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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 14:45 |
Miyagi | [Invited Talk]
Monolithic integrated 300GHz band rectennas with GaAsSb/InGaAs backward diodes Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu)  ED2022-74 MWPTHz2022-45 |
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] | ED2022-74 MWPTHz2022-45 pp.15-18 |
|
| HIP | 2021-12-23 14:00 |
Online | Online | Changes in the impression of urgency-inducing speech due to added background image and background sounds Kohei Ogawa, Masahiro Yamataka (Aichi Univ of Technology.), Shuichi Sakamoto, Yoiti Suzuki, Toshiaki Muramoto (Tohoku Univ.) HIP2021-50 |
It is reported that emergency-related damage has been increased because residents who were in danger frequently made ove... [more] | HIP2021-50 pp.11-16 |
| SCE | 2020-09-02 15:30 |
Online | Online | Performance of Digital SQUID magnetometer using Multi-Flux Quantum Feedback Itta Oshima, Sohei Uchida, Masato Naruse, Tohru Taino, Hiroaki Myoren (Saitama Univ.) SCE2020-6 |
We designed a digital SQUID with sub-Φ0feedback with the multi-flux generators (MFGs) for SFQ feedback operation. We suc... [more] | SCE2020-6 pp.27-30 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| HIP | 2019-12-20 09:00 |
Miyagi | RIEC, Tohoku University | Changes in the impression of urgency-inducing speech due to disaster education video Masahiro Yamataka (AUT), Takeshi Shibutani, Shuichi Sakamoto, Yoichi Suzuki, Toshiaki Muramoto (Tohoku Univ.) HIP2019-72 |
A function of the human mind called "normalcy bias" is known as a factor to prevent residents from evacuating when, e.g.... [more] | HIP2019-72 pp.41-46 |
| MWP (2nd) |
2018-08-06 | Shimane | Shimane Prefectural Convention Center (Matsue City) | Automatic bias control for Mach-Zehnder modulator by Raspberry Pi Honda Ryota (AGU), Atushi Kanno, Naokatsu Yamamoto (NICT), Hideyuki Sotobayashi (AGU) |
We propose an automatic bias control scheme for lithium-niobate-based Mach-Zehnder optical modulator by Raspberry Pi. [more] | |
| ICD, CPSY, CAS | 2017-12-14 15:10 |
Okinawa | Art Hotel Ishigakijima | Reduction of Area of a Low-Power Noise Cancelling LNA with Shunt Feedback Utilizing the Gate Grounded MOSFET Naoki Shimokawa, Kazuyuki Wada (Meiji Univ.) CAS2017-79 ICD2017-67 CPSY2017-76 |
A common gate-common source (CG-CS) low noise amplifier (LNA), which has an internal feedback using a coupling capacitor... [more] | CAS2017-79 ICD2017-67 CPSY2017-76 pp.79-84 |
| MW, ED | 2017-01-27 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] | ED2016-102 MW2016-178 pp.29-33 |
| ICD, CPSY | 2016-12-16 16:10 |
Tokyo | Tokyo Institute of Technology | Analysis of Wide-Range-Temperature Compensation Using Isothermal-Point and Back-Gate-Bias-Control for ISFET-Array Makoto Ogi, Zule Xu, Takayuki Kawahara (TUS) ICD2016-99 CPSY2016-105 |
pH sensors using ion-sensitive field effect transistors (ISFETs) are sensitive to temperature variation, which limits th... [more] | ICD2016-99 CPSY2016-105 pp.155-160 |
| SDM | 2016-10-26 15:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] | SDM2016-71 pp.15-20 |
| SDM | 2016-10-26 16:10 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] | SDM2016-72 pp.21-25 |
| EA | 2015-12-11 15:15 |
Ishikawa | Kanazawa Univ., Satellite Plaza | [Poster Presentation]
Monaural horizontal sound localization Daiki Kojima, Tatsuya Hirahara (Toyama Pref. Univ.) EA2015-46 |
This paper describes monaural horizontal sound localization experiments using newly-improved experimental system. In the... [more] | EA2015-46 pp.31-36 |
| MW (2nd) |
2014-11-26 - 2014-11-28 |
Overseas | King Mongkut's Institute of Technology Ladkrabang (KMITL), Bangkok | A PVT-Robust VCO with Tail-Current Modulation Scheme Aravind Tharayil Narayanan, Wei Deng, Kenichi Okada, Akira Matsuzawa (Tokodai) |
This paper proposes a VCO topology in which the tail-current is adaptively modulated for enhancing the current efficienc... [more] | |
| SDM | 2014-10-17 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] | SDM2014-94 pp.61-68 |
| ED | 2014-08-01 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53 |
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] | ED2014-53 pp.1-6 |
| ICD | 2014-04-18 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Tomoko Mizutani, Toshiro Hiramoto (UTokyo) ICD2014-11 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] | ICD2014-11 pp.53-57 |
| SDM | 2014-01-29 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) SDM2013-143 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] | SDM2013-143 pp.35-38 |
| RECONF | 2013-09-19 09:00 |
Ishikawa | Japan Advanced Institute of Science and Technology | A Low power Reconfigurable Accelerator using a Back-gate Bias Control Technique Hongliang Su, Weihan Wang, Hideharu Amano (Keio Univ.) RECONF2013-26 |
Leakage power is a serious problem especially for accerelators which use a large size Processing Ele- ment (PE) array. H... [more] | RECONF2013-26 pp.37-42 |
| IN, IA (Joint) |
2012-12-14 15:20 |
Hiroshima | Hiroshima City Univ. | The bias of bit distribution issue in plain text archiving Ahmed Tallat, Hiroshi Yasuda, Kilho Shin (Tokyo Denki Univ.) IN2012-135 |
this paper proposes a distributed plain text archive scheme. The most interesting feature of it is that the bias of bits... [more] | IN2012-135 pp.79-84 |
| ICD, SDM | 2012-08-02 13:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | [Invited Lecture]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36 |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] | SDM2012-68 ICD2012-36 pp.29-32 |
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