) OME2015-91
Organic transistor has been studied to apply bioelectronics such as biosensor and artificial retina, by making use of fl... [more] OME2015-91
pp.25-28
OME 2015-10-23
15:50
Osaka Osaka Univ. Nakanoshima Center Fabrication of OFETs using mixed solvent for high mobility and low threshold voltage
Ryosuke Nakamichi, Takashi Nagase, Takashi Kobayashi (Osaka Pref. Univ.), Yuichi Sadamitsu (Nippon Kayaku Co., Ltd.), Hiroyoshi Naito (Osaka Pref. Univ.) OME2015-58
It is important to develop methods of controlling electrical characteristics of organic field-effect transistor (OFET). ... [more] OME2015-58
pp.43-46
OME 2015-10-16
13:25
Tokyo Kikai-Shinko-Kaikan Bldg Fabrication of flexible organic transistors by ultrasonic welding
Tokuyuki Koh, Tatsuhiko Sasaki, Yota Yamazaki, Masatoshi Sakai, Yugo Okada, Hiroshi Yamauchi (Chiba Univ.), Yuichi Sadamitsu, Shoji Shinamura (Nippon Kayaku), Kazuhiro Kudo (Chiba Univ.) OME2015-43
Printing process is one of the deposition technique of the organic semiconductor layer for making organic flexible devic... [more] OME2015-43
pp.7-10
OME 2013-03-08
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. B1-2 Structure and Characteristics of Pentacene Field-Effect Transistors with Carrier Generation Layer
Shun Usuba, Akira Baba, Kazunari Shinbo, Keizo Kato, Futao Kaneko (Niigata Univ.), Masahiro Minagawa (NNCT) OME2012-107
In this study, carrier generation layers which have been used in organic light-emitting diodes were adopted to organic f... [more] OME2012-107
pp.9-12
SDM, ED
(Workshop)
2012-06-27
15:15
Okinawa Okinawa Seinen-kaikan Field-induced degradation of organic field effect transistors under vacuum condition
Hoonsang Yoon, Youngjin Kang, Jongsun Choi, Hyungtak Kim (Hongik Univ.)
OFETs suffer from environmental factors such as humidity and air. OFETs also degrade under electric bias stress test per... [more]
OME 2012-05-24
13:30
Tokyo NTT Musashino Research and Development Center Growth of organic single-crystals in ionic liquid by vacuum deposition and their FET characteristics
Yoko Takeyama (Tokyo Tec.), Shinpei Ono (CRIEPI), Yuji Matsumoto (Tokyo Tec.) OME2012-20
Organic transistor characteristics of single-crystal phase pentacene were demonstrated. Ionic liquids (ILs) were used as... [more] OME2012-20
pp.7-11
SDM 2009-10-30
11:00
Miyagi Tohoku University Investigation of characteristics of pentacene-based MOSFETs structures
Young-Uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) SDM2009-127
In order to realize organic devices with low operation voltage, we have fabricated thin pentacene-based metal-oxide-semi... [more] SDM2009-127
pp.43-46
SDM, ED 2009-06-24
16:15
Overseas Haeundae Grand Hotel, Busan, Korea Electrical characteristics of OFETs with thin gate dielectric
Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) ED2009-63 SDM2009-58
In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantace... [more] ED2009-63 SDM2009-58
pp.59-62
OME, SDM 2009-04-24
13:55
Saga AIST Kyushu-center Solution preparation effect on n-type field-effect-transistor characteristics using PCBM
Kosuke Hamachi, Takeomi Morita, Shuichi Nagamatsu, Wataru Takashima (Kyushu Inst. of Tech.), Shuishiro Kuwajima (Kyoto Uni.), Keiichi Kaneto (Kyushu Inst. of Tech.) SDM2009-1 OME2009-1
We investigated the preparation dependence on the electronic characteristics of n-type organic field-effect transistors ... [more] SDM2009-1 OME2009-1
pp.1-4
OME 2008-10-31
13:00
Tokyo ToKyo Univ. Faculty of Engineering Bldg.6 Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process
Kosuke Narita, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2008-50
In this work, the evaluation of gate insulating materials for organic field effect transistor (OFET) and improvement of ... [more] OME2008-50
pp.1-4
EMD, CPM, OME 2008-06-27
16:20
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of pentacene FET with ferroelectric gate insulator: effect of Source and Drain electrodes
Shuhei Yoshita, Ryosuke Tamura, Eunju Lim, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) EMD2008-20 CPM2008-39 OME2008-41
Using pentacene field effect transistors with ferroelectric gate insulator, we studied the charge accumulation at the FE... [more] EMD2008-20 CPM2008-39 OME2008-41
pp.53-57
OME 2008-05-29
16:00
Tokyo Denki-Club, Meeting room 3 Electrical Characterization of Vertical Channel Organic Field-Effect Transistor with Step-Edge Structure
Tomoki Takano, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2008-29
The organic field-effect transistor (OFET) with step-edge structure having a very short channel length was fabricated. S... [more] OME2008-29
pp.45-50
OME 2007-11-09
13:20
Niigata Niigata Univ. Electrical and Electro-optical properties of poly (3-hexylthiophene) field effect transistors
Hiroshi Nagai, Eiji Itoh, Keiichi Miyairi (Shinshu Univ.) OME2007-50
We investigated an electro-optical property of polymer-based field effect transistor (p-FET) by charge modulation spectr... [more] OME2007-50
pp.11-15
CPM 2007-08-09
13:40
Yamagata Yamagata Univ. Chemical modification of oxide surface on P3HT organic FETs
Kyosuke Koiwa (Yamagata Univ.), Yu Matsushima, Tei Henshin (Yamagata Univ), Fumihiko Hirose (Yamagata Univ/JST-CREST), Yasuo Kimura, Mithio Niwano, Kingo Itaya (Tohoku Univ./JST-CREST) CPM2007-37
P3HT has attracted much attention as a source material of organic field effect transistors (OFETs) because it is easily ... [more] CPM2007-37
pp.5-8
ICD, SDM 2006-08-18
09:25
Hokkaido Hokkaido University Experimental Study on Breakdown of Mobility Universality in (110)-oriented <100>-directed pMOSFETs
Ken Shimizu, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)
(110)-oriented pMOSFET is a promising choice for future CMOS device. However, physical origin of breakdown on mobility u... [more] SDM2006-143 ICD2006-97
pp.105-109
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