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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-06-21 15:50 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Electronic properties of heterostructures of transition metal dichalchogenides Mina Maruyama (Univ. of Tsukuba)  SDM2022-29 |
[more] | SDM2022-29 pp.20-22 |
| CPM | 2021-03-03 11:30 |
Online | Online | Fabrication of ZnO nanorods/CuO and ZnO nanorods/Cu₂O heterojunctions by Chemical bath Deposition Takuma Omoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol. Kagawa Coll.) CPM2020-64 |
Copper (II) oxide (CuO) and copper (I) oxide (Cu2O) films were grown on Au/Ti/Si(100) substrates by conventional chemica... [more] | CPM2020-64 pp.34-37 |
| SDM | 2020-11-20 15:40 |
Online | Online | [Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33 |
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] | SDM2020-33 pp.52-57 |
| SDM | 2016-06-29 17:00 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Growth and characterization of atomically-thin transition metal dichalcogenides Yasumitsu Miyata (Tokyo Metropolitan Univ.) SDM2016-47 |
Recently, atomic layers of transition metal dichalcogenides (TMDCs) have attracted much attention because of their uniqu... [more] | SDM2016-47 pp.79-84 |
| LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] | 2016-01-28 10:55 |
Hyogo | Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 |
Since a long-wavelength transistor lasers（TL）has 3 electrical terminals, which are different from the conventional LDs, ... [more] | PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 pp.21-26 |
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| ED | 2015-12-22 10:05 |
Miyagi | RIEC, Tohoku Univ | Terahertz Emission and Detection from Double Graphene Layer Heterostructures Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.) ED2015-103 |
We report on experimental observation of terahertz emission and detection in a double graphene layer hetero structure wh... [more] | ED2015-103 pp.71-76 |
| CPM, OPE, LQE, R, EMD | 2015-08-28 09:35 |
Aomori | Aomori-Bussankan-Asupamu | Analysis of heat dissipation and evaluation of current reduction of 1.3 μm wavelength InGaAlAs BH laser Takahiko Shindo, Wataru Kobayashi, Yoshihiro Ogiso, Naoki Fujiwara, Ryuzo Iga, Yoshitaka Ohiso, Hiroyuki Ishii (NTT) R2015-37 EMD2015-45 CPM2015-61 OPE2015-76 LQE2015-45 |
The 1.3 μm wavelength InGaAlAs directly modulated semiconductor laser is a promising candidate as a high-speed semicondu... [more] | R2015-37 EMD2015-45 CPM2015-61 OPE2015-76 LQE2015-45 pp.73-76 |
| LQE, ED, CPM | 2014-11-28 14:30 |
Osaka | MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.) ED2014-93 CPM2014-150 LQE2014-121 |
InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdow... [more] | ED2014-93 CPM2014-150 LQE2014-121 pp.97-102 |
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| ED | 2012-12-18 11:40 |
Miyagi | Tohoku University | High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2012-106 |
Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications mo... [more] | ED2012-106 pp.75-76 |
| LQE | 2012-12-13 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Ultra-high-speed direct modulation of AlGaInAs semi-insulating buried-heterostructure distributed-reflector lasers Takasi Simoyama, Manabu Matsuda, Shigekazu Okumura, Ayahito Uetake, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Labs.) LQE2012-124 |
AlGaInAs-MQW distributed reflector (DR) laser with semi-insulating buried-heterostructure (SI-BH) has been developed as ... [more] | LQE2012-124 pp.15-18 |
| LQE, CPM, EMD, OPE, R | 2012-08-24 14:00 |
Miyagi | Tohoku Univ. | Silicon-germanium/silicon nano-wire waveguide for energy-saving optical switch and variable optical attenuator Shigeaki Sekiguchi, Lei Zhu, Teruo Kurahashi, Kenichi Kawaguchi, Ken Morito (Fujitsu Labs.) R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49 |
For active optical waveguide devices on silicon (Si)-platform, highly efficient carrier accumulation in the waveguide ... [more] |
R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49 pp.115-120 |
| ED | 2011-12-14 14:05 |
Miyagi | Tohoku University | Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers
-- Effects of AlGaN barrier thinning -- Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB) ED2011-102 |
Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabr... [more] | ED2011-102 pp.13-17 |
| LQE, ED, CPM | 2011-11-17 13:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102 |
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] | ED2011-79 CPM2011-128 LQE2011-102 pp.29-33 |
| LQE, ED, CPM | 2011-11-17 15:40 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] | ED2011-83 CPM2011-132 LQE2011-106 pp.49-54 |
| LQE | 2010-12-17 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Encouragement Talk]
AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (PETRA/Fujitsu/Fujitsu labs.), Shigekazu Okumura (Fujitsu labs.), Mitsuru Ekawa, Tsuyoshi Yamamoto (PETRA/Fujitsu/Fujitsu labs.) LQE2010-120 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2010-120 pp.27-32 |
| ED, SDM | 2010-06-30 09:40 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Keynote Address]
Challenge for electromechanical logic systems using compound semiconductor heterostructures Hiroshi Yamaguchi, Imran Mahboob, Hajime Okamoto, Koji Onomitsu (NTT) ED2010-48 SDM2010-49 |
GaAs/AlGaAs heterostructures are promising material systems for fabricating all on-chip electromechanical parametric res... [more] | ED2010-48 SDM2010-49 pp.1-4 |
| LQE | 2009-12-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (OITDA/Fujitsu/Fujitsu Laboratories), Shigekazu Okumura (Fujitsu Laboratories), Mitsuru Ekawa, Tsuyoshi Yamamoto (OITDA/Fujitsu/Fujitsu Laboratories) LQE2009-148 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2009-148 pp.51-56 |
| TL | 2009-02-06 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg.(not fixed) | Inheritance of analogia inventio and Principle of linguistic expression Masashi Saraki (Nihon Univ.) TL2008-58 |
Analogia was originally proposed by Aristotle. The analogia is not speculation based on similarity but discovery of the ... [more] | TL2008-58 pp.45-49 |
| SDM, ED | 2008-07-11 15:20 |
Hokkaido | Kaderu２・７ | Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) ED2008-107 SDM2008-126 |
Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer,... [more] | ED2008-107 SDM2008-126 pp.351-355 |
| CPM, ED, SDM | 2008-05-16 09:50 |
Aichi | Nagoya Institute of Technology | Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] | ED2008-11 CPM2008-19 SDM2008-31 pp.51-56 |
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